Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Ion implantation of polypropylene films for the manufacture of thin film capacitors
Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Djupmyr, M.
Conference Paper
2015Thermal laser separation - a novel dicing technology fulfilling the demands of volume manufacturing of 4H-SiC devices
Lewke, D.; Dohnke, K.O.; Zühlke, H.U.; Cerezuela Barret, M.; Schellenberger, M.; Bauer, A.; Ryssel, H.
Conference Paper
2014High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using thermal laser separation
Lewke, D.; Koitzsch, M.; Dohnke, K.O.; Schellenberger, M.; Zuehlke, H.-U.; Rupp, R.; Pfitzner, L.; Ryssel, H.
Conference Paper
2014Modification of polypropylene films for thin film capacitors by ion implantation
Häublein, V.; Birnbaum, E.; Ryssel, H.; Frey, L.; Grimm, W.
Conference Paper
2014Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth
Maier, R.; Häublein, V.; Ryssel, H.
Conference Paper
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2013Apertureless SNOM imaging of the surface phonon polariton waves. What do we measure?
Kazantsev, D.V.; Ryssel, H.
Journal Article
2013Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
Häublein, V.; Temmel, G.; Mitlehner, H.; Rattmann, G.; Strenger, C.; Hürner, A.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2013Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
Ouennoughi, Z.; Strenger, C.; Bourouba, F.; Haeublein, V.; Ryssel, H.; Frey, L.
Journal Article
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Conference Paper
2013Improving electric behavior and simplifying production of Si-based diodes by using thermal laser separation
Koitzsch, M.; Lewke, D.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Kolb, R.; Zühlke, H.-U.
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2013Scanning head for the apertureless near field optical microscope
Kazantsev, D.V.; Ryssel, H.
Journal Article
2013Simulation and design optimization of transparent heaters for spectroscopic micro cells
Völlm, H.; Herrmann, J.; Maier, R.; Feili, D.; Häublein, V.; Ryssel, H.; Seidel, H.
Conference Paper
2012Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200 mm/s by Using Thermal Laser Separation
Lewke, Dirk; Koitzsch, Matthias; Schellenberger, Martin; Pfitzner, Lothar; Ryssel, Heiner; Zühlke Hans-Ulrich
Conference Paper
2012Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
Schwarzmann, Holger; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar
Conference Paper
2012Angular distributions of sputtered silicon at grazing gallium ion beam incidence
Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner
Journal Article, Conference Paper
2012Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.
Conference Paper
2012Enhancements in resizing single crystalline silicon wafers up to 450 mm by using thermal laser separation
Koitzsch, M.; Lewke, D.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Zühlke, H.U.
Conference Paper
2012Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation
Häublein, V.; Ryssel, H.; Frey, L.
Journal Article
2012Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
Maier, R.; Häublein, V.; Ryssel, H.; Völlm, H.; Feili, D.; Seidel, H.; Frey, L.
Conference Paper
2012Thermal laser separation and its applications
Lewke, Dirk; Koitzsch, Matthias; Schellenberger, Martin; Pfitzner, Lothar; Ryssel, Heiner; Zühlke, Hans-Ulrich
Journal Article
20114H-SiC n-MOSFET logic circuits for high temperature operation
Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2011Conduction mechanisms and environmental sensitivity of solution-processed silicon nanoparticle layers for thin-film transistors
Weis, S.; Körmer, R.; Jank, M.P.M.; Lemberger, M.; Otto, M.; Ryssel, H.; Peukert, W.; Frey, L.
Journal Article
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Journal Article, Conference Paper
2011Dielectric layers suitable for high voltage integrated trench capacitors
Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2011Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters
Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L.
Journal Article
2011Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation
Strenger, C.; Bauer, A.J.; Ryssel, H.
Conference Paper
2011Effects of oxygen and forming gas annealing on ZnO TFTs
Huang, J.; Radhakrishna, U.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Conference Paper
2011Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2011High pressure oxidation of 4H-SiC in nitric acid vapor
Kalai Selvi, K.; Sreenidhi, T.; Dasgupta, N.; Ryssel, H.; Bauer, A.
Journal Article
2011Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
Le-Huu, M.; Schmitt, H.; Noll, S.; Grieb, M.; Schrey, F.F.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2011Modulares Steuerungskonzept für integrierte Messtechnik in der Halbleiterfertigung am Beispiel einer Mehrkammerprozessanlage
Schellenberger, Martin
: Ryssel, H.; Frey, L.
Dissertation
2011Monolithic RC-snubber for power electronic applications
Dorp, Joachim vom; Berberich, Sven E.; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar
Conference Paper
2011A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions
Lorentz, V.R.H.; Schwarzmann, H.; März, M.; Bauer, A.J.; Ryssel, H.; Frey, L.; Poure, P.; Braun, F.
Journal Article
2011Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors
Walther, S.; Polster, S.; Meyer, B.; Jank, M.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2011Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment
Walther, S.; Polster, S.; Jank, M.P.M.; Thiem, H.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
20102D Angular distributions of ion sputtered germanium atoms under grazing incidence
Sekowski, M.; Burenkov, A.; Ryssel, H.
Conference Paper, Journal Article
2010Aerosol synthesis of silicon nanoparticles with narrow size distribution. Pt.1: Experimental investigations
Körmer, R.; Jank, M.P.M.; Ryssel, H.; Schmid, H.-J.; Peukert, W.
Journal Article
2010Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2010Deep doping profiles in silicon created by MeV hydrogen implantation: Influence of implantation parameters
Laven, J.G.; Schulze, H.-J.; Häublein, V.; Niedernostheide, F.-J.; Schulze, H.; Ryssel, H.; Frey, L.
Conference Paper
2010Effective work function tuning in high-kappa dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article
2010Effects of oxygen and forming gas annealing on ZnO-TFTs
Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Poster
2010Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Book Article
2010FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2010Impact of forming gas annealing on ZnO-TFTs
Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Ryssel, H.; Frey, L.
Conference Paper
2010The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon
Laven, J.G.; Job, R.; Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L.
Conference Paper
2010The impact of helium co-implantation on hydrogen induced donor profiles in float zone silicon
Schulze, H.-J.; Niedernostheide, F.-J.; Häublein, V.; Schulze, H.; Schustereder, W.; Ryssel, H.; Frey, L.; Job, R.; Laven, J.G.
Journal Article, Conference Paper
2010Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles
Walther, S.; Schäfer, S.; Jank, M.P.M.; Thiem, H.; Peukert, W.; Ryssel, H.; Frey, L.
Journal Article
2010Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil
Dorp, J. vom; Erlbacher, T.; Lorentz, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Lanthanoid implantation for effective work function control in NMOS high-k/metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Lossless average inductor current sensor for CMOS integrated DC-DC converters operating at high frequencies
Lorentz, V.R.H.; Berberich, S.E.; März, M.; Bauer, A.J.; Ryssel, H.; Poure, P.; Braun, F.
Journal Article
2010Modeling of the effective work function instability in metal/high-kappa dielectric stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article
2010NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications
Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Polymer bonded soft magnetics for EMI filter applications in power electronics
Engelkraut, S.; Ryssel, H.; Frey, L.; Rauch, M.; Schletz, A.; März, M.
Conference Paper
2009Analysis of the DC-arc behavior of a novel 3D-active fuse
Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Charakterisierung und Modellierung von Ladungseinfangmechanismen in dielektrischen Speicherschichten
Klar, O.
: Ryssel, H. (Prüfer)
Dissertation
2009Complementary metrology within a European joint laboratory
Nutsch, A.; Beckhoff, B.; Altmann, R.; Berg, J.A. van den; Giubertoni, D.; Hoenicke, P.; Bersani, M.; Leibold, A.; Meirer, F.; Müller, M.; Pepponi, G.; Otto, M.; Petrik, P.; Reading, M.; Pfitzner, L.; Ryssel, H.
Conference Paper
2009Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2009Experimental observation of FIB induced lateral damage on silicon samples
Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes"
Toumi, S.; Ferhat-Hamida, A.; Boussouar, L.; Sellai, A.; Ouennoughi, Z.; Ryssel, H.
Journal Article, Conference Paper
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Influence of the oxidation temperature and atmosphere on the reliability of thick gate oxides on the 4H-SiC C(000-1) face
Grieb, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Ryssel, H.
Conference Paper
2009Lanthanum implantation for threshold voltage control in metal/high-k devices
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper, Journal Article
2009Light-load efficiency increase in high-frequency integrated DC–DC converters by parallel dynamic width controlling
Lorentz, V.; Berberich, S.; März, M.; Bauer, A.; Ryssel, H.; Poure, P.; Braun, F.
Journal Article
2009Performance optimization of semiconductor manufacturing equipment by the application of discrete event simulation
Pfeffer, M.; Pfitzner, L.; Ocker, B.; Öchsner, R.; Ryssel, H.; Verdonck, P.
Conference Paper
2009Properties of TaN thin films produced using PVD linear dynamic deposition technique
Kozlowska, M.; Oechsner, R.; Pfeffer, M.; Bauer, A.J.; Meissner, E.; Pfitzner, L.; Ryssel, H.; Maass, W.; Langer, J.; Ocker, B.; Schmidbauer, S.; Gonchond, J.-P.
Journal Article, Conference Paper
2009Silicon based trench hole power capacitor
Berberich, S.E.; Dorp, J. vom; Bauer, A.J.; Ryssel, H.
Journal Article
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2009Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers
Erlbacher, T.; Graf, T.; DasGupta, N.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Transmission-electron-microscopy observation of Pt pillar fabricated by electron-beam-induced deposition
Murakami, K.; Matsubara, N.; Ichikawa, S.; Kisa, T.; Nakayama, T.; Takamoto, K.; Wakaya, F.; Takai, M.; Petersen, S.; Amon, B.; Ryssel, H.
Journal Article
2009UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles
Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.
Conference Paper
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Journal Article
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Journal Article
2008Barrier inhomogeneities of tungsten Schotty diodes on 4H-SiC
Hamida, A.F.; Ouennoughi, Z.; Sellai, A.; Weiss, R.; Ryssel, H.
Journal Article
2008Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition
Roeder, G.; Manke, C.; Baumann, P.K.; Petersen, S.; Yanev, V.; Gschwandtner, A.; Ruhl, G.; Petrik, P.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.
Conference Paper, Journal Article
2008Custom-specific UV nanoimprint templates and life-time of antisticking layers
Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008DC-arc behavior of a novel active fuse
Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper
2008Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.
Journal Article
2008Detailed carrier lifetime analysis of iron-contaminated boron-doped silicon by comparison of simulation and measurement
Rommel, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.
Journal Article
2008Electrical AFM techniques for the advanced characterization of materials in semiconductor technology
Yanev, V.; Rommel, M.; Spoldi, G.; Beuer, S.; Amon, B.; Petersen, S.; Lugstein, A.; Steiger, A.; Bauer, A.J.; Ryssel, H.
Poster
2008Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008Experimental observation of FIB induced lateral damage on silicon samples
Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H.
Poster
2008Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2007
: Öchsner, R.; Ryssel, H.
Annual Report
2008HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories
Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008Highly filled polymers for power passives packaging
Egelkraut, S.; Heinle, C.; Eckardt, B.; Krämer, P.; Brocka, Z.; März, M.; Ryssel, H.; Ehrenstein, G.W.
Conference Paper
2008Ion implantation into nanoparticulate functional layers
Walther, S.; Jank, M.P.M.; Ebbers, A.; Ryssel, H.
Conference Paper
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Polymer bonded soft magnetic particles for planar inductive devices
Egelkraut, S.; Ryssel, H.; März, M.
Conference Paper
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Recent improvements in the integration of field emitters into scanning probe microscopy sensors
Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Segregation of antimony to Si/SiO2 interfaces
Steen, C.; Pichler, P.; Ryssel, H.
Journal Article
2008Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C.
Journal Article
2008Simulation of mass interferences considering charge exchange events and dissociation of molecular ions during extraction
Häublein, V.; Frey, L.; Ryssel, H.
Conference Paper
2008SSRM characterisation of FIB induced damage in silicon
Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Threshold voltage engineering by lanthanide doping of the MOS gate stack
Fet, A.; Häublein, V.; Ryssel, H.
Conference Paper
2008Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.
Journal Article
2008UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Accurate parameter extraction for the simulation of direct structuring by ion beams
Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007Approach for a standardized methodology for multisite processing of 300-mm wafers at R&D sites
Oechsner, R.; Pfeffer, M.; Frickinger, J.; Schellenberger, M.; Roeder, G.; Pfitzner, L.; Ryssel, H.; Fritzsche, M.; Kaushik, V.; Renaud, D.; Danel, A.; Claeys, C.; Bearda, T.; Lering, M.; Graef, M.; Murphy, B.; Walther, H.; Hury, S.
Journal Article
2007Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon
Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.
Journal Article
2007Characterization of the pile-up of As at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.
Conference Paper
2007Characterization of the Segregation of Arsenic at the Interface SiO2/Si
Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.
Conference Paper
2007Custom-specific UV nanoimprint templates and life-time of antisticking layers
Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Detailed photocurrent analysis of iron contaminated boron doped silicon by comparison of simulation and measurement
Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007Detection and review of crystal originated surface and sub surface defects on bare silicon
Nutsch, A.; Funakoshi, T.; Pfitzner, L.; Steffen, R.; Supplieth, F.; Ryssel, H.
Conference Paper
2007Electrical characterization of low dose focused ion beam induced damage in silicon by scanning spreading resistance microscopy
Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2006
: Öchsner, R.; Ryssel, H.
Annual Report
2007Hafnium silicate as control oxide in non-volatile memories
Erlbacher, T.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007High temperature implantation of aluminum in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007High voltage 3D-capacitor
Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Frey, L.; Ryssel, H.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.
Journal Article
2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Abstract
2007Quantitative oxide charge determination by photocurrent analysis
Rommel, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2007Recent improvements in the integration of field emitters into scanning probe microscopy sensors
Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H.
Poster
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster
2007UV nanoimprint materials: Surface energies, residual layers, and imprint quality
Schmitt, H.; Frey, L.; Ryssel, H.; Rommel, M.; Lehrer, C.
Journal Article
2007Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique
Yanev, V.; Paskaleva, A.; Weinreich, W.; Lemberger, M.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2006Accurate parameter extraction for the simulation of direct structuring by ion beams
Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H.
Poster
2006Active Fuse
Berberich, S.E.; März, M.; Bauer, A.J.; Beuer, S.; Ryssel, H.
Conference Paper
2006Approach for a standardized methodology for mulit-site processing of 300 mm wafers at R&D-sites
Öchsner, R.; Frickinger, J.; Pfeffer, M.; Schellenberger, M.; Roeder, G.; Pfitzner, L.; Ryssel, H.; Fritzsche, M.; Kaushik, V.; Renaud, D.; Danel, A.; Claeys, C.; Bearda, T.; Lering, M.; Graef, M.; Murphy, B.; Walther, H.; Hury, S.
Conference Paper
2006Bekleidungsstueck
Ryssel, H.; Maerz, M.
Patent
2006Creation of e-learning content for microelectronics manufacturing
Öchsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M.; Mey, B. de; Engelhard, M.; O'Murchu, C.; Ditmar, J.; Colson, P.; Madore, M.; Krahn, L.; Kempe, W.; Luisman, E.
Conference Paper
2006Creation of e-learning content for microelectronics manufacturing
Öchsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M.; Mey, B. de; Engelhard, M.; O'Murchu, C.; Ditmar, J.; Colson, P.; Madore, M.; Krahn, L.; Kempe, W.; Luisman, E.
Conference Paper
2006Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements
Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2006Flying Wafer - A standardised methodology for multi-site processing of 300 mm wafers at R&D-sites
Frickinger, J.; Oechsner, R.; Schellenberger, M.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Claeys, C.; Claes, M.; Bearda, T.; Renaud, D.; Danel, A.; Lering, M.; Graef, M.; Kaushik, V.; Murphy, B.; Fritzsche, M.; Walther, H.; Hury, S.
Conference Paper
2006Flying wafer - A standardised methodology for multi-site processing Of 300 Mm wafers at research and development-sites
Frickinger, J.; Öchsner, R.; Schellenberger, M.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Claes, M.; Bearda, T.; Renaud, D.; Danel, A.; Lering, M.; Graef, M.; Kaushik, V.; Murphy, B.; Fritzsche, M.; Walther, H.; Hury, S.
Conference Paper
2006Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2005
: Öchsner, R.; Ryssel, H.
Annual Report
2006High temperature implantation of aluminum in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2006The impact of mass resolution on molybdenum contamination for B, P, BF, and as implantations
Häublein, V.; Frey, L.; Ryssel, H.
Conference Paper
2006Optical and X-ray characterization of ferroelectric strontium-bismuth-tantalate (SBT) thin films
Fried, M.; Petrik, P.; Horvath, Z.E.; Lohner, T.; Schmidt, C.; Schneider, C.; Ryssel, H.
Conference Paper, Journal Article
2006Prospects for the realization of APC in a distributed 300 mm R&D-line
Roeder, G.; Schellenberger, M.; Öchsner, R.; Pfeffer, M.; Frickinger, J.; Pfitzner, L.; Ryssel, H.; Fritzsche, M.
Conference Paper
2006Standardization of integrated ellipsometry for semiconductor manufacturing
Roeder, G.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Richter, U.; Stehle, J.L.; Piel, J.-P.
Conference Paper
2006Well design in a bulk CMOS technology with low mask count
Jank, M.P.M.; Kandziora, C.; Frey, L.; Ryssel, H.
Conference Paper
2005Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction
Häublein, V.; Frey, L.; Ryssel, H.
Conference Paper
2005Annealing of aluminum implanted 4H-SiC
Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H.
Conference Paper
2005Characterization of interface state densities by photocurrent analysis. Comparison of results for different insulator layers
Rommel, M.; Groß, M.; Ettinger, A.; Bauer, A.J.; Frey, L.; Ryssel, H.
Poster
2005Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers
Rommel, M.; Groß, M.; Ettinger, A.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2005Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren
Frey, L.; Bauer, A.; Ryssel, H.
Journal Article
2005Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2005Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2004
: Öchsner, R.; Ryssel, H.
Annual Report
2005High-k hafnium silicate films on silicon and germanium wafers by MOCVD using a single-source precursor
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Paskaleva, A.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2005Implantation and annealing of aluminum in 4H silicon carbide
Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2005Investigations into the wear of a WL10 ion source
Häublein, V.; Sadrawetz, S.; Frey, L.; Martinz, H.-P.; Ryssel, H.
Conference Paper
2005Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Conference Paper, Journal Article
2005Reliable matching of 300 mm defect inspection tools @ sub 60 nm defect size
Nutsch, A.; Supplieth, F.; Pfitzner, L.; Ryssel, H.
Conference Paper
2005Thin Hf(x)Ti(y)Si(z)O films with varying Hf to Ti contents as candidates for high-k dielectrics
Bauer, A.J.; Paskaleva, A.; Lemberger, M.; Frey, L.; Ryssel, H.
Conference Paper
2005Triple trench gate IGBTs
Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2005Unit process aspects for APC-software implementation
Roeder, G.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Spitzlsperger, G.
Conference Paper
2005Wafer scale characterization of interface state densities without test structures by photocurrent analysis
Rommel, M.; Groß, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
20043D feature-scale simulation of sputter etching with coupling to equipment simulation
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2004Design, fabrication and characterization of a microactuator for nebulization of fluids
Yasenov, N.; Berberich, S.E.; Frey, L.; Ryssel, H.
Conference Paper
2004E-Learning for microelectronics manufacturing
Oechsner, R.; Pfeffer, M.; Pfitzner, L.; Ryssel, H.; Beer, K.; Boldin, M.
Conference Paper
2004Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2004Fibroblasts adhesion on ion beam modified polyethylene
Svorcik, V.; Tomsov, P.; Dvornkov, B.; Hnatowicz, V.; Ochsner, R.; Ryssel, H.
Journal Article
2004Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2003
: Öchsner, R.; Ryssel, H.
Annual Report
2004Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams
Lehrer, C.; Frey, L.; Petersen, S.; Ryssel, H.; Schäfer, M.; Sulzbach, T.
Journal Article
2004Investigation of rapid thermal annealed pn-junctions in SiC
Rambach, M.; Weiss, R.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2004Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Conference Paper
2004Measurement data evaluation for in situ single-wavelength ellipsometry during reactive ion etching
Roeder, G.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Presentation
2004Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation
Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper, Journal Article
2004Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films
Schmidt, C.; Petrik, P.; Schneider, C.; Fried, M.; Lohner, T.; Barsony, I.; Gyulai, J.; Ryssel, H.
Conference Paper, Journal Article
2004Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.
Conference Paper
2004Three-dimensional simulation of ionized metal plasma vapor deposition
Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper, Journal Article
2004Verfahren zur Verringerung der Partikelabgabe und Partikelaufnahme einer Oberflaeche
Birnbaum, E.; Kluge, A.; Ryssel, H.; Ryzlewicz, C.
Patent
2003Defect inspection method for quality control in a reclaim line
Nutsch, A.; Fritsche, M.; Dudenhausen, H.-M.; Pfitzner, L.; Ryssel, H.
Conference Paper
2003Different ion implanted edge terminations for Schottky diodes on SiC
Weiss, R.; Frey, L.; Ryssel, H.
Conference Paper
2003Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2003ENCOTION - A new simulation tool for energetic contamination analysis
Häublein, V.; Frey, L.; Ryssel, H.
Conference Paper
2003Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2002
: Öchsner, R.; Ryssel, H.
Annual Report
2003Influence of antenna shape and resist patterns on charging damage during ion implantation
Dirnecker, T.; Bauer, A.J.; Beyer, A.; Frey, L.; Henke, D.; Ruf, A.; Ryssel, H.
Conference Paper
2003Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents
Jank, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2003Investigation of lanthanum contamination from a lanthanated tungsten ion source
Häublein, V.; Walser, H.; Frey, L.; Ryssel, H.
Conference Paper
2003Nanoscale effects in focused ion beam processing
Frey, L.; Lehrer, C.; Ryssel, H.
Journal Article
2003Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2003Trench sidewall doping for lateral power devices
Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2003VORRICHTUNG ZUR UEBERWACHUNG VON ABSICHTLICHEN ODER UNVERMEIDBAREN SCHICHTABSCHEIDUNGEN UND VERFAHREN
Ziegler, J.; Waller, R.; Pfitzner, L.; Schneider, C.; Ryssel, H.; Tegeder, V.
Patent
2003Wafer reclaim in semiconductor manufacturing
Frickinger, J.; Nutsch, A.; Pfitzner, L.; Ryssel, H.; Zielonka, G.
Book Article
2003Zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2002Algorithmen für die dreiecksbasierte dreidimensionale Simulation bewegter Oberflächen in der Halbleitertechnologie
Lenhart, O.
: Ryssel, H. (Prüfer)
Dissertation
2002Cell adhesion on modified polyethylene
Svorcik, V.; Rockova, K.; Dvorancova, B.; Broz, L.; Hnatowicz, V.; Öchsner, R.; Ryssel, H.
Journal Article
2002Characterisation of BaxSr1-xTiO3 films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction
Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zolnai, Z.; Barsony, I.; Lohner, T.; Fried, M.; Gyulai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.
Journal Article
2002Determination of aluminum diffusion parameters in silicon
Krause, O.; Pichler, P.; Ryssel, H.
Journal Article
2002Development of enhanced depth-resolution technique for shallow dopant profiles
Fujita, M.; Tajima, J.; Nakagawa, T.; Abo, S.; Kinomura, A.; Paszti, F.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H.
Journal Article
2002Effect of barium contamination on gate oxide integrity in high-k DRAM
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Bauer, A.; Frey, L.; Ryssel, H.
Journal Article
2002Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2001
: Öchsner, R.; Ryssel, H.; Pfeffer, M.
Annual Report
2002HandMon-ISPM: Handling monitoring in a loading stations of a furnaces
Trunk, R.; Schmid, H.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Bernhardt, H.; Marx, E.
Conference Paper
2002Influence of photoresist pattern on charging damage during high current ion implantation
Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, A.; Bauer, A.J.; Henke, D.; Ryssel, H.
Conference Paper
2002MOCVD of titanium dioxide on the basis of new precursors
Leistner, T.; Lehmbacher, K.; Härter, P.; Schmidt, C.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2002Non-destructive characterization of strontium bismuth tantalate films
Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zoknai, P.Z.; Barsony, I.; Lohner, T.; Freid, M.; Guylai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.
Journal Article
2002Phi-scatterometry for integrated linewidth and process control in DRAM manufacturing
Hettwer, A.; Benesch, N.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Journal Article
2002Platinum contamination issues in ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Pamler, W.; Hopfner, J.; Frey, L.; Ryssel, H.
Journal Article
2002Recombination lifetimes of iron-contaminated silicon wafers: Characterization using a single set of capture cross-sections
Rommel, M.; Zoth, G.; Ullrich, M.; Ryssel, H.
Journal Article
2002Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article
2002Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung
Schnupp, R.; Ryssel, H.; Oechsner, R.
Patent
2001Amino acids grafting of Ar+ ions modified PE
Svorcik, V.; Hnatowicz, V.; Stopka, P.; Bacáková, L.; Heitz, J.; Öchsner, R.; Ryssel, H.
Journal Article
2001Barium, strontium and bismuth contamination in CMOS processes
Boubekeur, H.; Mikolajick, T.; Höpfner, J.; Dehm, C.; Pamler, W.; Steiner, J.; Kilian, G.; Kolbesen, B.O.; Bauer, A.; Frey, L.; Ryssel, H.
Conference Paper
2001Control of organic contamination in CMOS manufacturing
Bügler, J.; Frickinger, J.; Zielonka, G.; Pfitzner, L.; Ryssel, H.; Schottler, M.
Conference Paper
2001Development of sensors for the measurement of chamber wall depositions
Schneider, C.; Pfitzner, L.; Ryssel, H.; Marx, E.; Schneider, T.
Conference Paper
2001Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides
Jank, M.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2001Emission of volatile degradation products from polymers irradiated with heavy ions to different fluences
Hnatowicz, V.; Vacik, J.; Svorcik, V.; Rybka, V.; Ryssel, H.; Kluge, A.
Journal Article
2001Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused Ion beam nano machining
Lehrer, C.; Frey, L.; Petersen, S.; Sulzbach, T.; Ohlsson, O.; Dziomba, T.; Danzebrink, H.U.; Ryssel, H.
Journal Article
2001Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 2000
: Öchsner, R.; Ryssel, H.; Pfeffer, M.; Schmeing, M.
Annual Report
2001Impact of platinum contamination on ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H.
Journal Article
2001Improvement in electrical properties of Simni films by multiple-steps implantation
Lu, D.T.; Huang, D.; Ryssel, H.
Journal Article
2001In Situ Particle Measurement System in Loading Stations of Furnaces
Trunk, R.; Schmid, H.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Bernhardt, H.; Marx, E.
Conference Paper
2001In-situ measurement of the crystallization of amorphous- silicon in a vertical furnace using spectroscopic ellipsometry
Petrik, P.; Lehnert, W.; Schneider, C.; Lohner, T.; Fried, M.; Gyulai, J.; Ryssel, H.
Journal Article
2001In-situ particle measurement in loading stations of furnaces
Trunk, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Storbeck, O.
Conference Paper
2001The influence of target temperature and photon assistance on the radiation sefect formation in low-fluence ion-implanted silicon
Barabanenkov, M.Y.; Gyulai, J.; Leonov, A.V.; Mordkovich, V.N.; Omelyanovskaya, N.M.; Ryssel, H.
Journal Article
2001Integrated metrology. An enabler for advanced process control (APC)
Schneider, C.; Pfitzner, L.; Ryssel, H.
Conference Paper
2001Limitations of focused ion beam nanomachining
Lehrer, C.; Frey, L.; Petersen, S.; Ryssel, H.
Journal Article
2001On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets
Burenkov, A.; Mu, Y.; Ryssel, H.
Conference Paper
2001Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low-pressure in different gas atmospheres
Beichele, M.; Bauer, A.J.; Herden, M.; Ryssel, H.
Journal Article
2001Reliability of ultrathin nitrided oxides grown in low- pressure N2O ambient
Beichele, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2001Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode
Herden, M.; Bauer, A.J.; Beichele, M.; Ryssel, H.
Journal Article
2001Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices
Strobel, S.; Bauer, A.J.; Beichele, M.; Ryssel, H.
Journal Article
2001Trace analysis for 300 mm wafers and processes with total- reflection x-ray-fluorescence
Nutsch, A.; Erdmann, V.; Zielonka, G.; Pfitzner, L.; Ryssel, H.
Journal Article
2001Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination
Weiss, R.; Frey, L.; Ryssel, H.
Journal Article
20003D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2000Adhesion and proliferation of keratinocytes on ion beam modified polyethylene
Svorcik, V.; Walachova, K.; Proskova, K.; Dvoankova, B.; Vogtova, D.; Öchsner, R.; Ryssel, H.
Journal Article
2000Aspects of barium contamination in high dielectric dynamic random-access memories
Boubekeur, H.; Hopfner, J.; Mikolajick, T.; Dehm, C.; Frey, L.; Ryssel, H.
Journal Article
2000Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.
Journal Article
2000Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.
Journal Article
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
2000Defects and gallium - contamination during focused ion beam micro machining
Lehrer, C.; Frey, L.; Petersen, S.; Mizutani, M.; Takai, M.; Ryssel, H.
Conference Paper
2000Electrodeposition of photoresist - optimization of deposition conditions, investigation of lithographic processes and chemical-resistance
Schnupp, R.; Baumgärtner, R.; Kuhnhold, R.; Ryssel, H.
Journal Article
2000Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
Petrik, P.; Lohner, T.; Fried, M.; Biro, L.P.; Khanh, N.Q.; Gyulai, J.; Lehnert, W.; Schneider, C.; Ryssel, H.
Journal Article
2000Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling
Tajima, J.; Park, Y.K.; Fujita, M.; Takai, M.; Schork, R.; Frey, L.; Ryssel, H.
Conference Paper
2000Feed-forward control for a lithography/etch sequence
Öchsner, R.; Tschaftary, T.; Sommer, S.; Pfitzner, L.; Ryssel, H.; Gerath, H.; Baier, C.; Hafner, M.
Conference Paper
2000Field emitter array fabricated using focused ion and electron beam induced reaction
Yavas, O.; Ochiai, C.; Takai, M.; Park, Y.K.; Lehrer, C.; Lipp, S.; Frey, L.; Ryssel, H.; Hosono, A.; Okuda, S.
Journal Article
2000Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1999
: Öchsner, R.; Ryssel, H.
Annual Report
2000Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides
Jank, M.P.M.; Lemberger, M.; Frey, L.; Ryssel, H.
Conference Paper
2000In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace
Petrik, P.; Lehnert, W.; Schneider, C.; Fried, M.; Lohner, T.; Gyulai, J.; Ryssel, H.
Journal Article
2000In-production monitoring and control of in situ-chamber clean processes
Roeder, G.; Andrian-Werburg, M. von; Tschaftary, T.; Schneider, C.; Pfitzner, L.; Ryssel, H.; John, P.; Tegeder, V.
Conference Paper
2000Indirect-coupling ultraviolet-sensitive photodetector with high electrical gain, fast-response, and low-noise
Qian, F.; Schnupp, R.; Chen, C.Q.; Helbig, R.; Ryssel, H.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper
2000Modelling of intrinsic aluminum diffusion for future power devices
Krause, O.; Pichler, P.; Ryssel, H.
Conference Paper
2000Phi-scatterometry for on-line process control
Benesch, N.; Hettwer, A.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Broermann, O.; Marx, E.; Tegeder, V.
Conference Paper
2000Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
Conference Paper
2000Reducing airborne molecular contamination by efficient purging of FOUPs for 300-mm wafers. The influence of material properties
Frickinger, J.; Bügler, J.; Zielonka, G.; Pfitzner, L.; Ryssel, H.; Hollemann, S.; Schneider, H.
Journal Article
2000Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.; Stephani, D.; Ryssel, H.
Conference Paper
2000Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres
Beichele, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2000A silicon vibration sensor for tool state monitoring working in the high acceleration range
Thomas, J.; Kühnhold, R.; Schnupp, R.; Ryssel, H.
Journal Article
2000Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
Herden, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2000Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article
2000Vacancy-Nitrogen Complexes in Float-Zone Silicon
Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
2000Verfahren und Vorrichtung zur Ueberfuehrung eines Fluessigkeitsstromes in einen Gasstrom
Strzyzewski, P.; Roeder, G.; Pfitzner, L.; Ryssel, H.
Patent
1999AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite
Biro, L.P.; Mark, G.I.; Gyulai, J.; Havancszak, K.; Lipp, S.; Lehrer, C.; Frey, L.; Ryssel, H.
Journal Article
1999Application and cost analysis of scatterometry for integrated metrology
Benesch, N.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Conference Paper
1999Carbon nanotubes produced by high energy (E greater than 100MeV), heavy ion irradiation of graphite
Biro, L.P.; Szabo, B.; Mark, G.I.; Gyulai, J.; Havancsak, K.; Kurti, J.; Dunlop, A.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
1999Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone
Bauer, A.J.; Froeschle, B.; Beichele, M.; Ryssel, H.
Conference Paper
1999CMOS-kompatible Herstellung miniaturisierter Silicium-Vibrationssensoren für die Messung im Bereich hoher Beschleunigungsamplituden zur Werkzeugüberwachung
Thomas, J.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Comparison of beam-induced deposition using ion microprobe
Park, Y.S.; Nagai, T.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
1999Comparison of FIB-induced physical and chemical etching
Park, Y.K.; Paszti, F.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.
Conference Paper
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1999Design and sensitivity optimization of vibration sensors for tool state monitoring
Thomas, J.S.; Kuhnhold, R.; Ryssel, H.
Conference Paper
1999Development and characterization of a sensor for human information
Ghanem, W.
: Ryssel, H. (Prüfer)
Dissertation
1999Electrodeposition of photoresist: process optimization and chemical resistance
Schnupp, R.; Baumgärtner, R.; Kühnhold, R.; Ryssel, H.
Conference Paper
1999Elektrische Eigenschaften von MOCVD-Tantalpentoxid in Mehrschicht-Dielektrika
Roth, H.
: Ryssel, H. (Prüfer)
Dissertation
1999Equipment and wafer modeling of batch furnaces by neural networks
Benesch, N.; Schneider, C.; Lehnert, W.; Pfitzner, L.; Ryssel, H.
Conference Paper
1999Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Conference Paper
1999Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1998
: Öchsner, R.; Ryssel, H.
Annual Report
1999Impact of nitrogen implantation into polysilicon to reduce boron penetration through the gate oxide
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Conference Paper
1999Improving the Resolution of a Compact Ozone Photometer
Qian, F.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Impurity incorporation during beam assisted processing analyzed using nuclear microprobe
Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
1999In-situ particle measurements in liquids
Ryssel, H.; Ramin, M.; Schmidt, A.; Trunk, R.
Conference Paper
1999The influence of surface oxidation on the pH-sensing properties of silicon nitride
Mikolajick, T.; Kuhnhold, R.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe
Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.
Journal Article
1999Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Conference Paper
1999Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Conference Paper
1999Ionenquelle fuer eine Ionenstrahlanlage
Schork, R.; Ryssel, H.
Patent
1999Li+ grafting of ion irradiated polyethylene
Svorcik, V.; Rybka, V.; Vacik, J.; Hnatowicz, V.; Ochsner, R.; Ryssel, H.
Journal Article
1999Mainstream measurement and dosage of anaesthetic gases by using microsystems
Schnupp, R.; Temmel, G.; Ryssel, H.
Conference Paper
1999Mikrosystem zur automatisierten Werkzeugüberwachung in Drehmaschinen über die Erfassung von Vibration, Kraft und Temperatur
Pitter, F.; Thomas, J.; Feldmann, K.; Ryssel, H.
Journal Article
1999Mikrosystemtechnische Vibrationssensoren zur automatisierten Zustandsüberwachung von Drehwerkzeugen
Thomas, J.
: Ryssel, H. (Prüfer)
Dissertation
1999MOCVD of ferroelectric thin films
Schmidt, C.; Lehnert, W.; Leistner, T.; Frey, L.; Ryssel, H.
Conference Paper
1999Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1999Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition
Kal, S.; Ryssel, H.
Journal Article
1999Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition
Kal, S.; Ryssel, H.
Journal Article
1999Novel process control strategies for 300 mm semiconductor production
Pfitzner, L.; Oechsner, R.; Schneider, C.; Ryssel, H.; Riemer, M.; Podewils, M. von
Journal Article
1999On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1999Presence Monitoring Using Thermopile-Arrays
Ghanem, W.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Reliability of ultra-thin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon
Bauer, A.J.; Beichele; Herden, M.; Ryssel, H.
Conference Paper
1999Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite
Biro, L.P.; Mark, G.I.; Gyulai, J.; Rozlosnik, N.; Kurti, J.; Szabo, B.; Frey, L.; Ryssel, H.
Journal Article
1999A silicon vibration sensor for tool state monitoring working in the acceleration range
Thomas, J.; Kühnhold, R.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Simulation of a Coating Protection for an In Situ Ellipsometer in a CVD Furnace
Poscher, S.; Lehnert, W.; Ryssel, H.
Conference Paper
1999Simulation of a coating protection for an In Situ Ellipsometer in a CVD Furnace
Poscher, S.; Lehnert, W.; Ryssel, H.
Conference Paper
1999Simulation of the production of functional layers for vibration sensors for tool state monitoring and finite element analysis of mechanical characteristics
Thomas, J.; Kuhnhold, R.; Schnupp, R.; Temmel, G.; Ryssel, H.
Conference Paper
1999Simulation von widerstands- und lampenbeheizten Öfen für die Schichtabscheidung
Poscher, S.
: Ryssel, H. (Prüfer)
Dissertation
1999Stabilität von Metall-Oxid-Halbleiter-Strukturen auf hexagonalem Siliciumkarbid
Treu, M.
: Ryssel, H. (Prüfer)
Dissertation
1999Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering
Qian, F.; Temmel, G.; Schnupp, R.; Ryssel, H.
Conference Paper
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1999Wohltemperierte Siliziumscheiben - Simulation und Messung der Temperaturverteilung in einem vertikalen Schichtabscheideofen
Poscher, S.; Wellner, S.; Ryssel, H.
Journal Article
19984 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1998AFM surface investigation of polyethylene modified by ion bombardment
Svorcik, V.; Arenholz, E.; Hnatowicz, V.; Rybka, V.; Öchsner, R.; Ryssel, H.
Journal Article
1998Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon
List, S.; Ryssel, H.
Journal Article
1998Atomistic modeling of high-concentration effects of impurity diffusion in silicon
List, S.; Ryssel, H.
Journal Article
1998A compact ozone measurement system
Qian, F.; Jin, G.R.; Schnupp, R.; Temmel, G.; Ryssel, H.
Conference Paper
1998Comparative study of polysilicon-on-oxide using spectroscopy ellipsometry, atomic force microscopy and transformation electron microscopy
Petrik, P.; Fried, M.; Lohner, T.; Berger, R.; Biro, L.P.; Schneider, C.; Ryssel, H.; Gyulai, J.
Conference Paper
1998Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
Petrik, P.; Biro, L.P.; Fried, M.; Lohner, T.; Berger, R.; Schneider, C.; Gyulai, J.; Ryssel, H.
Journal Article
1998Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1998Fabrication of field emitter array using focused ion and electron beam induced reaction
Takai, M.; Kishimoto, T.; Morimoto, H.; Park, Y.K.; Lipp, S.; Lehrer, C.; Frey, L.; Ryssel, H.; Hosono, A.; Kawabuchi, S.
Conference Paper
1998Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Leistungen und Ergebnisse. Jahresbericht 1997
: Öchsner, R.; Ryssel, H.
Annual Report
1998In situ layer characterization by spectroscopic ellipsometry at high temperatures
Lehnert, W.; Petrik, P.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Conference Paper
1998In situ spectroscopic ellipsometry for advanced process control in vertical furnaces
Lehnert, W.; Berger, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Stehle, J.L.; Piel, J.-P.; Neumann, W.
Conference Paper
1998Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Book Article
1998Microanalysis of masklessly fabricated microstructures using nuclear microprobe
Park, Y.K.; Takai, M.; Nagai, T.; Kishimoto, T.; Seidl, A.; Lehrer, C.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
1998Microprobe analysis of Pt films deposited by beam induced reaction
Park, Y.K.; Takai, M.; Lehrer, C.; Frey, L.; Ryssel, H.
Journal Article
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1998Neuronale Modellbildung und Temperaturregelung eines Vertikalofens für die Halbleiterfertigung
Benesch, N.; Hofmann, U.; Schneider, C.; Ryssel, H.
Conference Paper
1998Noncontacting measurement of thickness of thin titanium silicide films using spectroscopic ellipsometry
Kal, S.; Kasko, I.; Ryssel, H.
Journal Article
1998Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.
Conference Paper
1998Productronica 97. Proceedings HLF. Semiconductor equipment and materials contamination control and defect reduction
Ryssel, H.; Pfitzner, L.; Trunk, R.
Book
1998R and D in Europe's equipment industry. The role of research institutes
Ryssel, H.; Schneider, C.
Journal Article
1998Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4 H-silicon carbide
Treu, M.; Burte, E.P.; Schörner, R.; Friedrichs, P.; Stephani, D.; Ryssel, H.
Journal Article
1998Surface disorder production during plasma immersion implantation
Lohner, T.; Khanh, N.Q.; Petrik, P.; Biro, L.P.; Fried, M.; Pinter, I.; Lehnert, W.; Frey, L.; Ryssel, H.; Wentnik, D.J.; Gyulai, J.
Conference Paper
1998Thin carbon films as elctrodes for bioelectronic applications
Schnupp, R.; Kühnhold, R.; Temmel, G.; Burte, E.; Ryssel, H.
Journal Article
1998Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article
1998Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
19973D simulation for sub-micron metallization
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article, Conference Paper
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1997Atomistic analysis of the vacancy diffusion mechanism
List, S.; Ryssel, H.
Conference Paper
1997Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis
Kasko, I.; Kal, S.; Ryssel, H.
Conference Paper
1997Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1997Comparison of different methods for the parameter determination of the solar cell's double exponential equation
Gottschalg, R.; Rommel, M.; Infield, D.G.; Ryssel, H.
Conference Paper
1997Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.
Conference Paper
1997Degradation of polymide by implantation with Ar+ ions
Svorcik, V.; Rybka, V.; Hnatowicz, V.; Mieek, I.; Jankovkij, O.; Öchsner, R.; Ryssel, H.
Journal Article
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Journal Article
1997The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors
Mikolajick, T.; Häublein, V.; Ryssel, H.
Journal Article
1997Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Mikolajick, T.
: Ryssel, H. (Prüfer)
Dissertation
1997Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie. Achievements and results. Annual report 1996
: Öchsner, R.; Ryssel, H.
Annual Report
1997In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions
Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Frey, L.; Ryssel, H.
Journal Article
1997Integrated process control for cluster tools using an in-line analytical module
Kasko, I.; Oechsner, R.; Froeschle, B.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Conference Paper
1997Ion implantation into semiconductors
Ryssel, H.
Book Article
1997Kinetics of chemical vapor deposition of titanium nitride
Popovska, N.; Poscher, S.; Tichy, P.; Emig, G.; Ryssel, H.
Conference Paper
1997Metrology and analytics for the optimization of CMP processing
Huber, A.; Erdmann, V.; Zielonka, G.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Rohde, A.
Conference Paper
1997Micromechanical ultrasonic liquid nebulizer
Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H.
Journal Article
1997Modular metrology tools for productivity enhancement in wafer fabs
Schneider, C.; Pfitzner, L.; Ryssel, H.
Conference Paper
1997Monitoring strategies for yield enhancement
Pfitzner, L.; Oechsner, R.; Scheider, C.; Ryssel, H.; Riemer, M.; Treiber, T.; Podewils, M. von
Conference Paper
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1997New method based on atomic force microscopy for in-depth characterization of damage in Si irradiated with 209 MeV Kr
Biro, L.P.; Gyulai, J.; Havancsak, K.; Didyk, A.Y.; Bogen, S.; Frey, L.; Ryssel, H.
Journal Article
1997A novel XPS system for integration into advanced semiconductor equipment for in-line process control
Kasko, I.; Oechsner, R.; Schneider, C.; Pfitzner, L.; Ryssel, H.; Trubitsyn, A.A.; Kratenko, V.I.
Conference Paper
1997Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Journal Article
1997The ph-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition
Mikolajick, T.; Kühnhold, R.; Ryssel, H.
Journal Article
1997Reduction of lateral parasitic current flow by buried recombination layers formed by high-energy implantation of C or O into silicon
Bogen, S.; Herden, M.; Frey, L.; Ryssel, H.
Conference Paper
1997Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1997Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Conference Paper
1997Untersuchung des Einflusses von Gitterleerstellen auf die Sauerstoffpräzipitation in Silicium mit Hilfe der Platindiffusion
Jacob, M.
: Ryssel, H. (Prüfer)
Dissertation
1996Advanced process control system for vertical furnaces
Berger, R.; Schneider, C.; Lehnert, W.; Pfitzner, L.; Ryssel, H.
Book Article
1996The challenge of multi-component, multi-vendor clustertools
Pfitzner, L.; Schneider, C.; Ryssel, H.
Conference Paper
1996Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1996A comparison of focused ion beam and electron beam induced deposition processes
Lipp, S.; Frey, L.; Lehrer, C.; Demm, C.; Pauthner, S.; Ryssel, H.
Conference Paper, Journal Article
1996Entwurf von Vibrationssensoren und Optimierungsanalysen mittels der Methode der finiten Elemente
Thomas, J.; Künhold, R.; Temmel, G.; Ryssel, H.
Conference Paper
1996Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1996Herstellung und Charakterisierung von gebondeten pn- und SOS-Strukturen und Realisierung von Leistungsdioden auf gebondeten n(+)n(-)-Siliciumschichten
Wiget, R.
: Ryssel, H. (Prüfer)
Dissertation
1996Micromechanical ultrasonic liquid nebulizer
Paneva, R.; Temmel, G.; Burte, E.P.; Ryssel, H.
Conference Paper
1996Modification of field emitter array tip shape by focused ion-beam irradiation
Takai, M.; Kishimoto, T.; Yamashita, M.; Morimoto, H.; Yura, S.; Hosono, A.; Okuda, S.; Lipp, S.; Frey, L.; Ryssel, H.
Journal Article
1996Simulation von Implantationsprofilen mit Methoden der Transporttheorie
Barthel, A.
: Ryssel, H. (Prüfer)
Dissertation
1996Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiO(x)) deposition
Lipp, S.; Frey, L.; Lehrer, C.; Frank, B.; Demm, E.; Pauthner, S.; Ryssel, H.
Journal Article
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1996Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
1996Three-dimensional simulation of low-pressure chemical vapour deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
19954 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Conference Paper
19956th International Conference on Simulation of Semiconductor Devices and Processes. SISDEP '95. Proceedings
: Ryssel, H.; Pichler, P.
Conference Proceedings
1995Analysis of contamination - a must for ultraclean technology
Ryssel, H.; Streckfuß, N.; Aderhold, W.; Berger, R.; Falter, T.; Frey, L.
Conference Paper
1995Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1995Analytical modeling of lateral implantation profiles
Lorenz, J.; Ryssel, H.; Wierzbicki, R.J.
Journal Article
1995Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Comparison of retrograde and conventional p-wells in regard latch-up susceptibility
Bogen, S.; Gong, L.; Frey, L.; Ryssel, H.; Körber, K.
Journal Article
1995Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Conference Paper
1995Gitterdeformation in Silicium nach Implantationen von Phosphor
Remmler, M.; Frey, L.; Ryssel, H.
Conference Paper
1995High-dose Ge+ implantation into silicon at elevated substrate temperature
Chen, N.X.; Schork, R.; Ryssel, H.
Journal Article
1995Improved delineation technique for two dimensional dopant profiling
Gong, L.; Petersen, S.; Frey, L.; Ryssel, H.
Journal Article
1995Ion-beam mixed ultra-thin cobalt silicide (CoSi2) films by cobalt sputtering and rapid thermal annealing
Kal, S.; Kasko, I.; Ryssel, H.
Journal Article
1995Local material removal by focused ion beam milling and etching
Lipp, S.; Frey, L.; Franz, G.; Demm, E.; Petersen, S.; Ryssel, H.
Journal Article
1995Local material removal by focused ion beam milling and etching
Lipp, K.; Frey, L.; Franz, G.; Demm, E.; Petersen, S.; Ryssel, H.
Conference Paper
1995Model for the electronic stopping of channeled ions in silicon around the stopping power maximum
Simionescu, A.; Hobler, G.; Bogen, S.; Frey, L.; Ryssel, H.
Journal Article
1995Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs
Bauer, H.; Pichler, P.; Ryssel, H.
Journal Article
1995Nitrogen implanted etch-stop layers in silicon
Paneva, R.; Temmel, G.; Ryssel, H.; Burte, E.P.
Conference Paper
1995On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.
Conference Paper
1995Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.
Journal Article
1995Platinum diffusion at low temperatures
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
1995Preparation and characterization of ultra-thin cobalt silicide for VLSI applications
Kal, S.; Kasko, I.; Ryssel, H.
Journal Article
1995Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon
Bogen, S.; Frey, L.; Herder, M.; Ryssel, H.
Conference Paper
1995Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1995Strain profiles in phosphorus implanted /100/-silicon
Remmler, M.; Frey, L.; Horvath, Z.E.; Ryssel, H.
Conference Paper
1995Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1995Ultrasonic transducer with silicon. A well known material with new applications
Paneva, R.; Temmel, G.; Ryssel, H.
Conference Paper
1994Analytical description of high energy implantation profiles of bordon and phosphorus into crystalline silicon
Gong, L.; Bogen, S.; Frey, L.; Jung, W.; Ryssel, H.
Journal Article
1994Applications of single-beam photothermal analysis
Schork, R.; Krügel, S.; Schneider, C.; Pfitzner, L.; Ryssel, H.
Journal Article
1994Calculation of the transport matrix for the coupled diffusion of dopants and vacancies
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1994Dynamic behavior of arsenic clusters in silicon
Bauer, H.; Pichler, P.; Ryssel, H.
Conference Paper
1994Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Conference Paper
1994Das europäische Mikroelektronikprogramm Jessi auf Erfolgskurs
Ryssel, H.
Journal Article
1994High dose and intense implantation of the multiply charged Al plus n, Ti plus n and C plus n into alfa-iron
Pogrebnjak, A.D.; Bakharev, O.G.; Martynenko, V.A.; Rudenko, V.A.; Brusa, R.; Zecca, A.; Ryssel, H.; Tikhomirov, I.A.; Ryabchikov, A.I.; Öchsner, R.
Journal Article
1994Investigation of the effect of altered defect structure produced by photon assisted the diffusion of As in silicon during thermal anneallagation
Biro, L.P.; Gyulai, J.; Bogen, S.; Frey, L.; Ryssel, H.
Journal Article
1994Ion-beam induced CoSi2 layers - formation and contact properties.
Dehm, C.; Kasko, I.; Ryssel, H.
Journal Article
1994Ion-beam mixing of Co-Si and Co-SiO2 - a comparison between Monte Carlo simulations experiments
Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H.
Journal Article
1994Nuclear microprobe application to semiconductor process development - silicide formation and multi-layered structure
Takai, M.; Katayama, Y.; Lohner, T.; Kinomura, A.; Ryssel, H.; Tsien, P.H.; Satou, M.; Chayahara, A.; Burte, E.P.
Journal Article
1994Observation of local SIMOX layers by microprobe RBS
Kinomura, A.; Horino, Y.; Mokuno, Y.; Chayahara, A.; Kiuchi, M.; Fujii, K.; Takai, M.; Lohner, T.; Ryssel, H.; Schork, R.
Journal Article
1994Reflection approach for the analytical description of light ion implantation into bilayer structures
Wierzbicki, R.J.; Biersack, J.P.; Barthel, A.; Lorenz, J.; Ryssel, H.
Journal Article
1994Simulation of buried layer experiments containing all four dopant species
Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.
Conference Paper
1994Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal
Kal, S.; Kasko, I.; Ryssel, H.
Journal Article
1993Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Conference Paper
1993Contamination control and ultrasensitive chemical analysis
Ryssel, H.; Frey, L.; Streckfuß, N.; Schork, R.; Kroninger, F.; Falter, T.
Journal Article
1993Diffusion and activation of arsenic implanted at high temperature in silicon
Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.
Journal Article
1993Effect of ion-beam mixing temperature on cobalt silicide formation
Kasko, I.; Dehm, C.; Frey, L.; Ryssel, H.
Journal Article
1993Halbleiterfertigungsgeräte und -materialien bilden eine wichtige Voraussetzung für die moderne IC-Herstellung
Ryssel, H.
Journal Article
1993High energy implantation of high10 B and high11 B into -100- silicon in channel and in random
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Improvement of surface properties of polymers by ion implantation
Öchsner, R.; Kluge, A.; Zechel-Malonn, S.; Gong, L.; Ryssel, H.
Journal Article
1993Influence of impurities on ion beam induced TiSi2 formation
Dehm, C.; Raum, B.; Kasko, I.; Ryssel, H.
Journal Article
1993A novel delineation technique for 2D-profiling of dopants in crystalline silicon
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Photon assisted implantation -PAI-
Biro, L.P.; Gyulai, J.; Ryssel, H.; Frey, L.; Kormany, T.; Tuan, N.M.
Journal Article
1993Residual stress during local SIMOX process - Raman measurement and simulation
Seidl, A.; Takai, M.; Sayama, H.; Haramura, K.; Ryssel, H.; Schork, R.; Kato, K.
Journal Article
1992Characterization of metal impurities in silicon-on-insulator material
Frey, L.; Kroninger, F.; Streckfuß, N.; Ryssel, H.
Conference Paper
1992Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects
Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.
Journal Article
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992Ellipsometer zur in-situ-Schichtdickenmessung
Berger, R.; Ryssel, H.; Schneider, C.; Aderhold, W.
Patent
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1992Gold and platinum diffusion. The key to the understanding of intrinsic point defect behaviour in silicon
Zimmermann, H.; Ryssel, H.
Journal Article
1992High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
Frey, L.; Bogen, S.; Gong, L.; Jung, W.; Gyulai, J.; Ryssel, H.
Journal Article
1992In situ measurement for resist thickness control and development endpoint detection
Roeder, G.; Ryssel, H.; Temmel, G.
Conference Paper
1992Influence of low-dose ion-beam mixing on CoSi2 formation
Kasko, I.; Dehm, C.; Ryssel, H.
Conference Paper
1992Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing
Dehm, C.; Kasko, I.; Burte, E.P.; Ryssel, H.
Conference Paper
1992An investigation of vacancy concentrations in bulk silicon
Zimmermann, H.; Ryssel, H.
Conference Paper
1992The modelling of platinum diffusion in silicon under non-equilibrium conditions
Zimmermann, H.; Ryssel, H.
Journal Article
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1992Shallow, titanium-silicided p and n junction formation by triple germanium amorphization
Dehm, C.; Gyulai, J.; Ryssel, H.
Journal Article
1992Simulation of the step coverage for chemical vapor deposited silicon dioxide
Wille, H.; Burte, E.P.; Ryssel, H.
Journal Article
1992Verfahren und Vorrichtung zur Herstellung von Solarelementen mit unterschiedlich stark dotierten Bereichen
Ryssel, H.
Patent
1991Carrier concentration profiles by high-energy boron ion implantation into silicon
Sayama, H.; Takai, M.; Namba, S.; Ryssel, H.
Journal Article
1991Characterization and wear tests of steel surfaces implanted with oxygen, aluminium, and carbon dioxide
Langguth, K.; Kluge, A.; Ryssel, H.
Journal Article, Conference Paper
1991Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing
Burte, E.P.; Min, Y.; Pei-Hsin, T.; Ryssel, H.
Journal Article, Conference Paper
1991Direct determination of point-defect equilibrium concentrations
Zimmermann, H.; Ryssel, H.
Journal Article
1991Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress
Takai, M.; Kato, K.; Namba, S.; Pfannenmüller, U.; Ryssel, H.
Journal Article
1991Formation and contact properties of titanium-silicided shallow junctions
Dehm, C.; Gyulai, J.; Ryssel, H.
Conference Paper
1991Formation of cobalt silicide by ion beam mixing
Burte, E.P.; Min, Y.; Ryssel, H.
Journal Article, Conference Paper
1991Oblique ion implantation into nonplanar targets
Takai, M.; Namba, S.; Ryssel, H.
Journal Article
1991Observation of inverse u-shaped profiles after platinum diffusion in silicon
Zimmermann, H.; Ryssel, H.
Journal Article
1991Radiation-enhanced diffusion during high-temperature ion implantation
Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.
Journal Article
1990Meßtechnik und Analytik für Halbleiterfertigungsgeräte
Eichinger, P.; Pfitzner, L.; Ryssel, H.; Schneider, C.
Conference Paper
1990Sicherheit bei Halbleiterfertigungsgeräten
Streckfuß, N.; Pfitzner, L.; Ryssel, H.; Ryzlewicz, C.
Conference Proceedings
1990Simulation of silicon semiconductor processing
Pichler, P.; Ryssel, H.
Journal Article
1990Trends in practical process simulation.
Pichler, P.; Ryssel, H.
Journal Article
1990Untersuchungen über Regelparameter in einer Lithographiezelle
Pfitzner, L.; Ryssel, H.; Temmel, G.; Zielonka, G.
Conference Paper
1989Chemical and physical processes during the formation of MoSi2 by ion-beam mixing
Möller, W.; Ryssel, H.; Valyi, G.
Journal Article, Conference Paper
1989Entwicklung von Prozessmodulen und in-situ-Meßmethoden für ein Flexibles Fotolithografisches Prozeßzentrum
Temmel, G.; Zielonka, G.; Olbrich, H.; Mann, R.; Pfitzner, L.; Ryssel, H.
Conference Paper
1989A flexible target chamber for a Varian 350 DF implanter
Kluge, A.; Ryssel, H.; Schork, R.
Journal Article, Conference Paper
1989Improvements in simulation at 2d implantation profiles
Gong, L.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Internal process control and automation for semiconductor manufacturing equipment
Pfitzner, L.; Ryssel, H.; Schneider, C.
Conference Paper
1989International process control and automation for semiconductor manufacturing equipment
Pfitzner, L.; Ryssel, H.; Schneider, C.
Conference Paper
1989Ion implantation in single-crystal magnetic ferrite.
Takai, M.; Lu, Y.F.; Minamisono, T.; Namba, S.; Ryssel, H.
Journal Article
1989Ion-beam mixed MoSi2 layers - formation and contract properties
Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G.
Conference Paper
1989One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Conference Paper
1989Prozeßtechnische Aspekte fortschrittlicher Halbleiterfertigungsgeräte
Pfitzner, L.; Ryssel, H.; Schmutz, W.
Journal Article
1989Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
Lorenz, J.; Pelka, J.; Ryssel, H.
Journal Article
1989Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Two-dimensional simulation of ion implantation profiles using a personal computer
Barthel, A.; Lorenz, J.; Ryssel, H.
Journal Article, Conference Paper
1989A versatile ion implanter for material modification
Kluge, A.; Öchsner, R.; Ryssel, H.
Journal Article, Conference Paper
1988A comparison of the wear behavior of Ag, B, C, N, Pb and Sn implanted steels with 1.5 to 1.8 % chromium
Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Proceedings
1988CW argon-laser induced zone-melting recrystallization of thin silicon on oxide.
Ryssel, H.; Götzlich, J.; Steinberger, H.; Qiuxia, X
Journal Article
1988CW argon-laser-induced zone-melting recrystallization of thin silicon on oxide
Ryssel, H.; Götzlich, J.; Qiuxia, X; Steinberger, H.
Journal Article
1988Examination of wear, hardness and friction of N, B, C, Ag, Pb and Sn implanted steels with different chromium content
Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Proceedings
1988The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.
Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G.
Book Article
1988Safety aspects of ion implantation.
Ryssel, H.
Conference Paper
1988Safety consideration for ion implanters.
Hamers, P.; Ryssel, H.
Book Article
1987Adhesive and abrasive wear study of nitrogen implanted steels
Kobs, K.; Dimingen, H.; Leutenecker, R.; Ryssel, H.
Conference Paper
1987Comparison of Monte Carlo simulations and analytical models for the calculation of implantation profiles in multilayer targets
Krueger, W.; Lorenz, J.; Ryssel, H.
Journal Article
1987Enhanced endurance life of sputtered MoSX filsm on steel by ion beam mixing.
Kobs, H.; Dimigen, H.; Hübsch, H.; Tolle, H.J.; Leutenbecker, R.; Ryssel, H.
Journal Article
1987The fabrication and investigation of MoSi2 layers
Valyi, G.; Ryssel, H.; Möller, W.
Conference Paper
1987Ion implantation into non-planar targets - Monto Carlo simulations and analytical models
Krueger, W.; Lorenz, J.; Ryssel, H.
Journal Article
1987Monte Carlo ion implantation and COMPOSITE
Lorenz, J.; Ryssel, H.; Barthel, A.
Conference Paper
1987Prozeßüberwachung bei Halbleiterfertigungsgeräten
Ryssel, H.; Pfitzner, L.
Conference Paper
1987Studie über den Stand der Technik und zukünftige Anforderungen an Fertigungseinrichtungen zur Herstellung von Halbleiterbauelementen unter Berücksichtigung verschiedener Herstellungsverfahren
Aderhold, W.; Frühauf, W.; Herz, R.; Kahlden, T. von; Pfitzner, L.; Ryssel, H.; Sauter, K.-D.; Schmutz, W.; Schraft, R.D.
Study
1986Anforderungen an den Reinraum aus der Sicht der Halbleitertechnologie
Ryssel, H.; Pfitzner, L.
Conference Paper
1986Improved tribilogical properties of sputtered MoSx films by ion beam mixing
Kobs, K.; Dimigen, H.; Huebsch, H.; Tolle, H.J.; Leutenecker, R.; Ryssel, H.
Journal Article
1986Ion implantation models for process simulation. Chapter 2
Ryssel, H.; Biersack, J.P.
Book Article
1986Mikroelektronik und Reinraumtechnik
Ryssel, H.
Conference Paper
1986Models for implantation into multilayer targets
Ryssel, H.; Lorenz, J.; Hoffmann, K.
Journal Article
1986Neue Technologien fuer hoechstintegrierte Schaltkreise
Ryssel, H.
Journal Article
1986Studie ueber den Stand der Technik und zukuenftige Anforderungen an Fertigungseinrichtunen zur Herstellung von Halbleiterbauelementen unter Beruecksichtigungen verschiedener Herstellungsverfahren
Aderhold, W.; Fruehauf, W.; Herz, R.; Kahlden, T. von; Pfitzner, L.; Ryssel, H.; Sauter, K.-D.; Schmutz, W.; Schraft, R.D.
Study
1985COMPOSITE - A complete modelling program of silicon technology
Pelka, J.; Lorenz, J.; Ryssel, H.; Sachs, A.; Seidl, S.; Svoboda, M.
Journal Article
1983Anwendung des Laserausheilens fuer Halbleiterbauelemente
Ryssel, H.; Goetzlich, J.
Journal Article
1983CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations
Goetzlich, J.; Tsien, P.H.; Henghuber, G.; Ryssel, H.
Book Article
1983Implantation and diffusion models for process simulation
Ryssel, H.; Prinke, G.; Hoffmann, K.
Book Article
1983Implantation doping of germanium with Be, Mg, Zn und B-ions
Metzger, M.; Zhang, Z.; Schmiedt, B.; Ryssel, H.
Book Article
1983Ion beam lithography
Ryssel, H.; Haberger, K.
Book Article
1983Laser annealing
Ryssel, H.; Goetzlich, J.
Book Article
1983Simulation of the lithographic properties of ion-beam resists
Haberger, K.; Hoffmann, K.; Forster, M.; Ryssel, H.
Book Article
1983Studies on the lattice position of boron in silicon
Fink, D.; Carstanjen, H.D.; Jahnel, F.; Muller, K.; Ryssel, H.; Osei, A.; Biersack, J.P.
Journal Article
1982Ion beam exposure of resists.
Ryssel, H.; Prinke, G.; Bernt, H.; Haberger, K.; Hoffmann, K.
Journal Article
1982Ion implantation for very large scale integration.
Ryssel, H.
Book Article
1982Ion Implantation.
Ryssel, H.
Book Article
1982Non-electrical measuring techniques.
Eichinger, P.; Ryssel, H.
Book Article
1982Range distributions.
Ryssel, H.
Book Article
1981Annealing of boron-implanted silicon using a CW CO2-laser.
Tsien, P.H.; Tsou, S.C.; Takai, M.; Roeschenthaler, D.; Ramin, M.; Ryssel, H.; Ruge, I.; Wittmaack, K.
Journal Article
1981Arsenic implanted polysilicon layers.
Ryssel, H.; Bleier, M.; Prinke, G.; Haberger, K.; Kranz, H.; Iberl, F.
Journal Article
1981CO2 laser annealing characteristics of high-dose boron and arsenic-implanted silicon.
Tsien, P.H.; Goetzlich, J.; Ryssel, H.; Ruge, I.
Journal Article
1981Description of arsenic and boron profiles implanted into SiO2, Si3N4, and Si using Pearson distributions with four moments.
Jahnel, J.; Ryssel, H.; Prinke, G.; Hoffmann, K.; Mueller, K.; Henkelmann, R.; Biersack, J.P.
Journal Article
1981Ion beam sensitivity of polymer resists.
Ryssel, H.; Haberger, K.; Kranz, H.
Journal Article
1981Nd-YAG laser annealing of arsenic-implanted silicon - dependence upon scanning speed and power density.
Tsien, P.H.; Ryssel, H.; Roeschenthaler, D.; Ruge, I.
Journal Article
1981Nd-YAG laser annealing of arsenic-implanted silicon - Relaxation of metastable concentration by means of CO2-laser irradiation.
Tsien, P.H.; Ryssel, H.; Roeschenthaler, D.; Ruge, I.
Journal Article
1981Nd-YAG laser annealing of gallium-implanted silicon.
Takai, M.; Tsou, S.C.; Tsien, P.H.; Roeschenthaler, D.; Ryssel, H.
Journal Article
1981Resist investigation for ion-beam lithography.
Ryssel, H.; Kranz, H.; Haberger, K.; Bosch, J.
Conference Paper
1981Tapered windows in SiO2, Si3N4, and polysilicon layers by ion implantation.
Goetzlich, G.; Ryssel, H.
Journal Article
1980Verfahren und Vorrichtung zum Dotieren von Halbleitern mittels Ionenimplantation
Ryssel, H.
Patent