Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
2013Qualification of 50 V GaN on SiC technology for RF power amplifiers
Wel, P.J. van der; Roedle, T.; Lambert, B.; Blanck, H.; Dammann, M.
Journal Article, Conference Paper
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2010Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.
Journal Article
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Journal Article
2010Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K.
Conference Paper
2009Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper, Journal Article
2009GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Journal Article
2009Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Journal Article, Conference Paper
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Conference Paper
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper
2008Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Conference Paper
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper