Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
Ali, F.; Liu, X.; Zhou, D.; Yang, X.; Xu, J.; Schenk, T.; Müller, J.; Schroeder, U.; Cao, F.; Dong, X.
Journal Article
2017Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan
Journal Article
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Conference Paper
2016Status of ferroelectric HfO2 based 1T FeFET memories
Mikolajick, T.; Schroeder, U.; Slesazeck, S.; Müller, S.; Schenk, T.; Müller, J.
Presentation
2015Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
Zhou, D.Y.; Guan, Y.; Vopson, M.M.; Xu, J.; Liang, H.L.; Cao, F.; Dong, X.L.; Mueller, J.; Schenk, T.; Schroeder, U.
Journal Article
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2015Ferroelectricity and antiferroelectricity of doped thin HfO2-based films
Park, M.H.; Lee, Y.H.; Kim, H.J.; Kim, Y.J.; Moon, T.; Do Kim, K.; Müller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T.; Hwang, C.S.
Journal Article
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Conference Paper
2015The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films
Guan, Yan; Zhou, Dayu; Xu, Jin; Liu, Xiaohua; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schroeder, Uwe
Journal Article
2015Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.
Journal Article
2015Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications
Knebel, Steve; Pešić, Milan; Cho, Kyuho; Chang, Jaewan; Lim, Hanjin; Kolomiiets, Nadiia; Afanasyev, Valeri; Mühle, Uwe; Schröder, Uwe; Mikolajick, Thomas
Journal Article
2014Disrupted cross-laminar cortical processing in β amyloid pathology precedes cell death
Lison, H.; Happel, M.F.K.; Schneider, F.; Baldauf, K.; Kerbstat, S.; Seelbinder, B.; Schneeberg, J.; Zappe, M.; Goldschmidt, J.; Budinger, E.; Schröder, U.H.; Ohl, F.W.; Schilling, S.; Demuth, H.-U.; Scheich, H.; Reymann, K.G.; Rönicke, R.
Journal Article
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Conference Paper
2014Ferroelectric and antiferroelectric properties of Si-doped HfO2 thin films
Zhou, D.Y.; Xu, J.; Müller, J.; Schröder, U.
Journal Article
2014Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
Martin, D.; Müller, J.; Schenk, T.; Arruda, T.M.; Kumar, A.; Strelcov, E.; Yurchuk, E.; Müller, S.; Pohl, D.; Schröder, U.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of scaling on the performance of HfO2-based ferroelectric field effect transistors
Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müller, S.; Slesazeck, S.; Schroeder, U.; Boschke, R.; Bentum, R. van; Mikolajick, T.
Journal Article
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
2013(Invited) Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Martin, D.; Müller, J.; Yurchuk, E.; Mueller, S.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T.
Journal Article
2013Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Mueller, S.; Mueller, J.; Yurchuk, E.; Martin, D.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Yurchuk, E.; Müller, J.; Knebel, S.; Sundqvist, J.; Graham, A.P.; Melde, T.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Weber, W.M.; Schröder, U.; Riechert, H.; Mikolajick, T.
Journal Article
2013Reliability characteristics of ferroelectric Si: HfO2 thin films for memory applications
Mueller, S.; Müller, J.; Schroeder, U.; Mikolajick, T.
Journal Article
2013Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Zhou, D.Y.; Xu, J.; Li, Q.; Guan, Y.; Cao, F.; Dong, X.L.; Müller, J.; Schenk, T.; Schröder, U.
Journal Article
2012Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
Olsen, T.; Schröder, U.; Müller, S.; Krause, A.; Martin, D.; Singh, A.; Müller, J.; Geidel, M.; Mikolajick, T.
Journal Article
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Ferroelectricity in simple binary ZrO2 and HfO2
Müller, J.; Böscke, T.S.; Schröder, U.; Mueller, S.; Bräuhaus, D.; Böttger, U.; Frey, L.; Mikolajick, T.
Journal Article
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Incipient ferroelectricity in Al-doped HfO2 thin films
Mueller, Stefan; Mueller, Johannes; Singh, Aarti; Riedel, Stefan; Sundqvist, Jonas; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2012Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films
Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.
Journal Article
2012LaaN: convergence of knowledge management and technology-enhanced learning
Chatti, M.A.; Jarke, M.; Schroeder, U.
Journal Article
2012Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2
Müller, J.; Böscke, T.S.; Schröder, U.; Hoffmann, R.; Mikolajick, T.; Frey, L.
Journal Article
2012Non-volatile data storage in HfO2-based ferroelectric FETs
Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.
Conference Paper
2012Ten-nanometer ferroelectric Si:HfO2 films for next-generation FRAM capacitors
Mueller, S.; Summerfelt, S.R.; Muller, J.; Schroeder, U.; Mikolajick, T.
Journal Article
2011Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Müller, J.; Böscke, T.S.; Bräuhaus, D.; Schröder, U.; Böttger, U.; Sundqvist, J.; Kcher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Ferroelectricity in hafnium oxide thin films
Böscke, T.S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U.
Journal Article
2011Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors
Boschke, T.S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U.
Conference Paper
2011Ferroelectricity in yttrium-doped hafnium oxide
Müller, J.; Schröder, U.; Böscke, T.S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.M.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.
Journal Article
2011Model-driven mashup personal learning environments
Chatti, M.A.; Jarke, M.; Specht, M.; Schroeder, U.; Dahl, D.
Journal Article
2011Phase transitions in ferroelectric silicon doped hafnium oxide
Böscke, T.S.; Teichert, S.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.
Journal Article
2010Modeling of leakage currents in high-k dielectrics: Three-dimensional approach via kinetic Monte Carlo
Jegert, G.; Kersch, A.; Weinreich, W.; Schröder, U.; Lugli, P.
Journal Article
2010Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
Zhou, D.; Schroeder, U.; Xu, J.; Weinreich, W.; Heitmann, J.; Jegert, G.; Kerber, M.; Knebel, S.; Erben, E.; Mikolajick, T.
Journal Article
2009Atomic layer deposition of high-permittivity yttrium-doped HfO2 films
Niinistö, J; Kukli, K.; Sajavaara, T.; Ritala, M.; Leskela, M.; Oberbeck, L.; Sundqvist, J.; Schröder, U.
Journal Article
2009Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.
Conference Paper, Journal Article
2009Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics
Schroeder, U.; Weinreich, W.; Erben, E.; Mueller, J.; Wilde, L.; Heitmann, J.; Agaiby, R.; Zhou, D.; Jegert, G.; Kersch, A.
Conference Paper
2009Fraunhofer Institute for Systems and Innovation Research. Annual Report 2008
: Erben, K.-M.; Schröder, U.; Ziegaus, S.
Annual Report
2009Fraunhofer-Institut für System- und Innovationsforschung. Jahresbericht 2008
: Erben, K.-M.; Schröder, U.; Ziegaus, S.
Annual Report
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
Müller, J.; Böscke, T.S.; Schröder, U.; Reinicke, M.; Oberbeck, L.; Zhou, D.; Weinreich, W.; Kücher, P.; Lemberger, M.; Frey, L.
Conference Paper, Journal Article
2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2009Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks
Pakaleva, A.; Lemberger, M.; Bauer, A.J.; Weinreich, W.; Heitmann, J.; Erben, E.; Schröder, U.; Oberbeck, L.
Journal Article
2008Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor
Kim, J.-H.; Ignatova, V.; Kücher, P.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2008Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.
Journal Article
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster
2002Topic Maps zur Realisierung von Ontologien im Kontext der Vision des Semantic Web
Haller, C.; Schroeder, U.
Conference Paper
1996Reflections on WWW functionalities for educational purposes
Knierriem-Jasnoch, A.; Tritsch, B.; Schroeder, U.
Journal Article
1995A Modular Training System for Education in the WWW Environment
Schroeder, U.; Tritsch, B.; Knierriem-Jasnoch, A.
Conference Paper