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| 2019 | Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
Stockmeier, Ludwig; Kranert, Christian; Fischer, Peter; Epelbaum, Boris; Reimann, Christian; Friedrich, Jochen; Raming, Georg; Miller, Alfred | Journal Article |
| 2019 | Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications
Friedrich, J.; Jung, T.; Trempa, M.; Reimann, C.; Denisov, A.; Muehe, A. | Journal Article |
| 2019 | Corrigendum to "Particle engulfment dynamics under oscillating crystal growth conditions" [J. Crystal Growth 468 (2017) 24-27]
Tao, Y.; Sorgenfrei, T.; Jauß, T.; Cröll, A.; Reimann, C.; Friedrich, J.; Derby, J.J. | Journal Article |
| 2019 | Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots
Trempa, M.; Kranert, C.; Kupka, I.; Reimann, C.; Friedrich, J. | Journal Article |
| 2019 | Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles
Schwanke, S.; Trempa, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Friedrich, J. | Journal Article |
| 2019 | Thermoelectric properties of silicon and recycled silicon sawing waste
He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G. | Journal Article |
| 2018 | Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method
Stockmeier, Ludwig; Kranert, Christian; Raming, Georg; Miller, Alfred; Reimann, Christian; Rudolph, Peter; Friedrich, Jochen | Journal Article |
| 2017 | Dislocation formation in heavily As-doped Czochralski grown silicon
Stockmeier, Ludwig; Lehmann, Lothar; Miller, Alfred; Reimann, Christian; Friedrich, Jochen | Journal Article, Conference Paper |
| 2017 | Dynamic Modeling of Critical Velocities for the Pushing/Engulfment Transition in the Si-SiC System Under Gravity Conditions
Kundin, J.; Aufgebauer, H.; Reimann, C.; Seebeck, J.; Friedrich, J.; Jauss, T.; Sorgenfrei, T.; Croell, A. | Journal Article |
| 2017 | Engulfment and pushing of Si3N4 and SiC particles during directional solidification of silicon under microgravity conditions
Friedrich, J.; Reimann, C.; Jauss, T.; Cröll, A.; Sorgenfrei, T.; Tao, Y.; Derby, J.J. | Journal Article |
| 2017 | Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots
Trempa, M.; Kupka, I.; Kranert, C.; Lehmann, T.; Reimann, C.; Friedrich, J. | Journal Article |
| 2017 | Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots
Kupka, I.; Lehmann, T.; Trempa, M.; Kranert, C.; Reimann, C.; Friedrich, J. | Journal Article |
| 2017 | Particle engulfment dynamics under oscillating crystal growth conditions
Tao, Y.; Sorgenfrei, T.; Jauß, T.; Cröll, A.; Reimann, C.; Friedrich, J.; Derby, J.J. | Journal Article |
| 2017 | A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth
Derby, J.J.; Tao, Y.; Reimann, C.; Friedrich, J.; Jauß, T.; Sorgenfrei, T.; Cröll, A. | Journal Article |
| 2017 | Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot
Schneider, Veronika; Reimann, Christian; Friedrich, Jochen; Sans, Jürgen; Kuczynski, Maciej | Patent |
| 2016 | Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation
Lehmann, T.; Reimann, C.; Meissner, E.; Friedrich, J. | Journal Article |
| 2016 | Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots
Trempa, M.; Beier, M.; Reimann, C.; Roßhirth, K.; Friedrich, J.; Löbel, C.; Sylla, L.; Richter, T. | Journal Article |
| 2016 | Influence of different seed materials on multi-crystalline silicon ingot properties
Reimann, C.; Trempa, M.; Lehmann, T.; Rosshirt, K.; Stenzenberger, J.; Friedrich, J.; Hesse, K.; Dornberger, E. | Journal Article |
| 2016 | Interaction of SiC particles with moving solid-liquid interface during directional solidification of silicon
Friedrich, J.; Reimann, C.; Jauss, T.; Cröll, A.; Sorgenfrei, T. | Journal Article |
| 2016 | Nitride bonded silicon nitride as a reusable crucible material for directional solidification of silicon
Schneider, V.; Reimann, C.; Friedrich, J.; Müller, G. | Journal Article |
| 2016 | Phase-field simulations of particle capture during the directional solidification of silicon
Aufgebauer, H.; Kundin, J.; Emmerich, H.; Azizi, M.; Reimann, C.; Friedrich, J.; Jauß, T.; Sorgenfrei, T.; Cröll, A. | Journal Article |
| 2016 | Wetting and infiltration of nitride bonded silicon nitride by liquid silicon
Schneider, V.; Reimann, C.; Friedrich, J. | Journal Article |
| 2015 | Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T. | Journal Article |
| 2015 | Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Sylla, L.; Krause, A.; Richter, T. | Journal Article |
| 2015 | Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon
Reimann, C.; Friedrich, J.; Meissner, E.; Oriwol, D.; Sylla, L. | Journal Article |
| 2014 | Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T. | Journal Article |
| 2014 | Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale
Lehmann, T.; Trempa, M.; Meissner, E.; Zschorsch, M.; Reimann, C.; Friedrich, J. | Journal Article |
| 2014 | Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods
Stockmeier, L.; Müller, G.; Seidl, A.; Lehmann, T.; Reimann, C.; Friedrich, J. | Journal Article |
| 2014 | Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung in einem Tiegel
Friedrich, Jochen; Reimann, Christian; Wunderwald, Ulrike | Patent |
| 2014 | Verfahren zur Behandlung und/oder Recycling von Säge-Slurries
Azizi, Maral; Reimann, Christian; Friedrich, Jochen; Blankenburg, Hans-Joachim; Colditz, Rainer | Patent |
| 2014 | Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nicht-Eisen Metallen sowie Verwendungszwecke
Reimann, Christian; Obermeier, Sebastian; Trempa, Matthias; Schneider, Veronika; Friedrich, Jochen | Patent |
| 2013 | Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon
Karzel, P.; Ackermann, M.; Gröner, L.; Reimann, C.; Zschorsch, M.; Meyer, S.; Kiessling, F.; Riepe, S.; Hahn, G. | Journal Article |
| 2013 | Hydrogen passivation and phosphorous gettering at different grain boundary types in multicrystalline silicon
Karzel, P.; Ackermann, M.; Gröner, L.; Reimann, C.; Zschorsch, M.; Meyer, S.; Hahn, G. | Conference Paper |
| 2012 | Aufreinigung eines Tiegels für eine Halbleiterverarbeitung
Schneider, Veronika; Reimann, Christian; Friedrich, J. | Patent |
| 2012 | Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Oriwol, D. | Journal Article |
| 2012 | Systematic characterization of multi-crystalline silicon String Ribbon wafer
Reimann, C.; Müller, G.; Friedrich, J.; Lauer, K.; Simonis, A.; Wätzig, H.; Krehan, S.; Hartmann, R.; Kruse, A. | Journal Article |
| 2012 | Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik sowie dessen Verwendung bei der Herstellung eines mono- oder multikristallinen Halbmetallkörpers aus einer Schmelze
Mono, T.; Schneider, Veronika; Martin, R.; Reimann, Christian; Friedrich, J. | Patent |
| 2011 | DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS
Freudenberg, Bernhard; Hollatz, Mark; Trempa, Matthias; Reimann, Christian; Friedrich, Jochen | Patent |
| 2011 | Device for producing silicon blocks, comprises vessel, which is provided to receive silicon melt and has bottom, inner side, outer side and middle-longitudinal axis, supporting plate, and unit for generating inhomogeneous temperature field
Freudenberg, B.; Radel, G.; Trempa, M.; Dadzis, K.; Dietrich, M.; Nauert, D.; Proske, S.; Reimann, C.; Friedrich, J. | Patent |
| 2011 | Device useful for producing silicon blocks, comprises a container for receiving a silicon melt with a base, an inner side, an outer side and a central longitudinal axis
Radel, G.; Nauert, D.; Trempa, M.; Dadzis, K.; Dietrich, M.; Proske, S.; Reimann, C.; Friedrich, J.; Freudenberg, B. | Patent |
| 2010 | About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
Reimann, C.; Trempa, M.; Friedrich, J.; Müller, G. | Journal Article |
| 2010 | Einbau von O, N und C bei der gerichteten Erstarrrung von multikristallinem Silicium für die Photovoltaik
Reimann, C. | Dissertation |
| 2010 | The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G. | Journal Article |
| 2010 | Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters
Reimann, C.; Trempa, M.; Jung, T.; Friedrich, J.; Müller, G. | Journal Article |
| 2008 | The importance of convective heat and mass transfer for controlling material properties in ingot casting of multi-crystalline-silicon for photovoltaic applications
Reimann, C.; Jung, T.; Friedrich, J.; Müller, G. | Conference Paper |
| 2008 | Modeling of convective eeat and mass transfer processes in crystal growth of silicon for photovoltaic applications
Reimann, C.; Jung, T.; Trempa, M.; Friedrich, J. | Conference Paper |
| 2007 | Analysis of the formation of SiC and Si3N4 precipitates during directional solidification of multicrystalline silicon for solar cells
Reimann, C.; Friedrich, J.; Müller, G.; Würzner, S.; Möller, H.J. | Conference Paper |
| 2002 | AMIRE - authoring mixed reality
Grimm, P.; Haller, M.; Reimann, C.; Paelke, V.; Zauner, J.; Reinhold, S. | Conference Paper |