Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Journal Article
2019Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.
Journal Article
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2019Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L.
Conference Paper
2017Novel advanced analytical design tool for 4H-SiC VDMOSFET devices
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2016A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Liguori, R.; Rubino, Alfredo
Journal Article
2016Optimized design for 4H-SiC power DMOSFETs
Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo
Journal Article