Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Conference Paper, Journal Article
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Conference Paper
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Journal Article
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Conference Paper
2003SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier, M.; Serries, D.; Geppert, T.; Köhler, K.; Güllich, H.; Herres, N.
Journal Article
2002(GaIn)(ASP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern
Serries, D.
Dissertation
2002High in content GaInAsN on InP: Composition dependent band gap energy and luminescence properties
Serries, D.; Geppert, T.; Ganser, P.; Köhler, K.; Wagner, J.
Conference Paper
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Journal Article
2001Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.
Journal Article
20002 µm room-temperature diode lasers for Co(2)-detection
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.; Beyer, T.; Lambrecht, A.
Conference Paper
2000Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M.; Serries, D.; Herres, N.; Fuchs, F.; Kiefer, R.; Winkler, K.; Bachem, K.-H.; Wagner, J.
Conference Paper
2000Raman and dielectric function spectra of strained GaAs(1-x)Sb(x) layers on InP
Serries, D.; Peter, M.; Herres, N.; Winkler, K.; Wagner, J.
Journal Article
1999Effect of aging on stress in silicon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition technique
Sah, R.E.; Baumann, H.; Serries, D.; Kiefer, R.; Braunstein, J.
Conference Paper
1998InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation
Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Serries, D.; Grietens, B.; Nemeth, S.; Hoof, C. van; Borghs, G.
Journal Article
1998Optische Untersuchungen von antimonidischen III/V-Verbindungshalbleitern
Serries, D.
Thesis