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| 1999 | Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1997 | Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J. | Conference Paper |
| 1997 | Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Torre, M.S.; Esquivias, I.; Romero, B.; Czotscher, K.; Weisser, S.; Ralston, J.D.; Larkins, E.; Benz, W.; Rosenzweig, J. | Journal Article |
| 1997 | Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1996 | Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1996 | Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
| 1996 | Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M. | Journal Article |
| 1996 | Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Journal Article |
| 1996 | Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
Herres, N.; Fuchs, F.; Schmitz, J.; Pavlov, K.M.; Wagner, J.; Ralston, J.D.; Koidl, P.; Gadaleta, C.; Scamarcio, G. | Journal Article |
| 1996 | Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures
Sah, R.E.; Ralston, J.D.; Daleiden, J.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Benz, W. | Journal Article |
| 1996 | High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A. | Conference Paper |
| 1996 | Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D. | Journal Article |
| 1996 | InGaAsP/InP 1.55-micron lasers with chemically assisted ion beam-etched facets
Daleiden, J.; Eisele, K.; Keller, R.; Vollrath, G.; Fiedler, F.; Ralston, J.D. | Journal Article |
| 1996 | Intersubband Raman scattering in InAs/AlSb quantum wells
Wagner, J.; Schmitz, J.; Richards, D.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1996 | Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Schönfelder, A.; Ralston, J.D.; Czotscher, K.; Weisser, S.; Rosenzweig, J.; Larkins, E.C. | Journal Article |
| 1996 | Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I. | Journal Article |
| 1996 | Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Conference Paper |
| 1995 | 37 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J. | Conference Paper |
| 1995 | Beam propagation model of tapered amplifiers including non-linear gain and carrier diffusion
Chazan, P.; Ralston, J.D. | Conference Paper |
| 1995 | Characteristics of a two-component chemically-assisted ion-beam etching techniques for dry etching of high-speed multiple quantum well laser mirrors
Sah, R.E.; Ralston, J.D.; Weisser, S.; Eisele, K. | Journal Article |
| 1995 | Chemical analysis of a C12/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions
Daleiden, J.; Eisele, K.; Sah, R.E.; Schmidt, K.H.; Ralston, J.D. | Journal Article |
| 1995 | CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Book Article |
| 1995 | Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Journal Article |
| 1995 | Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D. | Journal Article |
| 1995 | InAs/GaSb superlattices with different interfaces studied by resonant raman scattering ans ellipsometry
Behr, D.; Wagner, J.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G. | Conference Paper |
| 1995 | Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D. | Journal Article |
| 1995 | Low-temperature CAIBE processes for InP-based optoelectronics
Daleiden, J.; Eisele, K.; Ralston, J.D.; Fiedler, F.; Vollrath, G. | Conference Paper |
| 1995 | Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
Schmitz, J.; Wagner, J.; Fuchs, F.; Herres, N.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1995 | Picosecond spectroscopy of optically modulated high-speed laser diodes.
Sutter, D.H.; Schneider, H.; Weisser, S.; Ralston, J.D.; Larkins, E.C. | Journal Article |
| 1995 | Process parameter dependence of Imurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multible quantum wells
Bürkner, S.; Maier, M.; Larkins, E.C.; Rothemund, W.; O'Reilly, E.P.; Ralston, J.D. | Journal Article |
| 1995 | Raman scattering by folded longitudinal acoustic phonons in InAs/GaSb superlattices - Resonant enhancement an effect of interfacial bonding
Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1995 | Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J. | Conference Paper |
| 1995 | Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures
Sah, R.E.; Ralston, J.D.; Eichin, G.; Dischler, B.; Rothemund, W.; Wagner, J.; Larkins, E.C.; Baumann, H. | Journal Article |
| 1995 | Tapered InGaAs/GaAs MWQ lasers with carbon modulation-doping and reduced filamentation
Ralston, J.D.; Laughton, F.R.; Chazan, P.; Larkins, E.C.; Maier, M.; Abd Rahman, M.K.; White, I.H. | Journal Article |
| 1995 | Tunneling assisted thermionic emission in double-barrier quantum well structures
Ehret, S.; Schneider, H.; Larkins, E.C.; Ralston, J.D. | Journal Article |
| 1995 | Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J. | Journal Article |
| 1994 | Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J. | Conference Paper |
| 1994 | Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D. | Conference Paper |
| 1994 | DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J. | Conference Paper |
| 1994 | Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K. | Conference Paper |
| 1994 | Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers - influence of strain and p-doping
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1994 | Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K. | Conference Paper |
| 1994 | Elimination of long-term calibration drift in molecular beam epitaxy by cooling the source flange
Larkins, E.C.; Thaden, H.; Betsche, H.; Eichin, G.; Ralston, J.D. | Journal Article |
| 1994 | Enhanced CAIBE for high-speed OEICs
Ralston, J.D.; Eisele, K.; Sah, R.E.; Fleissner, J.; Bronner, W.; Hornung, J.; Raynor, B. | Journal Article |
| 1994 | Fourier transform photoluminescence spectroscopy of n-type bulk InAs and InAs/AlSb single quantum wells
Fuchs, F.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Conference Paper |
| 1994 | Impedance characteristics of quantum-wells lasers
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Romero, B.; Rosenzweig, J. | Journal Article |
| 1994 | Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1994 | Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D. | Conference Paper |
| 1994 | Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors.
Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1994 | Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography
Baeumler, M.; Larkins, E.C.; Bachem, K.H.; Bernklau, D.; Riechert, H.; Ralston, J.D.; Jantz, W. | Conference Paper |
| 1994 | Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy
Fuchs, F.; Schmitz, J.; Schwarz, K.; Wagner, J.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy
Wagner, J.; Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Conference Paper |
| 1994 | Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Investigation of magneto-tunneling processes in InAs/AlSb/GaSb based resonant interband tunneling structures
Obloh, H.; Schmitz, J.; Ralston, J.D. | Conference Paper |
| 1994 | Ion-channeling studies of InyGa1-yAs/GaAs strained-layer single and multiple quantum-well structures
Flemig, G.W.; Brenn, R.; Larkins, E.C.; Bürkner, S.; Bender, G.; Baeumler, M.; Ralston, J.D. | Journal Article |
| 1994 | Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J. | Conference Paper |
| 1994 | Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K. | Journal Article |
| 1994 | MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Conference Paper |
| 1994 | MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R. | Conference Paper |
| 1994 | Partial interdiffusion of InGaAs/GaAs MQW modulators for photonic integration
Humbach, O.; Soyka, R.; Stöhr, A.; Bürkner, S.; Ralston, J.D.; Larkins, E.C.; Jäger, D. | Conference Paper |
| 1994 | Photoluminescence of InAs/AlSb single quantum wells.
Fuchs, F.; Schmitz, J.; Obloh, H.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Photovoltaic quantum well intersubband infrared detectors by internal electric fields
Schneider, H.; Ehret, S.; Larkins, E.C.; Ralston, J.D.; Schwarz, K.; Koidl, P. | Conference Paper |
| 1994 | Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Behr, D.; Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G. | Journal Article |
| 1994 | Spatially direct and indirect photoluminescence from InAs/AlSb heterostructures
Fuchs, F.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Spatially indirect photoluminescence from InAs/AlSb hetero-structures
Fuchs, F.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Heitz, R.; Hoffmann, A. | Journal Article |
| 1994 | Strain relaxation in In0.2Ga0.8As/GaAs MQW structures
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P. | Conference Paper |
| 1994 | Studies of GaSb-capped InAs/AlSb quantum wells by resonant Raman scattering.
Wagner, J.; Schmitz, J.; Maier, M.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1994 | Theoretical investigation of gain enhancements in strained In0.35Ga0.65As/Gas MQW lasers via p-doping.
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1994 | Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1993 | 30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
| 1993 | Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Conference Paper |
| 1993 | Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1993 | Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells
Schmitz, J.; Alvarez, A.-L.; Koidl, P.; Ralston, J.D.; Wagner, J. | Journal Article |
| 1993 | Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Journal Article |
| 1993 | Defect and strain redistribution in InxGa1-xAs/GaAs multiple quantum wells studied by resonant Raman scattering.
Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.; Wagner, J. | Journal Article |
| 1993 | Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J. | Journal Article |
| 1993 | Impedance, modulation response, and equivalent circuit of ultra-high-speed InGaAs/GaAs MQW lasers
Weisser, S.; Tasker, P.J.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J. | Conference Paper |
| 1993 | InGaAs/GaAs multiple-quantum-well modulators and switches
Stöhr, A.; Humbach, O.; Zumkley, S.; Wingen, G.; David, G.; Jäger, D.; Bollig, B.; Larkins, E.C.; Ralston, J.D. | Journal Article |
| 1993 | MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W. | Journal Article |
| 1993 | Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J. | Conference Paper |
| 1993 | P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J. | Journal Article |
| 1993 | Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J. | Conference Paper |
| 1993 | Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D. | Journal Article |
| 1993 | Raman spectroscopic study of interfaces in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1993 | Space-charge effects in photovoltaic double barrier quantum well infrared detectors.
Schneider, H.; Larkins, E.C.; Ralston, J.D.; Schwarz, K.; Fuchs, F.; Koidl, P. | Journal Article |
| 1993 | Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P. | Journal Article |
| 1993 | Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J. | Journal Article |
| 1993 | Strained-layer multiple-quantum-well InGaAs/GaAs waveguide modulators operating around 1 mym.
Humbach, O.; Stöhr, A.; Auer, U.; Larkins, E.C.; Ralston, J.D.; Jäger, D. | Journal Article |
| 1993 | Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J. | Journal Article |
| 1992 | 16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P. | Conference Paper |
| 1992 | Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J. | Conference Paper |
| 1992 | Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Rosenzweig, J.; Fleissner, J. | Conference Paper |
| 1992 | Diffusive electrical conduction in high-speed p-i-n photodetectors.
Schneider, H.; Larkins, E.C.; Fleissner, J.; Bender, G.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1992 | Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Journal Article |
| 1992 | Grating coupling and intersubband absorption at 10mym in GaAs/AlXGa1-XAs infrared quantum well waveguides.
Bittner, P.; Fleissner, J.; Dischler, B.; Gallagher, D.F.G.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1992 | High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
| 1992 | High-speed InGaAs/GaAs multiple quantum well electrooptical modulator.
Wingen, G.; Zumkley, S.; David, G.; Larkins, E.C.; Ralston, J.D.; Jäger, D. | Conference Paper |
| 1992 | Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J. | Conference Paper |
| 1992 | Modelling and characterization of high-speed GaAs and In0.35Ga0.65As multiple-quantum-well laser diodes
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Gallagher, D.F.G. | Conference Paper |
| 1992 | Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Conference Paper |
| 1992 | Novel molecular-beam epitaxially grown GaAs/AlGaAs quantum well structures for infrared detection and integrated optics at 3-5 and 8-12 mym.
Schneider, H.; Kheng, K.; Fuchs, F.; Bittner, P.; Dischler, B.; Gallagher, D.F.G.; Koidl, P.; Ralston, J.D. | Journal Article |
| 1992 | Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J. | Conference Paper |
| 1992 | Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D. | Conference Paper |
| 1992 | Photovoltaic intersubband photodetectors using GaAs quantum wells confined by AlAs tunnel barriers.
Dischler, B.; Fuchs, F.; Kheng, K.; Koidl, P.; Ralston, J.D.; Schneider, H. | Book Article |
| 1992 | Transport asymmetry and photovoltaic response in -AlGa-As/AlAs/GaAs/-AlGa-As single-barrier quantum-wel infrared detectors.
Schneider, H.; Kheng, K.; Ramsteiner, M.; Ralston, J.D.; Fuchs, F.; Koidl, P. | Journal Article |
| 1992 | Two-color GaAs/-AlGa-As quantum well infrared detector with voltage-tunable spectral sensitivity at 3-5 and 8-12 mym.
Kheng, K.; Schneider, H.; Fuchs, F.; Koidl, P.; Ralston, J.D.; Ramsteiner, M. | Journal Article |
| 1991 | Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.
Schneider, J.; Müller, H.D.; Fuchs, F.; Thonke, K.; Dörnen, A.; Ralston, J.D. | Journal Article |
| 1991 | Grating coupled GaAs/AlGaAs waveguide structures for 10-mym detectors.
Bittner, P.; Fleissner, J.; Gallagher, D.F.G.; Ralston, J.D. | Conference Paper |
| 1991 | Intersubband absorption and infrared photodetection at 3.5 and 4.2 mym in GaAs quantum wells
Dischler, B.; Fuchs, F.; Koidl, P.; Ralston, J.D.; Schneider, H. | Journal Article |
| 1991 | Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures
As, D.J.; Brandt, G.; Dischler, B.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M. | Journal Article |
| 1991 | Low temperature infrared measurements and photo-induced persistent changes of intersubband transitions in GaAs/AlGaAs multiple quantum wells
Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ralston, J.D.; Ramsteiner, M. | Conference Paper |
| 1991 | Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures.
Hiesinger, P.; Schmälzlin, J.; Fuchs, F.; Ralston, J.D.; Wagner, J. | Journal Article |
| 1991 | Photovoltaic intersubband detectors for 3-5 mym using GaAs quantum wells sandwiched between AlAs tunnel barriers.
Dischler, B.; Fuchs, F.; Koidl, P.; Ralston, J.D.; Schneider, H.; Schwarz, K. | Journal Article |
| 1991 | Quantum-Well interdiffusion for integrated photonics.
Eastman, L.F.; Dischler, B.; Ralston, J.D. | Conference Paper |
| 1991 | Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G. | Journal Article |
| 1990 | Doping density dependence of intersubband transitions in GaAs/AlxGa1-xAs quantum-well structures.
Ralston, J.D.; Biebl, H.; Koidl, P.; Ramsteiner, M.; Ennen, H.; Wagner, J. | Journal Article |
| 1990 | Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H. | Conference Paper |
| 1990 | Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P. | Conference Paper |
| 1990 | Structural, electrical and optical characterization of single-crystal ErAs layers grown on GaAs by MBE.
Ralston, J.D.; Hiesinger, P.; Schneider, J.; Müller, H.D.; Rothemund, W.; Fuchs, F.; Schmälzlin, J.; Thonke, K.; Herres, N.; Ennen, H.; Wennekers, P. | Journal Article |
| 1990 | Study of ErAs/GaAs strained-layer structures using optical absorption.
Ralston, J.D.; Fuchs, F.; Schneider, J.; Schmälzlin, J. | Journal Article |