Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Advances of MOEMS-based external cavity QCLs
Härtelt, Marko; Hugger, Stefan; Butschek, Lorenz; Schilling, Christian; Merten, André; Schwarzenberg, Markus; Dreyhaupt, André; Grahmann, Jan; Rattunde, Marcel; Ostendorf, Ralf
Conference Paper
2018100 W-level peak power laser system tunable in the LWIR applied to detection of persistent chemical agents
Gutty, Francois; Grisard, Arnaud; Larat, Christian; Papillon, Dominique; Schwarz, Muriel; Lallier, Eric; Tholl, Hans Dieter; Münzhuber, Franz; Kunz, Jürgen; Raab, Michael; Rattunde, Marcel; Hugger, Stefan; Kastek, Mariusz; Piatkowski, Tadeusz; Brygo, François; Awanzino, Cédric; Wilsenack, Frank
Conference Paper
2018First results of a QCL-OPA based standoff system, for detecting hazardous substances in the IR-fingerprint domain
Wilsenack, Frank; Lorenzen, Arne; Brygo, François; Awanzino, Cédric; Gutty, Francois; Grisard, Arnaud; Larat, Christian; Papillon, Dominique; Schwarz, Muriel; Lallier, Eric; Tholl, Hans Dieter; Münzhuber, Franz; Kunz, Jürgen; Raab, Michael; Rattunde, Marcel; Hugger, Stefan; Kastek, Mariusz; Piatkowski, Tadeusz
Conference Paper
2018Robot-assisted laser tissue soldering system
Basov, Svetlana; Milstein, Amit; Sulimani, Erez; Platkov, Max; Peretz, Eli; Rattunde, Marcel; Wagner, Joachim; Netz, Uri; Katzir, Abraham; Nisky, Ilana
Journal Article
2017100 W-level peak-power laser system tunable from 8 to 10 μm
Gutty, Francois; Grisard, Arnaud; Larat, Christian; Papillon, Dominique; Schwarz, Muriel; Gerard, Bruno; Ostendorf, Ralf; Rattunde, Marcel; Wagner, Joachim; Lallier, Eric
Conference Paper
2017140 W peak power laser system tunable in the LWIR
Gutty, F.; Grisard, A.; Larat, C.; Papillon, D.; Schwarz, M.; Gerard, B.; Ostendorf, R.; Rattunde, M.; Wagner, J.; Lallier, E.
Journal Article
2017Active multispectral reflection fingerprinting of persistent chemical agents
Tholl, H.D.; Münzhuber, Franz; Kunz, J.; Raab, M.; Rattunde, Marcel; Hugger, Stefan; Gutty, Francois; Grisard, A.; Larat, C.; Papillon, D.; Schwarz, M.; Lallier, E.; Kastek, M.; Piatkowski, T.; Brygo, F.; Awanzino, C.; Wilsenack, F.; Lorenzen, A.
Conference Paper
2017Advances in power and tunability for GaSb-VECSELs
Holl, Peter; Rattunde, Marcel
Journal Article
2017Compact 2.1 μm Q-switched Ho:YAG laser intra-cavity pumped by a 2 μm OPSDL
Scholle, Karsten; Lamrini, Samir; Adler, Steffen; Holl, Peter; Diwo-Emmer, Elke; Rattunde, Marcel; Fuhrberg, Peter
Conference Paper
2017Continuous-tunable single-frequency 2 μm GaSb-based thin device semiconductor disk laser
Adler, Steffen; Holl, Peter; Lindner, Chiara; Diwo-Emmer, Elke; Bächle, Andreas; Aidam, Rolf; Göhlich, Oliver; Bronner, Wolfgang; Rattunde, Marcel
Conference Paper
2017GaSb-based VECSEL for high-power applications and Ho-pumping
Holl, Peter; Rattunde, Marcel; Adler, Steffen; Scholle, Karsten; Lamrini, Samir; Fuhrberg, Peter; Diwo-Emmer, Elke; Aidam, Rolf; Bronner, Wolfgang; Wagner, Joachim
Conference Paper
2017Halbleiter-Scheibenlaser und ihre Integration in anwendungsspezifische Resonatoren
Holl, Peter
: Wagner, Joachim (Referent); Reiter, Günter (Referent); Rattunde, Marcel (Betreuer)
Dissertation
2017Hyperspectral imaging for standoff trace detection of explosives using quantum cascade lasers
Fuchs, F.; Hugger, S.; Jarvis, J.P.; Härtelt, M.; Yang, Q.K.K.; Rattunde, M.; Ostendorf, R.; Schilling, C.; Driad, R.; Aidam, R.; Wagner, J.
Conference Paper
2017Real-time spectroscopy enabled by external cavity QCLs with MOEMS diffraction gratings
Butschek, Lorenz; Hugger, Stefan; Jarvis, Jan-Philip; Härtelt, Marko; Merten, André; Grahmann, Jan; Boskovic, Dusan; Fuchs, Frank; Ostendorf, Ralf; Schilling, Christian; Rattunde, Marcel; Wagner, Joachim
Conference Paper
2016Closure of incisions in cataract surgery in-vivo using a temperature controlled laser soldering system based on a 1.9µm semiconductor laser
Gabay, I.; Basov, S.; Varssano, D.; Barequet, I.; Rosner, M.; Rattunde, M.; Wagner, J.; Platkov, M.; Harlev, M.; Rossmann, U.; Katzir, A.
Conference Paper
2016GaSb-based 2.0 µm SDL with 17 W output power at 20°C
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Wagner, J.
Journal Article
2016MOEMS EC-QCL for real-time identification of chemical compounds
Ostendorf, R.; Butschek, L.; Merten, A.; Dreyhaupt, A.; Grahmann, J.; Rattunde, M.; Jarvis, J.; Härtelt, M.; Hugger, S.; Fuchs, F.; Wagner, J.
Conference Paper
2016Optimization of 2.5 μm VECSEL: Influence of the QW active region
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2016Quantum cascade laser based active hyperspectral imaging for standoff detection of chemicals on surfaces
Hugger, Stefan; Fuchs, Frank; Jarvis, J.P.; Yang, Q.K.; Rattunde, M.; Ostendorf, R.; Schilling, C.; Draid, R.; Bronner, W.; Aidam, R.; Wagner, J.; Tybussek, Thorsten; Rieblinger, Klaus
Conference Paper
2016Recent advances and applications of external Cavity-QCLs towards hyperspectral imaging for standoff detection and real-time spectroscopic sensing of chemicals
Ostendorf, R.; Butschek, L.; Hugger, S.; Fuchs, F.; Yang, Q.; Jarvis, J.; Schilling, C.; Rattunde, M.; Merten, A.; Grahmann, J.; Boskovic, D.; Tybussek, T.; Rieblinger, K.; Wagner, J.
Journal Article
2016SDL in-band pumped Q-switched 2.1 µm Ho:YAG laser
Scholle, K.; Lamrini, S.; Adler, S.; Holl, P.; Diwo, E.; Rattunde, M.; Fuhrberg, P.
Conference Paper
2015GaSb-based 2µm semiconductor disk laser: Power scaling for optical pumping of Ho:YAG
Holl, P.; Rattunde, M.; Adler, S.; Kaspar, S.; Bronner, W.; Bächle, A.; Aidam, R.; Wagner, J.; Scholle, K.; Lamrini, S.; Fuhrberg, P.
Conference Paper
2015Less heat - more power
Rattunde, M.; Berndt, M.
Journal Article
2015Mikroelektromechanisches System zum Durchstimmen von Lasern
Schenk, Harald; Grahmann, Jan; Wagner, Joachim; Ostendorf, Ralf; Rattunde, Marcel
Patent
2015Optisch gepumpter Halbleiter-Scheibenlaser
Töpper, Tino; Rattunde, Marcel; Kaspar, Sebastian; Wagner, Joachim
Patent
2015Recent advances in power scaling of GaSb-based semiconductor disk lasers
Holl, Peter; Rattunde, Marcel; Adler, Steffen; Kaspar, S.; Bronner, Wolfgang; Bächle, Andreas; Aidam, Rolf; Wagner, Joachim
Journal Article
20142-µm high-brilliance micro-cavity VECSEL with >2W output power
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
Conference Paper
2014Less heat - more power
Rattunde, M.; Berndt, M.
Journal Article
2013 Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser
Kaspar, S.; Rattunde, M.; Adler, S.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Conference Paper
201330 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2013High-performance 2.X micron semiconductor disk lasers
Rattunde, M.; Kaspar, S.; Adler, S.; Holl, P.; Bächle, A.; Manz, C.; Wagner, J.
Conference Paper
2013Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Multi-wavelength and multi-band infrared semiconductor lasers
Ostendorf, R.; Hugger, S.; Rattunde, M.; Schilling, C.; Kaspar, S.; Aidam, R.; Baechle, A.; Manz, C.; Driad, R.; Fuchs, F.; Wagner, J.
Conference Paper
2013Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Electro-optically cavity dumped 2 µm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission
Rattunde, Marcel; Kaspar, S.; Töpper, T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Conference Paper
2012GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.
Conference Paper
2012High-power 2.0 µm semiconductor disk laser-influence of lateral lasing
Töpper, T.; Rattunde, Marcel; Kaspar, S.; Moser, R.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Journal Article
2012Semiconductor disk laser at 2.05 µm wavelength with <100 kHz linewidth at 1 W output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Conference Paper
2012Single-frequency kHz-linewidth 2-m GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Thermal effects in 2.x µm vertical-external-cavity-surface-emitting lasers
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Journal Article
20112 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
20112µm semiconductor disk laser technology
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2011Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2011Narrow linewidth 2 µm GaSb-based semiconductor disk laser
Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Abstract
2011Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
201020W, quasi-cw GaSb-based semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Rösener, B.; Rattunde, M.; Wagner, J.; Burns, D.
Conference Paper
2010GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010Long-wavelength GaSb disk lasers
Rösener, B.; Rattunde, M.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Book Article
2010Mid-infrared high-power diode lasers and modules
Kelemen, M.T.; Gilly, J.; Rattunde, M.; Wagner, J.; Ahlert, S.; Biesenbach, J.
Conference Paper
2010Mid-infrared semiconductor lasers for power projection and sensing
Tholl, H.D.; Wagner, J.; Rattunde, M.; Hugger, S.; Fuchs, F.
Conference Paper
2010Toward 3 micron wavelength semiconductor disk lasers
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K.
Journal Article
2009Continuous-wave, room-temperature operation of 2-µm Sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates
Rotter, T.J.; Tatebayashi, J.; Senanayake, P.; Balakrishnan, G.; Rattunde, M.; Wagner, J.; Hader, J.; Moloney, J.V.; Koch, S.W.; Dawson, L.R.; Huffaker, D.L.
Journal Article
2009Diode laser arrays for 1.8 to 2.3 µm wavelength range
Kelemen, M.T.; Gilly, J.; Haag, M.; Biesenbach, J.; Rattunde, M.; Wagner, J.
Conference Paper
2009Diode laser arrays for 1.8 to 2.3 µm wavelength range
Kelemen, M.T.; Gilly, J.; Ahlert, S.; Kissel, H.; Biesenbach, J.; Rattunde, M.; Wagner, J.
Conference Paper
2009GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2009Influence of the intracavity heatspreader on the VECSEL temperature
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper
2009Infrared semiconductor laser modules for DIRCM applications
Wagner, J.; Hugger, S.; Rösener, B.; Fuchs, F.; Rattunde, M.; Yang, Q.K.; Bronner, W.; Aidam, R.; Köhler, K.; Raab, M.; Romasew, E.; Tholl, H.D.
Conference Paper
2009Investigation of thermal management in optically pumped, antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper, Journal Article
2009Klare Sicht im Blut durch Beleuchtung mit Infrarot-Lasern
Rattunde, M.; Krisch, I.
Journal Article
2009A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.
Conference Paper
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Journal Article
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Journal Article, Conference Paper
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Conference Paper
2009Semiconductor disk laser pumped Cr2+:Znse lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Rattunde, M.; Wagner, J.; Fedorov, V.V.; Moskalev, I.S.; Mirov, S.B.; Burns, D.
Journal Article
2009Short-pulse high-power operation of GaSb-based diode lasers
Müller, M.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Wagner, J.
Journal Article
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2009Wavelength stabilization and mode selection of a GaSb-based semiconductor disk laser at 2 µm by using a volume Bragg grating
Scholle, K.; Lamrini, S.; Fuhrberg, P.; Rattunde, M.; Wagner, J.
Conference Paper
20085W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2008High-brightness long-wavelength semiconductor disk lasers
Schulz, N.; Hopkins, J.-M.; Rattunde, M.; Burns, D.; Wagner, J.
Journal Article
2008High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Conference Paper
2008High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J.
Conference Paper
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D.
Conference Paper
2008Infrarot-Halbleiterlaser
Schulz, N.; Rattunde, M.; Wagner, J.; Roesener, B.
Patent
2008Measurement and simulation of thermal properties of optically pumped antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper
2008Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure
Bückers, C.; Thränhardt, A.; Koch, S.W.; Rattunde, Marcel; Schulz, N.; Wagner, Joachim; Hader, J.; Moloney, J.V.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Optically pumped GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Semiconductor disk laser pumped Cr2+:chalcogenide lasers
Hempler, N.; Hopkins, J.-M.; Rösener, B.; Schulz, N.; Rattunde, M.; Wagner, J.; Roy, U.N.; Burger, A.; Burns, D.
Conference Paper
2008Thermal management in 2.3-mu m semiconductor disk lasers: A finite element analysis
Kemp, A.J.; Hopkins, J.-M.; Maclean, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Burns, D.
Journal Article
2008Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Journal Article
2008Widely tunable micro-mechanical external-cavity diode laser emitting around 2.1 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Bläsi, B.; Kallweit, D.; Zappe, H.
Journal Article
2007Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K.
Journal Article
2007Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Conference Paper
2007High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D.
Conference Paper
2007Micro-mechanical external-cavity laser with wide tuning range
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Kallweit, D.; Zappe, H.
Conference Paper
2007Pulsed pumping of a 2.3m InGaAsSb semiconductor disk laser
Hempler, N.; Hopkins, J.-M.; Kemp, A.; Dawson, M.; Burns, D.; Shultz, N.; Rattunde, M.; Wagner, J.
Conference Paper
2007Pulsed pumping of semiconductor disk lasers
Hempler, N.; Hopkins, J.-M.; Kemp, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Dawson, M.D.; Burns, D.
Journal Article
2007Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime
Schulz, N.; Rattunde, M.; Manz, C.; Kohler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Conference Paper
2007Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Brauch, U.
Journal Article
2007Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2006GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J.
Journal Article
2006GaSb-based micro-mechanical external-cavity laser emitting around 2.3µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Kallweit, D.; Zappe, H.
Conference Paper
2006GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J.
Journal Article
2006GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Conference Paper
2006High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Journal Article
2006High power GaSb-based optically pumped VECSEL at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.
Conference Paper
2006High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
Eichhorn, M.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Journal Article
2006High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.
Journal Article
2006High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C.
Conference Paper
2006III-Sb-based type-I QW diode lasers
Rattunde, M.; Schmitz, J.; Mermelstein, C.; Kiefer, R.; Wagner, J.
Book Article
2006Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Journal Article
2006Tunable, single-frequency, diode-pumped 2.3µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2006Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Zappe, H.P.; Wagner, J.
Journal Article
2005(AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
Wagner, J.; Geerlings, E.; Kaufel, G.; Kelemen, M.T.; Manz, C.; Pfahler, C.; Rattunde, M.; Schmitz, J.
Conference Paper
2005GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J.
Conference Paper
2005High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J.
Conference Paper
2005Low-threshold, low beam divergence GaSb-based quantum-well diode-lasers emitting in the 1.9 to 2.4 µm wavelength range
Rattunde, M.; Geerlings, E.; Hülsmann, A.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2004Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2004GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence
Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2004Infrared semiconductor lasers for sensing and diagnostics
Wagner, J.; Mann, C.; Rattunde, M.; Weimann, G.
Journal Article
2004Room-temperature external cavity GaSb-based diode laser around 2.13 µm
Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J.
Journal Article
2003Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2003Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M.
Dissertation
2003Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Conference Paper
20021.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2002Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Journal Article
2002Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2002Physics and applications of III-Sb based type-I QW diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper
2002Sb-based mid-infrared diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Simanowski, S.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper
2001Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G.
Journal Article
2001Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
2001Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper