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| 2011 | Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
Hossain, N.; Sweeney, S.J.; Rogowsky, S.; Ostendorf, R.; Wagner, J.; Liebich, S.; Zimprich, M.; Volz, K.; Kunert, B.; Stolz, W. | Journal Article |
| 2011 | Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B. | Journal Article |
| 2010 | MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor
Roesener, T.; Döscher, H.; Beyer, A.; Brückner, S.; Klinger, V.; Wekkeli, A.; Kleinschmidt, P.; Jurecka, C.; Ohlmann, J.; Volz, K.; Stolz, W.; Hannappel, T.; Bett, A.W.; Dimroth, F. | Conference Paper |
| 2010 | Optical investigation of the BGaP/GaP/Si material system
Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W. | Conference Paper |
| 2009 | Development and optimization of a 1 eV (GaIn)(NAs) solar cell
Volz, K.; Szesney, A.; Jurecka, C.; Nemeth, I.; Rubel, O.; Stolz, W.; Welser, E.; Oliva, E.; Dimroth, F.; Bett, A.W. | Conference Paper |
| 2009 | Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
Jandieri, K.; Baranovskii, S.D.; Stolz, W.; Gebhard, F.; Guter, W.; Hermle, M.; Bett, A.W. | Journal Article |
| 2008 | Doping electrical properties and solar cell application of GaInNAs
Volz, K.; Stolz, W.; Teubert, J.; Klar, P.J.; Heimbrodt, W.; Dimroth, F.; Baur, C.; Bett, A.W. | Book Article |
| 2008 | Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
Volz, K.; Lackner, D.; Nemeth, I.; Kunert, B.; Stolz, W.; Baur, C.; Dimroth, F.; Bett, A.W. | Journal Article |
| 2008 | Resonant electron tunneling through defects in GaAs tunnel diodes
Jandieri, K.; Baranovskii, S.D.; Rubel, O.; Stolz, W.; Gebhard, F.; Guter, W.; Hermle, M.; Bett, A.W. | Journal Article |
| 2008 | Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
Jandieri, K.; Baranovskii, S.D.; Rubel, O.; Stolz, W.; Gebhard, F.; Guter, W.; Hermle, M.; Bett, A.W. | Journal Article |
| 2007 | Material development for improved 1 eV (Galn)(NAs) solar cell structures
Volz, K.; Torunski, T.; Lackner, D.; Rubel, O.; Stolz, W.; Baur, C.; Müller, S.; Dimroth, F.; Bett, A.W. | Journal Article |
| 2006 | Improving the material quality of MOVPE grown (GaIn) (NAs)
Volz, K.; Lackner, D.; Rubel, O.; Stolz, W.; Baur, C.; Dimroth, F.; Müller, S.; Bett, A. | Conference Paper |
| 2005 | FULLSPECTRUM: A new PV wave making more efficient use of the solar spectrum
Marti, A.; Bett, A.; Andreev, V.M.; Jaussaud, C.; Roosmalen, J.A.M. van; Alonso, J.; Räuber, A.; Strobl, G.; Stolz, W.; Algora, C.; Bitnar, B.; Gombert, A.; Stanley, C.; Wahnon, P.; Conesa, J.; Sark, W.G.J.H.M. van; Meijerink, A.; Klink, G. van; Barnham, K.; Danz, R.; Meyer, T.; Luque-Heredia, I.; Kenny, R.; Christodes, C.; Sala, G.; Benítez, P. | Conference Paper, Journal Article |
| 2004 | Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applications
Dimroth, F.; Baur, C.; Bett, A.W.; Volz, K.; Stolz, W. | Journal Article |
| 2003 | Development of a 1.0 eV (GaIn)(NAs) solar cell
Baur, C.; Bett, A.W.; Dimroth, F.; Riesen, S. van; Kunert, B.; Traversa, M.; Volz, K.; Stolz, W. | Conference Paper |
| 2001 | High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs and low temperatures and low V/III-ratios
Agert, C.; Dimroth, F.; Schubert, U.; Bett, A.W.; Leu, S.; Stolz, W. | Journal Article |
| 2000 | Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor
Agert, C.; Lanyi, P.; Sulima, O.V.; Stolz, W.; Bett, A.W. | Journal Article |
| 2000 | Quantitative topographic assessment of Cu incorporation in GaAs
Baeumler, M.; Stibal, R.; Stolz, W.; Steinegger, T.; Jurisch, M.; Maier, M.; Jantz, W. | Journal Article |
| 2000 | Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices
Giannini, C.; Baumbach, T.; Lübbert, D.; Felici, R.; Tapfer, L.; Marschner, T.; Stolz, W.; Jin-Phillipp, N.Y.; Phillipp, F. | Journal Article |
| 1999 | Investigation of Strain Induced Patterning in Superlattices by Grazing incidence Diffraction - Comparison of Morphological and Strain Ordering
Baumbach, G.; Giannini, C.; Lübbert, D.; Felici, R.; Tapfer, L.; Marschner, T.; Stolz, W. | Journal Article |
| 1998 | Strain-induced patterning in superlattices. Comparison of morphological ordering and strain ordering
Baumbach, T.; Giannini, C.; Lübbert, D.; Felici, R.; Tapfer, L.; Marschner, T.; Stolz, W. | Book Article |
| 1990 | Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J. | Conference Paper |
| 1989 | Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J. | Journal Article |
| 1987 | Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
Stolz, W.; Ploog, K.; Wagner, J. | Journal Article |
| 1986 | Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Stolz, W.; Knecht, J.; Ploog, K.; Wagner, J. | Journal Article |
| 1986 | Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
Miguel, J.L. de; Ohmori, Y.; Stolz, W.; Tapfer, L.; Ploog, K.; Wagner, J. | Conference Paper |
| 1985 | Free-exciton luminescence in GaSb quantum wells confined by short-period AISb-GaSb superlattices
Ploog, K.; Ohmori, Y.; Okamoto, H.; Stolz, W.; Wagner, J. | Journal Article |
| 1985 | Luminescence excitation spectroscopy on Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As quantum-well heterostructures
Stolz, W.; Ploog, K.; Wagner, J. | Journal Article |