Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage
Ali, F.; Liu, X.; Zhou, D.; Yang, X.; Xu, J.; Schenk, T.; Müller, J.; Schroeder, U.; Cao, F.; Dong, X.
Journal Article
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Conference Paper
2016Status of ferroelectric HfO2 based 1T FeFET memories
Mikolajick, T.; Schroeder, U.; Slesazeck, S.; Müller, S.; Schenk, T.; Müller, J.
Presentation
2015Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
Zhou, D.Y.; Guan, Y.; Vopson, M.M.; Xu, J.; Liang, H.L.; Cao, F.; Dong, X.L.; Mueller, J.; Schenk, T.; Schroeder, U.
Journal Article
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2015The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films
Guan, Yan; Zhou, Dayu; Xu, Jin; Liu, Xiaohua; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schroeder, Uwe
Journal Article
2015Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.
Journal Article
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Conference Paper
2014Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
Martin, D.; Müller, J.; Schenk, T.; Arruda, T.M.; Kumar, A.; Strelcov, E.; Yurchuk, E.; Müller, S.; Pohl, D.; Schröder, U.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Zhou, D.Y.; Xu, J.; Li, Q.; Guan, Y.; Cao, F.; Dong, X.L.; Müller, J.; Schenk, T.; Schröder, U.
Journal Article
2007Efficient and modular algorithms in modeling finite inelastic deformations: Objective integration, parameter identification and sub-stepping techniques
Seifert, T.; Schenk, T.; Schmidt, I.
Journal Article
2007A simple analogous model for the determination of cyclic plasticity parameters of thin wires to model wire drawing
Schenk, T.; Seifert, T.; Brehm, H.
Journal Article
1988Simplified detection of biological dehalogenation with a halide sensor
Otto, M.K.; Mörseberger, F.; Müller, R.; Schenk, T.; Thiele, J.; Kulbe, K.-D.
Conference Paper
1987Vereinfachte Messung biologischer Halogenisierungsreaktionen mit einem Halogenidsensor
Otto, M.K.; Müller, R.; Schenk, T.; Thiele, J.; Kulbe, K.-D.
Conference Paper