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| 2009 | Integrated active near-field sensor in GaAs technology
Uddin, N.; Spang, M.; Mager, T.; Thiede, A. | Conference Paper |
| 2009 | Integrated active sensors for near-field scanning
Uddin, N.; Spang, M.; Mager, T.; Thiede, A. | Conference Paper |
| 2005 | A novel approach for RF/microwave modeling and optimization of BGA packages
Ndip, I.; John, W.; Reichl, H.; Thiede, A. | Conference Paper |
| 2000 | Complementary HFETs on GaAs with 0.2µm gate length
Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G. | Conference Paper |
| 1999 | 40 Gbit/s high voltage modulator driver in P-HEMT technology
Leich, M.; Ludwig, M.; Hülsmann, A.; Hurm, V.; Steinhagen, F.; Thiede, A.; Schlechtweg, M. | Journal Article |
| 1999 | 40 Gbit/s/GHz clock recovery and frequency multiplying AlGaAs/GaAs-HEMT-IC using injection-synchronised narrowband ring-VCOs and auxiliary PLLs
Wang, Z.-G.; Thiede, A.; Schlechtweg, M.; Lienhart, H.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T. | Journal Article |
| 1999 | Isi mitigation using decision-feedback loop demonstrated with PMD distorted 10Gbit/s signals
Moller, L.; Thiede, A.; Chandrasekhar, S.; Benz, W.; Lang, M.; Jakobus, T.; Schlechtweg, M. | Journal Article |
| 1999 | Spannungsgesteuerter Ring-Oszillator
Wang, Z.; Thiede, A. | Patent |
| 1999 | Vorrichtung und Verfahren zur Takt- und Traegerrueckgewinnung
Wang, Z.; Thiede, A. | Patent |
| 1999 | Vorrichtung zur Gewinnung eines Takt- oder Traegersignales
Wang, Z.; Thiede, A.; Schlechtweg, M. | Patent |
| 1998 | 20-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Journal Article |
| 1998 | 40 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T. | Journal Article |
| 1998 | 40 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Conference Paper |
| 1998 | 40 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A. | Journal Article |
| 1998 | 5 Gsample/s track-hold and 3 Gsample/s quasi-sample-hold ICs
Lao, Z.; Thiede, A.; Lienhart, H.; Schlechtweg, M.; Bronner, W.; Hornung, J.; Hülsmann, A.; Jakobus, T. | Conference Paper |
| 1998 | 55 GHz dynamic frequency divider IC
Lao, Z.; Thiede, A.; Hornung, J.; Schlechtweg, M.; Lienhart, H.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Seibel, J.; Sedler, M.; Kaufel, G. | Journal Article |
| 1998 | A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Lang, M.; Wang, Z.-G.; Thiede, A.; Lienhart, H.; Jakobus, T.; Bronner, W.; Hornung, J.; Hülsmann, A. | Conference Paper |
| 1998 | Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology
Bushehri, E.; Thiede, A.; Staroselsky, V.; Timochenkov, V.; Lienhart, H.; Bratov, V.; Jakobus, T. | Journal Article |
| 1998 | LSI capability demonstration of an 0.15 mu m - 0.3 mu m GaAs HEMT and PM-HEMT 3 level metallization E/D-Technology for mixed signal circuits
Thiede, A.; Lao, Z.; Lienhart, H.; Sedler, M.; Seibel, J.; Hornung, J.; Schneider, J.; Kaufel, G.; Bronner, W.; Köhler, K.; Jakobus, T.; Schlechtweg, M. | Conference Paper |
| 1998 | Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M. | Journal Article |
| 1998 | Modulator driver and photoreceiver for 20 Gb/s optic-fiber links
Lao, Z.; Hurm, V.; Thiede, A.; Berroth, M.; Ludwig, M.; Lienhart, H.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Kaufel, G.; Jakobus, T. | Journal Article |
| 1998 | Schwingkreis
Wang, Z.-G.; Thiede, A. | Patent |
| 1997 | 10 Gb/s single-chip data regeneration with an injection
Wang, Z.-G.; Thiede, A.; Rieger-Motzer, M.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T.; Schlechtweg, M. | Conference Paper |
| 1997 | 20-40 Gb/s 0.2-mu m GaAs HEMT chip set for optical data receiver
Lang, M.; Wang, Z.-G.; Lao, Z.; Schlechtweg, M.; Thiede, A.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Raynor, B. | Journal Article |
| 1997 | 25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Thiede, A.; Bosch, R.; Hofmann, P.; Hülsmann, A.; Moglestue, C.; Köhler, K. | Conference Paper |
| 1997 | 35-GHz static and 48-GHz dynamic frequency divider IC's using 0.2-mu m AlGaAs/GaAs-HEMT's
Lao, Z.; Bronner, W.; Thiede, A.; Schlechtweg, M.; Hülsmann, A.; Rieger-Motzer, M.; Kaufel, G.; Raynor, B.; Sedler, M. | Journal Article |
| 1997 | 40 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B. | Journal Article |
| 1997 | 45 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
Lao, Z.; Nowotny, U.; Thiede, A.; Hurm, V.; Kaufel, G.; Rieger-Motzer, M.; Bronner, W.; Seibel, J.; Hülsmann, A. | Journal Article |
| 1997 | DC 30 GHz bandwidth and 36 dB gain limiting amplifier for 40 Gbit/s optical transmission systems
Lao, Z.; Bosch, R.; Hurm, V.; Thiede, A.; Schlechtweg, M.; Bronner, W.; Hornung, J.; Hülsmann, A.; Jakobus, T. | Journal Article |
| 1997 | GaAs HEMT ICs for 40 Gbit/s data transmission systems
Lang, M.; Nowotny, U.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1997 | HEMT circuits for signal/data processing
Berroth, M.; Hurm, V.; Lang, M.; Lao, Z.; Thiede, A.; Wang, Z.-G.; Bangert, A.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Jakobus, T. | Journal Article |
| 1997 | High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
Lao, Z.; Thiede, A.; Nowotny, U.; Schlechtweg, M.; Hurm, V.; Bronner, W.; Hornung, J.; Rieger-Motzer, M.; Kaufel, G.; Köhler, K.; Hülsmann, A. | Conference Paper |
| 1997 | Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S. | Conference Paper |
| 1997 | Low-power 20 Gbit/s data decision and 17 GHz static frequency divider ICs with 1.5 V supply voltage
Lao, Z.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Kaufel, G.; Seibel, J.; Bronner, W.; Hülsmann, A.; Schneider, J.; Raynor, B. | Journal Article |
| 1997 | Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M. | Conference Paper |
| 1997 | Multifunctional integration using HEMT technology
Schlechtweg, M.; Verweyen, L.; Haydl, W.; Thiede, A.; Lang, M.; Leber, P.; Hurm, V.; Jakobus, T.; Bronner, W.; Hülsmann, A.; Hornung, J.; Wang, Z. | Conference Paper |
| 1997 | Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Bushehri, E.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Hornung, J.; Kaufel, G.; Raynor, B.; Schneider, J. | Journal Article |
| 1996 | 10 and 20 Gbit/s clock recovery GaAs IC with 288 deg phase-shifting function
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J. | Journal Article |
| 1996 | 20-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
Berroth, M.; Lang, M.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Schneider, J. | Conference Paper |
| 1996 | 31 GHz static and 39 GHz dynamic frequency divider ICs using 0,2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Rieger-Motzer, M.; Thiede, A.; Hurm, V.; Sedler, M.; Bronner, W.; Hülsmann, A.; Raynor, B. | Conference Paper |
| 1996 | 40 and 20 Gbit/s monolithic integrated clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J. | Journal Article |
| 1996 | Circuit techniques for 10 and 20 Gb/s clock recovery using a fully balanced narrowband regenerative frequency divider with 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.; Briggmann, D. | Conference Paper |
| 1996 | Low power data decision IC for 20-40 Gbit/s data links using 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J. | Journal Article |
| 1996 | A monolithic 24.9 GHz limiting amplifier using 0.2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Rieger-Motzer, M.; Thiede, A.; Bronner, W.; Hülsmann, A.; Raynor, B. | Conference Paper |
| 1995 | Single-chip 4 bit 35 GHz phase-shifting receiver with a Gb/s digital interface circuitry
Wang, Z.-G.; Berroth, M.; Thiede, A.; Schlechtweg, M.; Sedler, M.; Seibel, J.; Rieger-Motzer, M.; Raynor, B.; Bronner, W.; Fink, T.; Huder, B.; Rittmayer, R.; Schroth, J. | Conference Paper |
| 1994 | 0.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T. | Journal Article |
| 1994 | Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T. | Conference Paper |
| 1993 | An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1993 | An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J. | Conference Paper |
| 1993 | 28-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U. | Journal Article |
| 1993 | Digital dynamic frequency dividers for broad band application up to 60 GHz.
Thiede, A.; Berroth, M.; Tasker, P.J.; Schlechtweg, M.; Seibel, J.; Raynor, B.; Hülsmann, A.; Köhler, K.; Bronner, W. | Conference Paper |
| 1992 | 16 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J. | Journal Article |