Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1998Direct observation of the rotational direction of electron spin precession in semiconductors
Oestreich, M.; Hägele, D.; Schneider, H.C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K.H.; Köhler, K.; Koch, S.W.; Rühle, W.W.
Journal Article
1997Spin flip of excitons in GaAs quantum wells
Snoke, D.W.; Rühle, W.W.; Köhler, K.; Ploog, K.
Journal Article
1996Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon
Vaupel, H.; Thomas, P.; Kühn, O.; May, V.; Maschke, K.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1996Relaxation dynamics of electrons between Landau levels in GaAs
Hannak, R.M.; Rühle, W.W.; Köhler, K.
Journal Article
1995Band-gap renormalization and excitonic effects in tunneling in asymmetric double quantum wells
Tackeuchi, A.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1995Electron g factor in quantum wells determined by spin quantum beats
Hannak, R.M.; Oestreich, M.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1995Time-resolved luminescence of semiconductor heterostructures in high magnetic field
Heberle, A.P.; Haacke, S.; Oestreich, M.; Potemski, M.; Rühle, W.W.; Maan, J.C.; Köhler, K.; Weimann, G.; Queisser, H.-J.
Journal Article
1994Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.
Heberle, A.P.; Zhou, X.Q.; Tackeuchi, A.; Rühle, W.W.; Köhler, K.
Journal Article
1994Direct observation of resonant tunneling dynamics in high magnetic fields
Heberle, A.P.; Oestreich, M.; Haacke, S.; Rühle, W.W.; Maan, J.C.; Köhler, K.
Journal Article
1994Influence of annealing on electron lifetimes in transistor base-layers on GaAs-C
Strauss, U.; Heberle, A.P.; Rühle, W.W.; Tews, H.; Lauterbach, T.; Bachem, K.H.
Conference Paper
1993Auger recombination in intrinsic GaAs
Strauss, U.; Rühle, W.W.; Köhler, K.
Journal Article
1992Resonances in tunnelling between quantum wells
Heberle, A.P.; Rühle, W.W.; Alexander, M.G.W.; Köhler, K.
Journal Article
1992Resonant electron and hole tunneling between GaAs quantum wells
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U.
Conference Paper
1992Tunneling between quantum wells.
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Tunneling through single AlGaAs barriers
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1991Hole-tunneling dynamics in biased GaAs/Al(0.35)Ga(0.65)As asymmetric double quantum wells
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Köhler, K.
Journal Article
1991Resonant and nonresonant tunneling in GaAs/AlxGa1-xAs asymmetric double quantum wells.
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.
Journal Article
1991Time-resolved optical investigation of tunneling of carriers through single AlxGa1-xAs barriers
Rühle, W.W.; Heberle, A.P.; Alexander, M.G.W.; Nido, M.; Köhler, K.
Journal Article
1990Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Reimann, K.; Ploog, K.; Köhler, K.
Journal Article
1990Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells.
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Schweizer, T.; Köhler, K.
Journal Article
1990Nonthermal occupation of higher subbands in semiconductor superlattices via sequential resonant tunneling
Grahn, H.T.; Rühle, W.W.; Klitzing, K. von; Ploog, K.; Schneider, H.
Journal Article
1990Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.
Journal Article
1989Gamma- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells.
Alexander, M.G.W.; Nido, M.; Reimann, K.; Rühle, W.W.; Köhler, K.
Journal Article
1989Tunneling between two quantum wells - In0.35Ga0.47As/InP versus GaAs/Al0.35Ga0.65As.
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Sauer, R.; Köhler, K.; Tsang, W.T.
Journal Article