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| 1991 | Infrared analysis of hydrogen in GaP.
Dischler, B.; Fuchs, F.; Seelewind, H. | Journal Article |
| 1990 | Dopant incorporation in Si-implanted and thermally annealed GaAs.
Jantz, W.; Seelewind, H.; Wagner, J. | Journal Article |
| 1990 | Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H. | Journal Article |
| 1989 | Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy.
Schneider, J.; Mooney, P.M.; Lagowski, J.; Matsui, M.; Beard, D.R.; Newman, R.C.; Dischler, B.; Seelewind, H. | Journal Article |
| 1989 | Infrared fourier transform spectroscopy on local vibrational modes in GaAs
Löhnert, K.; Dischler, B.; Jantz, W.; Seelewind, H. | Conference Paper |
| 1988 | Arsenic ion implantation in Hg1-XCdXTe.
Baars, J.; Seelewind, H.; Kaiser, U.; Ziegler, J.; Fritzsche, C. | Journal Article |
| 1988 | Characterization of GaAs crystals with different degrees of compensation - Electronic Raman scattering of photoneutralized acceptors
Seelewind, H.; Wagner, J. | Journal Article |
| 1988 | Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J. | Journal Article |
| 1987 | Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J. | Conference Paper |
| 1987 | Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J. | Conference Paper |
| 1986 | Electronic raman scattering from residual acceptors in GaAs
Seelewind, H.; Newman, R.C.; Maguire, J.; Wagner, J. | Conference Paper |
| 1986 | Optically induced far-infrared absorption from residual acceptors in as-grown GaAs
Koidl, P.; Seelewind, H.; Wagner, J. | Journal Article |
| 1986 | Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J. | Journal Article |