Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire
Senichev, A.; Corfdir, P.; Brandt, O.; Ramsteiner, M.; Breuer, S.; Schilling, J.; Geelhaar, L.; Werner, P.
Journal Article
2003Modulation of the electronic properties of GaN films by surface acoustic waves
Camacho, J.; Santos, P.V.; Alsina, F.; Ramsteiner, M.; Ploog, K.H.; Cantarero, A.; Obloh, H.; Wagner, J.
Journal Article
2002Anharmonicity of the E2(high) and A(1)(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
2001Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
1996Tailoring of Si doping layers in GaAs during molecular beam epitaxy
Däweritz, L.; Kostial, H.; Ramsteiner, M.; Klann, R.; Schützendübe, P.; Stahrenberg, K.; Behrend, J.; Hey, R.; Maier, M.; Ploog, K.
Journal Article
1995Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
Däweritz, L.; Hey, R.; Ramsteiner, M.; Wagner, J.; Maier, M.; Kostial, H.; Behrend, J.; Höricke, M.
Journal Article
1995InAs/GaSb superlattices with different interfaces studied by resonant raman scattering ans ellipsometry
Behr, D.; Wagner, J.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Conference Paper
1995Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering
Ramsteiner, M.; Däweritz, L.; Hey, R.; Jungk, G.; Wagner, J.
Conference Paper
1994Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.
Wagner, J.; Ramsteiner, M.; Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Braun, W.; Ploog, K.
Journal Article
1994Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs-001- vicinal surfaces during MBE growth.
Ramsteiner, M.; Wagner, J.; Jungk, G.; Behr, D.; Däweritz, L.; Hey, R.
Journal Article
1994Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Däweritz, L.; Hey, R.
Journal Article
1994Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Behr, D.; Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Journal Article
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Journal Article
1992Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in delta-doped GaAs-Si.
Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.
Journal Article
1992Optische Untersuchungen an hoch dotierten GaAs-Schichten und GaAs/AlXGa1-XAs-Heterostrukturen
Ramsteiner, M.
Dissertation
1992Transport asymmetry and photovoltaic response in -AlGa-As/AlAs/GaAs/-AlGa-As single-barrier quantum-wel infrared detectors.
Schneider, H.; Kheng, K.; Ramsteiner, M.; Ralston, J.D.; Fuchs, F.; Koidl, P.
Journal Article
1992Two-color GaAs/-AlGa-As quantum well infrared detector with voltage-tunable spectral sensitivity at 3-5 and 8-12 mym.
Kheng, K.; Schneider, H.; Fuchs, F.; Koidl, P.; Ralston, J.D.; Ramsteiner, M.
Journal Article
1991Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J.
Conference Paper
1991Effect of spatial localization of dopant atoms of the spacing of electron subbands in delta-doped GaAs-Si.
Richards, D.; Fasol, G.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1991Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures
As, D.J.; Brandt, G.; Dischler, B.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Journal Article
1991Low temperature infrared measurements and photo-induced persistent changes of intersubband transitions in GaAs/AlGaAs multiple quantum wells
Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M.
Conference Paper
1991Raman depth profiling in situ sputtering.
Koidl, P.; Ramsteiner, M.; Wagner, J.
Journal Article
1990Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Conference Paper
1990Doping density dependence of intersubband transitions in GaAs/AlxGa1-xAs quantum-well structures.
Ralston, J.D.; Biebl, H.; Koidl, P.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Journal Article
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Conference Paper
1990Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J.
Journal Article
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1989Plasma deposition, properties and structure of amorphous hydrogenated carbon films.
Dischler, B.; Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1989Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J.
Journal Article
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Journal Article
1989Resonant Raman scattering of amorphous carbon and polycrystalline diamond films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1989Resonant raman scattering on In+-implanted CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Ramsteiner, M.; Wagner, J.
Journal Article
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Conference Paper
1988Raman scattering of amorphous carbon/semiconductor interface layers.
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1988Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Journal Article
1988Resonance Raman scattering of Si local vibrational modes in GaAs
Maier, M.; Ramsteiner, M.; Ennen, H.; Wagner, J.
Journal Article
1987Binding energies of shallow donors in semi-insulating GaAs
Ramsteiner, M.; Wagner, J.
Journal Article
1987Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Conference Paper
1987Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite?
Ramsteiner, M.; Newmann, R.C.; Wagner, J.
Journal Article
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Journal Article
1987Ground-state splitting of the 78-meV double acceptor in GaAs
Ramsteiner, M.; Wagner, J.
Journal Article
1987Raman scattering form extremely thin a-C-H films deposited on semiconductors
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Conference Paper
1987Raman scattering from extremely thin hard amorphous carbon films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1987Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J.
Conference Paper
1987Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Conference Paper
1987Resonant raman scattering of hydrogenated amorphous carbon - evidence for pi-bonded carbon clusters
Ramsteiner, M.; Wagner, J.
Journal Article
1986Residual acceptor assessment in as-grown bulk GaAs by raman and selective pair luminescence spectroscopy - A comparative study
Ramsteiner, M.; Wagner, J.
Journal Article