Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
20191700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
Ni, W.; Wang, X.; Xiao, H.; Xu, M.; Li, M.; Schlichting, H.; Erlbacher, T.
Conference Paper
2019Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure
Ni, W.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q.; Schlichting, H.; Erlbacher, T.
Conference Paper
2019Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T.
Conference Paper
2019Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Schlichting, Holger; Kocher, Matthias; Weiße, Julietta; Erlbacher, Tobias; Bauer, Anton J.
Poster
2019Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias
Poster
2018Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Conference Paper
2017Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Poster
2014Determination of residence time distributions in different high pressure gasification processes by radioactive tracers
Ortwein, A.; Zeuner, A.; Jentsch, T.; Zeißler, R.; Seifert, P.; Schlichting, H.; Meyer, B.
Journal Article