Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Journal Article
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Conference Paper
2000Superior depth resolution of indium in (Al, In, Ga) N structures
Maier, M.; Müller, S.; Ramakrishnan, A.
Conference Paper
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1999Herstellung und Charakterisierung von InGaN/GaN Heterostrukturen für kurzwellige Emitter
Ramakrishnan, A.
Thesis
1999In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Manz, C.; Kunzer, M.; Obloh, H.; Ramakrishnan, A.; Kaufmann, U.
Journal Article
1999Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B.
Journal Article
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1998Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P.
Journal Article
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article