Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Small signal modelling approach for submillimeter wave III-V HEMTs with analysation and optimization possibilities
Ohlrogge, M.; Tessmann, A.; Leuther, A.; Weber, R.; Massler, H.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
Moschetti, G.; Thome, F.; Ohlrogge, M.; Goliasch, J.; Schäfer, F.; Aja, B.; Leuther, A.; Schlechtweg, M.; Seelmann-Eggebert, M.; Ambacher, O.; Wieching, G.; Kotiranta, M.
Journal Article
2016Verfahren zum Charakterisieren von Mikrowellenbauelementen
Seelmann-Eggebert, Matthias
Patent
2015Active cold load MMICs for Ka-, V-, and W-bands
Kantanen, M.; Weissbrodt, E.; Varis, J.; Leuther, A.; Seelmann-Eggebert, M.; Rösch, M.; Schlechtweg, M.; Poutanen, T.; Sundberg, I.; Kaisti, M.; Altti, M.; Jukkala, P.; Piironen, P.
Journal Article
2015Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
Raay, F. van; Quay, R.; Aja, B.; Moschetti, G.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015On the accurate measurement and calibration of s-parameters for millimeter wavelengths and beyond
Seelmann-Eggebert, M.; Ohlrogge, M.; Weber, R.; Peschel, D.; Massler, H.; Riessle, M.; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Journal Article
2015On the determination of noise parameters of low-noise transistor devices
Seelmann-Eggebert, M.; Aja, B.; Baldischweiler, B.; Moschetti, G.; Massler, H.; Bruch, D.; Schlechtweg, M.; Ambacher, O.
Journal Article
201420 nm metamorphic HEMT technology for terahertz monolithic integrated circuits
Leuther, A.; Tessmann, A.; Doria, P.; Ohlrogge, M.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014A compact in-situ cryogenic noise measurement system for characterization of low noise amplifiers
Bruch, D.
: Kallfass, I.; Seelmann-Eggebert, M. (Betreuer)
Dissertation
2014Cryogenic low noise amplifier development for 67-116 GHz
Kotiranta, M.; Bruch, D.; Leuther, A.; Massler, H.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.; Türk, S.; Goliasch, J.; Schäfer, F.
Conference Paper
2014MHEMT G-band low-noise amplifiers
Kärkkäinen, M.; Kantanen, M.; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Alanne, A.; Jukkala, P.; Närhi, T.; Halonen, K.A.I.
Journal Article
2014Q- and E-band amplifier MMICs for satellite communication
Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.
Conference Paper
2014A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications
Ohlrogge, M.; Seelmann-Eggebert, M.; Leuther, A.; Massler, H.; Tessmann, A.; Weber, R.; Schwantuschke, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Untersuchung der Eigenrauschmechanismen metamorpher Feldeffekttransistoren mit hoher Elektronenbeweglichkeit (HEMT) zwischen 5GHz und 25GHz bei 15K
Jacob, K.
: Wagner, J. (Betreuer); Seelmann-Eggebert, M. (Betreuer)
Master Thesis
2013Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
Baldischweiler, B.; Bruch, D.; Kallfass, I.; Seelmann-Eggebert, M.; Leuther, A.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2013Compact 110-170 GHz amplifier in 50 nm mHEMT technology with 25 dB gain
Merkle, T.; Koch, S.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kallfass, I.
Conference Paper
2013Figures of uncertainty for noise measurements
Seelmann-Eggebert, M.; Baldischweiler, B.; Aja, B.; Bruch, D.; Massler, H.
Conference Paper
2013A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
Schwantuschke, D.; Seelmann-Eggebert, M.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Conference Paper
2013A G-band cascode MHEMT medium power amplifier
Campos-Roca, Y.; Tessmann, A.; Hurm, V.; Massler, H.; Seelmann-Eggebert, M.; Leuther, A.
Conference Paper
2013Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Maier, T.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2013MHEMT G-band low-noise amplifiers
Kärkkäinen, M.; Kantanen, M.; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.A.I.
Conference Paper
2013New low-frequency dispersion model for AlGaN/GaN HEMTs using integral transform and state description
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Journal Article
2013Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
Tessmann, A.; Schlechtweg, M.; Bruch, D.; Lewark, U.J.; Leuther, A.; Massler, H.; Wagner, S.; Seelmann-Eggebert, M.; Hurm, V.; Aidam, R.; Kallfass, I.; Ambacher, O.
Conference Paper
2013Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
Schmid, U.; Sledzik, H.; Schuh, P.; Schroth, J.; Oppermann, M.; Brueckner, P.; Raay, F. van; Quay, R.; Seelmann-Eggebert, M.
Journal Article
20124-12 GHz and 25-34 GHz cryogenic MHEMT MMIC Low Noise Amplifiers for radio astronomy
Aja, B.; Seelmann-Eggebert, M.; Leuther, A.; Massler, H.; Schlechtweg, M.; Gallego, J.D.; Lopez-Fernandez, I.; Diez, C.; Malo, I.; Villa, E.; Artal, E.
Conference Paper
20124-12- and 25-34-GHz cryogenic mHEMT MMIC low-noise amplifiers
Aja, B.; Seelmann-Eggebert, M.; Bruch, D.; Leuther, A.; Massler, H.; Baldischweiler, B.; Schlechtweg, M.; Gallego, J.D.; Lopéz-Fernandez, I.; Diez-González, C.; Malo-Gómez, I.; Villa, E.; Artal, E.
Journal Article
2012Anrodnung zum Kalibrieren einer Messeinrichtung
Seelmann-Eggebert, M.; Weber, R.
Patent
2012Broadband MMIC tuners dedicated to noise parameter measurements at cryogenic temperatures
Bruch, D.; Seelmann-Eggebert, M.; Kallfass, I.; Leuther, A.; Diebold, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2012A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology
Tessmann, A.; Leuther, A.; Massler, H.; Seelmann-Eggebert, M.
Conference Paper
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Journal Article
2012Modelling of transistor feeding structures based on electro-magnetic field simulations
Diebold, S.; Seelmann-Eggebert, M.; Gulan, H.; Leuther, A.; Zwick, T.; Kallfass, I.
Conference Paper
2012A noise source module for In-Situ noise figure measurements from DC to 50 GHz at cryogenic temperatures
Bruch, Daniel; Amils, R.I.; Gallego, J.D.; Seelmann-Eggebert, M.; Aja, B.; Schäfer, F.; Diez, C.; Leuther, A.; Schlechtweg, M.; Ambacher, O.; Kallfass, I.
Journal Article
2011A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R.
Conference Paper
2011Cryogenic low-noise mHEMT-based MMIC amplifiers for 4-12 GHz band
Aja, B.; Schuster, K.; Schäfer, F.; Gallego, J.D.; Chartier, S.; Seelmann-Eggebert, M.; Kallfass, I.; Leuther, A.; Massler, H.; Schlechtweg, M.; Diez, C.; Lopez-Fernandez, I.; Lenz, S.; Türk, S.
Journal Article
2011Design and model studies for solid-state power amplification at 210 GHz
Diebold, S.; Kallfass, I.; Massler, H.; Seelmann-Eggebert, M.; Leuther, A.; Tessmann, A.; Pahl, P.; Koch, S.; Ambacher, O.
Journal Article
2011Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
Journal Article
2011Erratum: X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface (Journal of Applied Physics (2010) 108 (093702))
Zhang, Y.; Gajjala, G.; Hofmann, T.; Weinhardt, L.; Bär, M.; Heske, C.; Seelmann-Eggebert, M.; Meisen, P.
Journal Article
2011A fully-scalable coplanar waveguide passive library for millimeter-wave monolithic integrated circuit design
Diebold, S.; Weber, R.; Seelmann-Eggebert, M.; Massler, H.; Tessmann, A.; Leuther, A.; Kallfass, I.
Conference Paper
2011Low noise amplifiers for G-band radiometers
Kantanen, M.; Kärkkäinen, M.; Caujolle-Bert, S.; Varonen, M.; Weber, R.; Seelmann-Eggebert, M.; Leuther, A.; Jukkala, P.; Närhi, T.; Halonen, K.A.
Conference Paper
2011Metamorphic HEMT MMICs and modules operating between 300 and 500 GHz
Tessmann, A.; Leuther, A.; Hurm, V.; Kallfass, I.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Lösch, R.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Journal Article
2011Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
Conference Paper
2011A single chip broadband noise source for noise measurements at cryogenic temperatures
Bruch, D.; Schäfer, F.; Seelmann-Eggebert, M.; Aja, B.; Kallfass, I.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2010AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications
Do, M.-N.; Seelmann-Eggebert, M.; Quay, R.; Langrez, D.; Cazaux, J.-L.
Conference Paper
2010Broadband MMIC amplifier for superconducting single photon detector readout in a cryogenic environment
Bruch, D.; Kallfass, I.; Aja Abelan, B.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Crocoll, E.; Wünsch, S.; Siegel, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2010Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.
Journal Article
2010Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Journal Article
2010GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R.
Conference Paper
2010GaN-based amplifiers for wideband applications
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R.
Journal Article
2010A metamorphic HEMT S-MMIC amplifier with 16.1 dB gain at 460 GHz
Tessmann, A.; Leuther, A.; Lösch, R.; Seelmann-Eggebert, M.; Massler, H.
Conference Paper
2010A versatile and cryogenic mHEMT-model including noise
Seelmann-Eggebert, M.; Schäfer, F.; Leuther, A.; Massler, H.
Conference Paper
2010X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface
Zhang, Y.; Gajjala, G.; Hofmann, T.; Weinhardt, L.; Bär, M.; Heske, C.; Seelmann-Eggebert, M.; Meisen, P.
Journal Article
2009Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Conference Paper
2009Design of X-band GaN MMICs using field plates
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Conference Paper
2009GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Journal Article
2009High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Conference Paper
2009The metamorphic HEMT and its applications in remote sensing
Kallfass, I.; Tessmann, A.; Leuther, A.; Seelmann-Eggebert, M.; Aja Abelan, B.; Gallego Puyol, J.D.; Wadefalk, N.; Schäfer, F.; Schuster, K.F.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2009Metamorphic HEMT technology for low-noise applications
Leuther, A.; Tessmann, A.; Kallfass, I.; Lösch, R.; Seelmann-Eggebert, M.; Wadefalk, N.; Schäfer, F.; Gallego Puyol, J.D.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2009MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
Journal Article
2009A novel tuning concept for wideband VCOs based on a shunt-FET
Weber, R.; Kallfass, I.; Seelmann-Eggebert, M.; Leuther, A.
Conference Paper
2009Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications
Suijker, E.M.; Rodenburg, M.; Hoogland, J.A.; Heijningen, M. van; Seelmann-Eggebert, M.; Quay, R.; Brueckner, P.; Vliet, F.E. van
Conference Paper
2009X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Journal Article
2008Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M.
Conference Paper
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Conference Paper
2008Low noise amplifiers for D-band
Kantanen, M.; Kärkkäinen, M.; Varonen, M.; Laaninen, M.; Karttaavi, T.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Lahtinen, J.; Halonen, K.
Journal Article
2008Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz
Kallfass, I.; Diebold, S.; Massler, H.; Koch, S.; Seelmann-Eggebert, M.; Leuther, A.
Conference Paper
2008Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz
Kallfass, I.; Diebold, S.; Massler, H.; Koch, S.; Seelmann-Eggebert, M.; Leuther, A.
Conference Paper
2007A PLL-stabilized W-band MHEMT push-push VCO with integrated frequency divider circuit
Weber, R.; Kuri, M.; Lang, M.; Tessmann, A.; Seelmann-Eggebert, M.; Leuther, A.
Conference Paper
2007A systematic state-space approach to large-signal transistor modeling
Seelmann-Eggebert, M.; Merkle, T.; Raay, F. van; Quay, R.; Schlechtweg, M.
Journal Article
2006Coplanar 155 GHz MHEMT MMIC low noise amplifiers
Kantanen, M.; Kärkkäinen, M.; Varonen, M.; Karttaavi, R.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.
Conference Paper
2006Coplanar 94 GHz metamorphic HEMT low noise amplifiers
Kärkkäinen, M.; Varonen, M.; Kantanen, M.; Karttaavi, R.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Nähri, T.; Halonen, K.
Conference Paper
2006Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.
Conference Paper
2006Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2006G-Band metamorphic HEMT-based frequency multipliers
Campos-Roca, Y.; Schwörer, C.; Leuther, A.; Seelmann-Eggebert, M.
Journal Article
2006Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W.
Conference Paper
2006Two-stage GaN based multiband power amplifier for software defined radio applications
Naß, T.; Wiegner, D.; Seyfried, U.; Templ, W.; Weber, S.; Wörner, S.; Klose, P.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Kappeler, O.; Kiefer, R.
Conference Paper
2006X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs
Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper
2005A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
Schwörer, C.; Campos-Roca, Y.; Leuther, A.; Tessmann, A.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology
Campos-Roca, Y.; Schwörer, C.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.
Journal Article
2005High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Walcher, H.; Kappeler, O.; Seelmann-Eggebert, M.; Muller, S.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.
Conference Paper
2005Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2004Kompositstruktur fuer elektronische Mikrosysteme sowie Verfahren zur Herstellung der Kompositstruktur
Guettler, H.; Koidl, P.; Seelmann-Eggebert, M.
Patent
2001Heat-spreading diamond films for GaN-based high-power transistor devices
Seelmann-Eggebert, M.; Meisen, P.; Schaudel, F.; Kiodl, P.; Vescan, A.; Leier, H.
Journal Article
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1996Interface formation between deposited Sn and Hg(0,8)Cd(0,2)Te
Zimmermann, H.; Keller, R.C.; Meisen, P.; Richter, H.J.; Seelmann-Eggebert, M.
Journal Article
1995Addition of N2 as a polymer deposition inhibitor in CH4/H2 electrocyclotron resonance plasma etching of Hg1-xCdxTe
Keller, R.C.; Seelmann-Eggebert, M.; Richter, H.J.
Journal Article
1993A case study for XPD in the presence of a compositional depth profile - interface formation between metals -Ag, Al- and HgCdTe.
Seelmann-Eggebert, M.; Carey, G.P.; Klauser, R.; Richter, H.J.
Journal Article
1993Monolayer-resolved x-ray-excited Auger-electron diffraction from single-plane emission in GaAs
Seelmann-Eggebert, M.; Fasel, U.; Larkins, E.C.; Osterwalder, J.
Journal Article
1992Effect of cleanings on the composition of HgCdTe surfaces.
Seelmann-Eggebert, M.; Carey, G.; Krishnamurthy, V.; Helms, C.R.
Journal Article
1992Photoemission spectroscopic techniques to assess physical and chemical properties of mercury cadmium telluride.
Seelmann-Eggebert, M.
Journal Article
1991Characterization of Cd(1-y)Zn(y)Te(111) and Hg(1-x)Cd(x)Te(111) real surfaces by x-ray photoelectron diffraction
Richter, H.J.; Seelmann-Eggebert, M.
Journal Article
1991Structural characterization of the -111- surfaces of CdZnTe and HgCdTe epilayers by x-ray photoelectron diffraction.
Richter, H.J.; Seelmann-Eggebert, M.
Journal Article
1990Theoretical aspects for depth profiling by ARXPS.
Richter, H.J.; Seelmann-Eggebert, M.
Journal Article
1989Angle-resolved x-ray photoelectron spectroscopy as a noninvasive characterization technique for the surface region of processed -Hg, Cd-Te
Richter, H.J.; Seelmann-Eggebert, M.
Conference Paper
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Journal Article
1988Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy.
Herres, N.; Richter, H.J.; Seelmann-Eggebert, M.; Smith, R.; Wennekers, P.
Journal Article
1988Depth-compositional analyses -angle-resolved x-ray photoelectron spectroscopy- of degradations on etched mercury cadmium telluride.
Seelmann-Eggebert, M.; Richter, H.J.
Journal Article
1987Interfacial structure of anodically oxidized Hg(1-x) Cd(x) Te
Richter, H.J.; Seelmann-Eggebert, M.
Conference Paper
1986Anodische Eigenoxide und elektrochemische Reaktionen von Hg1-xCdxTe
Seelmann-Eggebert, M.
Dissertation
1984Comments on the composition of anodic films on Hg0.8Cd0.2Te.
Brandt, G.; Richter, H.J.; Seelmann-Eggebert, M.
Journal Article