Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Nano-diamond vacuum MEMS for RF applications
Heidrich, N.; Hees, J.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Conference Paper
2013Piezoelectrically actuated diamond cantilevers for high-frequency applications
Heidrich, N.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article
2012Electrostatically coupled vibration modes in unimorph complementary mircocantilevers
Lebedev, V.; Heidrich, N.; Knöbber, F.; Sah, R.E.; Pletschen, W.; Raynor, B.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.
Journal Article
2011Nanocrystalline diamond nanoelectrode arrays and ensembles
Hees, J.J.; Hoffmann, R.; Kriele, A.; Smirnov, W.; Obloh, H.; Glorer, K.; Raynor, B.; Driad, R.; Yang, N.; Williams, O.A.; Nebel, C.E.
Journal Article
2008High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G.
Journal Article
2007Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2007Remote sensing of explosives using mid-infrared quantum cascade lasers
Fuchs, F.; Wild, C.; Rahmouni, Y.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Conference Paper
2006Distributed-feedback GaInAs/AIAsSb quantum-cascade lasers operating at 300 K
Yang, Q.K.; Bronner, W.; Manz, C.; Raynor, B.; Menner, H.; Mann, C.; Köhler, K.; Wagner, J.
Journal Article
2006Spectral tuning and mode competition in quantum cascade lasers studied by time-resolved Fourier transform spectroscopy
Fuchs, F.; Kirn, B.; Mann, C.; Yang, Q.K.; Bronner, W.; Raynor, B.; Köhler, K.; Wagner, J.
Conference Paper
2005A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Journal Article
2003Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G.
Journal Article
2003High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
Aniel, F.; Enciso-Aguilar, M.; Giguerre, L.; Crozat, P.; Adde, R.; Mack, T.; Seiler, U.; Hackbarth, T.; Herzog, H.J.; König, U.; Raynor, B.
Journal Article
200258-82 GHz 4:1 dynamic frequency divider using 100nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Raynor, B.; Schlechtweg, M.
Journal Article
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Conference Paper
199940 Gbit/s/GHz clock recovery and frequency multiplying AlGaAs/GaAs-HEMT-IC using injection-synchronised narrowband ring-VCOs and auxiliary PLLs
Wang, Z.-G.; Thiede, A.; Schlechtweg, M.; Lienhart, H.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T.
Journal Article
199820-Gb/s 14-k ohm transimpedance long-wavelength MSM-HEMT photoreceiver OEIC
Lao, Z.; Hurm, V.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
199840 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T.
Journal Article
199840 Gbit/s 1.55 mu m monolithic integrated GaAs-based PIN-HEMT photoreceiver
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Conference Paper
199840 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
Hurm, V.; Benz, W.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Köhler, K.; Leven, A.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.
Journal Article
1998Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Journal Article
199710 Gb/s single-chip data regeneration with an injection
Wang, Z.-G.; Thiede, A.; Rieger-Motzer, M.; Hülsmann, A.; Raynor, B.; Schneider, J.; Jakobus, T.; Schlechtweg, M.
Conference Paper
199710 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
199720 Gbit/s long wavelength monolithic integrated photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Windscheif, J.
Journal Article
199720-40 Gb/s 0.2-mu m GaAs HEMT chip set for optical data receiver
Lang, M.; Wang, Z.-G.; Lao, Z.; Schlechtweg, M.; Thiede, A.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Raynor, B.
Journal Article
199735-GHz static and 48-GHz dynamic frequency divider IC's using 0.2-mu m AlGaAs/GaAs-HEMT's
Lao, Z.; Bronner, W.; Thiede, A.; Schlechtweg, M.; Hülsmann, A.; Rieger-Motzer, M.; Kaufel, G.; Raynor, B.; Sedler, M.
Journal Article
199740 GHz monolithically-integrated fully-balanced VCO using 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Jakobus, T.; Hülsmann, A.; Köhler, K.; Raynor, B.
Journal Article
1997A completely integrated single-chip PLL with a 34 GHz VCO using 0.2 mu m E-/D-HEMT-technology
Lang, M.; Leber, P.; Wang, Z.-G.; Lao, Z.; Rieger-Motzer, M.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Raynor, B.
Conference Paper
1997Experimental results of on-chip center-tapped microwave transformers
Wang, Z.-G.; Berroth, M.; Bosch, R.; Raynor, B.; Rieger-Motzer, M.
Conference Paper
1997GaAs HEMT ICs for 40 Gbit/s data transmission systems
Lang, M.; Nowotny, U.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1997HEMT circuits for signal/data processing
Berroth, M.; Hurm, V.; Lang, M.; Lao, Z.; Thiede, A.; Wang, Z.-G.; Bangert, A.; Bronner, W.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Jakobus, T.
Journal Article
1997High-speed long-wavelength monolithic integrated photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Windscheif, J.
Conference Paper
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1997Low-power 20 Gbit/s data decision and 17 GHz static frequency divider ICs with 1.5 V supply voltage
Lao, Z.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Kaufel, G.; Seibel, J.; Bronner, W.; Hülsmann, A.; Schneider, J.; Raynor, B.
Journal Article
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Conference Paper
1997Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Bushehri, E.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Hornung, J.; Kaufel, G.; Raynor, B.; Schneider, J.
Journal Article
199610 and 20 Gbit/s clock recovery GaAs IC with 288 deg phase-shifting function
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
199610 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.
Journal Article
199620 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver
Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Ludwig, M.; Olander, E.; Raynor, B.; Rosenzweig, J.
Journal Article
199631 GHz static and 39 GHz dynamic frequency divider ICs using 0,2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Rieger-Motzer, M.; Thiede, A.; Hurm, V.; Sedler, M.; Bronner, W.; Hülsmann, A.; Raynor, B.
Conference Paper
199640 and 20 Gbit/s monolithic integrated clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1996AlInAs/GaInAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison
Fink, T.; Haupt, M.; Köhler, K.; Raynor, B.; Braunstein, J.; Massler, H.; Tasker, P.J.
Conference Paper
1996Circuit techniques for 10 and 20 Gb/s clock recovery using a fully balanced narrowband regenerative frequency divider with 0.3 mu m HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.; Briggmann, D.
Conference Paper
1996Low power data decision IC for 20-40 Gbit/s data links using 0.2 mu m AlGaAs/GaAs HEMTs
Wang, Z.-G.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1996A monolithic 24.9 GHz limiting amplifier using 0.2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Rieger-Motzer, M.; Thiede, A.; Bronner, W.; Hülsmann, A.; Raynor, B.
Conference Paper
1996W-band MMIC VCO with a large tuning range using a pseudomorphic HFET
Bangert, A.; Schlechtweg, M.; Lang, M.; Haydl, W.; Bronner, W.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
19951.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Journal Article
199510 Gbit/s monolithic optoelectronic integrated receiver with clock recovery, data decision and 1:4 demultipexer
Wang, Z.-G.; Hurm, V.; Lang, M.; Berroth, M.; Ludwig, M.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
199517 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.; Wang, Z.-G.
Journal Article
199517 GHz-bandwidth 17dB-gain 0.3 micrometer-HEMT low power limiting amplifier
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199530 GHz static frequency divider using a 0.2 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.
Journal Article
1995Monolithic integration of 1.3-mym InGaAs photodetectors and HEMT electronic circuits on GaAs
Fink, T.; Hurm, V.; Raynor, B.; Köhler, K.; Benz, W.; Ludwig, M.
Conference Paper
1995Single-chip 4 bit 35 GHz phase-shifting receiver with a Gb/s digital interface circuitry
Wang, Z.-G.; Berroth, M.; Thiede, A.; Schlechtweg, M.; Sedler, M.; Seibel, J.; Rieger-Motzer, M.; Raynor, B.; Bronner, W.; Fink, T.; Huder, B.; Rittmayer, R.; Schroth, J.
Conference Paper
19940.15 mym T-gate e-beam lithography using crosslinked P/MMA/MAA developed in ortho-xylene resulting in high contrast and high plasma stability for dry etched recess gate pseudomorphic MODFETs for MMIC production
Hülsmann, A.; Mühlfriedel, E.; Raynor, B.; Glorer, K.; Bronner, W.; Köhler, K.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Journal Article
19941.3 mym monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Conference Paper
199419 GHz monolithic integrated clock recovery using PLL and 0.3 mym gate-length quantum-well HEMTs.
Wang, Z.-G.; Berroth, M.; Seibel, J.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199420 Gb/s monolithic integrated clock recovery and data decision
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3 micro-meter gate length well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1994An 800 MSps Track and hold using a 0.3 µm AlGaAs-HEMT-technology
Rohmer, G.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.; Sauerer, J.
Conference Paper
1994Enhanced CAIBE for high-speed OEICs
Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B.
Journal Article
1994Fabrication of high speed MMICs and digital ICs using T-gate technology on pseudomorphic-HEMT structures
Hülsmann, A.; Bronner, W.; Hofmann, P.; Köhler, K.; Raynor, B.; Schneider, J.; Braunstein, J.; Schlechtweg, M.; Tasker, P.J.; Thiede, A.; Jakobus, T.
Conference Paper
1994Process technology for InGaAs/InAlAs modulation doped field effect transistors on InP substrates
Fink, T.; Raynor, B.; Haupt, M.; Köhler, K.; Braunstein, J.; Hornung, J.; Grün, N.
Journal Article
1994Voltage dependence of the optical response of a pseudomorphic HFET-photodetector
Bangert, A.; Rosenzweig, J.; Bosch, R.; Bronner, W.; Köhler, K.; Raynor, B.
Conference Paper
199314 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver.
Hurm, V.; Ludwig, M.; Rosenzweig, J.; Benz, W.; Berroth, M.; Bosch, R.; Bronner, W.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993A 3.6 Gigasample/s 5 bit analog to digital converter using 0.3 mu m AlGaAs-HEMT technology
Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.
Conference Paper
19937.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Hornung, J.; Wang, Z.-G.; Bronner, W.; Olander, E.; Köhler, K.; Ganser, P.; Raynor, B.; Benz, W.; Ludwig, M.
Journal Article
19937.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 mym gate length quantum well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993Digital dynamic frequency dividers for broad band application up to 60 GHz.
Thiede, A.; Berroth, M.; Tasker, P.J.; Schlechtweg, M.; Seibel, J.; Raynor, B.; Hülsmann, A.; Köhler, K.; Bronner, W.
Conference Paper
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Ludwig, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1993Stability of an AlGaAs/GaAs/AlGaAsE/D-HEMT process with double pulse doping
Jakobus, T.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Landsberg, B.; Raynor, B.; Schneider, J.; Grün, N.; Windscheif, J.; Berroth, M.; Hornung, J.
Conference Paper
199210-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Hurm, V.; Lang, M.; Ludwig, G.; Hülsmann, A.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wang, Z.-G.; Wennekers, P.
Conference Paper
199210-Gb/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs technology.
Hülsmann, A.; Schneider, J.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wennekers, P.
Journal Article
199215 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.
Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Wang, Z.-G.
Journal Article
199216 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J.
Journal Article
199218 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.
Nowotny, U.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Wang, Z.-G.
Journal Article
1992Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology.
Reinert, W.; Hülsmann, A.; Schneider, J.; Bosch, R.; Kaufel, G.; Köhler, K.; Raynor, B.; Wennekers, P.
Journal Article
1992Mushroom shaped gates in a dry etched recessed gate process
Kaufel, G.; Hülsmann, A.; Raynor, B.; Hofmann, P.; Schneider, J.; Hornung, J.; Jakobus, T.; Berroth, M.; Köhler, K.
Conference Paper
199110 Gbit/s bit-synchronizer with automatic retiming clock alignement using Quantum Well AlGaAs/GaAs/AlGaAs technology
Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.; Wennekers, P.
Conference Paper
199110 Gbit/s low-power bit synchroniser with automatic retiming phase alignment.
Wennekers, P.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.
Journal Article
199110 Gbit/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver.
Hurm, V.; Ludwig, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Rosenzweig, J.
Conference Paper
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199114 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology.
Wennekers, P.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.
Journal Article
1991A 2.5 ns 8x8-b parallel multiplier using 0.5 mym GaAs/GaAlAs heterostructure field effect transistors
Hurm, V.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
199120 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Lang, M.; Hurm, V.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
19918.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Benz, W.; Huelsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
1991GaAs/AlGaAs HEMT's with sub 0.5 mym gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic -DCFL-
Hülsmann, A.; Kaufel, G.; Raynor, B.; Glorer, K.H.; Olander, E.; Weismann, B.; Schneider, J.; Jakobus, T.; Koehler, K.
Conference Paper
1991Mushroom shaped gates defined by e-beam lithography down to 80 nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess.
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schweizer, T.; Braunstein, J.; Schlechtweg, M.; Tasker, P.; Jakobus, T.; Köhler, K.
Conference Paper
1990E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Köhler, K.
Journal Article