Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
Gerrer, Thomas; Graff, Andreas; Simon-Najasek, Michél; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker
Journal Article
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh
Conference Paper
2019Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Conference Paper
2019Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver
Conference Paper
2019Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2019A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2019Investigation of the use of MOSHEMT based amplifiers in direct receivers for radiometry applications
Bansal, Nikesh
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent)
Master Thesis
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications
Samis, Stanislav; Friesicke, Christian; Feuerschüz, Philip; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, A.F.
Conference Paper
2018A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power
Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger
Conference Paper
2018Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger
Conference Paper
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Journal Article
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Entwurf und Charakterisierung monolithischintegrierter Logikschaltungen basierend auf einer lateralen 600 V GaN-on-Si Technologie
Basler, Michael
: Kallfass, Ingmar (1. Prüfer); Quay, Rüdiger (2. Prüfer)
Master Thesis
2018First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger
Conference Paper
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Conference Paper
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Journal Article
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2018Investigation of high-efficiency hybrid power combining for ka-band frequencies
Neininger, Philipp; Meder, Dirk; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Conference Paper
2018Investigation of processing modules to establish a mm-wave foundry process for space applications
Brueckner, Peter; Dammann, Michael; Quay, Rüdiger
Conference Paper
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Journal Article
2018Low-frequency dispersion and state dependency in modern microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael
Conference Paper
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Conference Paper
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Conference Paper
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018A novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Performance evaluation of commercial GaN RF HEMTs as hybrid topology power switches
Pereira, Aaron; Al-Sarawi, Said; Weste, N.; Abbott, D.; Carrubba, Vincenzo; Quay, Rüdiger
Conference Paper
2018RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Riemann-pump based RF-power DACs in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2018Suppression of iron memory effect in GaN epitaxial layers
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Müller, Stefan; Quay, Rüdiger; Stadelmann, Tim
Journal Article
2018Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger
Journal Article, Conference Paper
2018Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.
Conference Paper
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018X-band GaN high power amplifier with integrated power switch for airborne applications
Pereira, A.; Al-Sarawi, S.; Weste, N.; Abbott, D.; Kuhn, J.; Carrubba, V.; Quay, R.
Conference Paper
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer)
Dissertation
2017Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Conference Paper
2017Enhancement of the broadband efficiency of a class-j power amplifier with varactor-based dynamic load modulation
Amirpour, Raul; Darraji, Ramzi; Ghannouchi, Fadhel; Quay, Rüdiger
Journal Article
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Conference Paper
2017Investigation of a VDHL implementation of the data preprocessing for a FMCW MIMO mm-wave camera
Goodchild, Chandran
: Reindl, Leonhard (Betreuer); Quay, Rüdiger (Betreuer)
Bachelor Thesis
2017Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer)
Master Thesis
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017New Concept for Power Compression Improvement of GaN Cascodes in Broadband Power Amplifiers
Huber, T.; Quay, R.; Bösch, W.
Journal Article
2017New concept to control the gain of GaN-cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Conference Paper
2017Noise degradation of cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Conference Paper
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick
Conference Paper
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Journal Article
2017A sequential power amplifier at 3.5 GHz for 5G applications
Neininger, Philipp; Friesicke, Christian; Krause, Sebastian; Meder, Dirk; Lozar, Roger; Merkle, Thomas; Quay, Rüdiger; Zwick, Thomas
Conference Paper
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Conference Paper
2017Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger
Conference Paper
2017Untersuchung kompakter und effizienter Leistungsverstärker-Module für 5G-MIMO-Antennen-Anwendungen bei 3,5 GHz
Neininger, Philipp
: Zwick, Thomas (Betreuer); Quay, Rüdiger (Betreuer); Friesicke, Christian (Betreuer)
Master Thesis
2016A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band
Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A.F.
Conference Paper
2016Active multi-feed satcom systems with GaN SSPA at K-band
Feuerschütz, P.; Rave, C.; Samis, S.; Friesicke, C.; Quay, R.; Konrath, W.; Hirche, K.; Schobert, D.; Schneider, M.; Jacob, A.F.
Conference Paper
2016Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures
Raay, F. van; Quay, R.; Schwantuschke, D.; Ohlrogge, M.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Conference Paper
2016Evaluation, design and realisation of a Riemann Pump for the frequency range of 0..6 GHz for 5G mobile communication
Weiß, M.
: Ambacher, O. (Referent); Quay, R. (Referent)
Master Thesis
2016A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016GaN-based E-band power amplifier modules
Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Group III-Nitride microwave monolithically integrated circuits
Quay, R.
Book Article
2016High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
Conference Paper
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Journal Article
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Conference Paper
2016Investigation of system parameters for increasing the imaging speed and image quality of a MIMO millimeter wave camera
George, R.
: Ambacher, O. (Referent); Quay, R. (Referent); Rösch, M. (Betreuer); Bleh, D. (Betreuer)
Master Thesis
2016LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.
Conference Paper
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Conference Paper
2016Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Conference Paper
2016Multi-decade GaN feedback power amplifiers in common-source and cascode topology
Huber, T.; Quay, R.; Bösch, W.
Conference Paper
2016Multifunktionaler siliziumbasierter Testchip für die Aufbau- und Verbindungstechnik in der Leistungselektronik
Feißt, M.
: Wilde, J. (Referent); Quay, R. (Referent); Möller, E. (Betreuer)
Master Thesis
2016Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-Band
Friesicke, C.; Maier, T.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Conference Paper
2016A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
Feuerschütz, P.; Friesicke, C.; Quay, R.; Jacob, A.F.
Conference Paper
2016RF performance of trigate GaN HEMTs
Alsharef, M.; Christiansen, M.; Granzner, R.; Ture, E.; Quay, R.; Ambacher, O.; Schwierz, F.
Journal Article
2016Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.)
Conference Proceedings
2016Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Conference Paper
2016Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.
Conference Paper
2016Study on packaging and driver integration with GaN switches for fast switching
Klein, K.; Hoene, E.; Reiner, R.; Quay, R.
Conference Paper
2016Thermal performance of high-temperature stable die-attachments for GaN HEMTs
Bajwa, A.A.; Reiner, R.; Quay, R.; Wilde, J.
Conference Paper
2016Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2016Vergleichende thermische Untersuchungen von Leistungsbauelementen
Grießer, Jan
: Ambacher, O. (Referent); Quay, R. (Referent); Reiner, R. (Betreuer)
Bachelor Thesis
2015Assembly and packaging technologies for high-temperature and high-power GaN devices
Bajwa, A.A.; Qin, Yangyang; Reiner, R.; Quay, R.; Wilde, J.
Journal Article
2015Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
Raay, F. van; Quay, R.; Aja, B.; Moschetti, G.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Conference Paper
2015Feldeffekttransistor und Verfahren zu seiner Herstellung
Quay, Rüdiger; Köhler, Klaus
Patent
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Journal Article
2015High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2015High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
2015A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.
Conference Paper
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Investigations of higher order doherty amplifiers for high power-efficiency AlGaN/GaN amplifier design
Krause, S.
: Zwick, T. (Supervisor); Quay, R. (Supervisor); Maroldt, S. (Supervisor)
Master Thesis
2015Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.A.
Conference Paper
2015Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2015Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
Conference Paper
2015A novel broadband high-power source-pull/load-pull concept for the HF- to UHF-range
Maier, F.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.
Conference Paper
2015A novel broadband high-power source-pull/load-pull concept for the HF-to UHF-range
Maier, F.A.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.
Conference Paper
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Conference Paper
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Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2015The resistive-reactive class-J power amplifier mode
Friesicke, C.; Quay, R.; Jacob, A.F.
Journal Article
2015Switching frequency modulation for GaN-based power converters
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
2014A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
Conference Paper
2014Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies
Maier. T.; Carrubba, V.; Quay, R.; Raay, F. van; Ambacher, O.
Conference Paper
2014Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
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Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.
Conference Paper
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Bajwa, A.A.; Qin, Y.; Wilde, J.; Reiner, R.; Waltereit, P.; Quay, R.
Conference Paper
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Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
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Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Friesicke, C.; Quay, R.; Jacob, A.F.
Conference Paper
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Alsharef, M.; Granzner, R.; Ture, E.; Quay, R.; Racko, J.; Breza, J.; Schwierz, F.
Conference Paper
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Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
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Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Conference Paper
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Aidam, R.; Diwo, E.; Godejohann, B.-J.; Kirste, L.; Quay, R.; Ambacher, O.
Journal Article
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Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
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Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
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Friesicke, C.; Jacob, A.F.; Quay, R.
Conference Paper
2014Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
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Reiner, R.; Waltereit, P.; Benkhelifa, F.; Walcher, H.; Quay, R.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.
Conference Paper
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Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
Journal Article
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Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Figur, S.A.; Raay, F. van; Quay, R.; Vietzorreck, L.; Ziegler, V.
Journal Article
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Figur, S.A.; Raay, F. van; Quay, R.; Lohmiller, P.; Vietzorreck, L.; Ziegler, V.
Journal Article
2014Robust gate driver circuit for monolithic integration with GaN-on-Si 600 V power transistor
Mönch, S.
: Quay, R. (Betreuer); Reiner, R. (Betreuer)
Master Thesis
2014The sky's the limit
Emrick, R.; Cruz, P.; Carvalho, N.B.; Gao, S.; Quay, R.; Waltereit, P.
Journal Article
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Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O.
Conference Paper
2014Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Pereira, A.; Parker, A.; Heimlich, M.; Weste, N.; Quay, R.; Carrubba, V.
Conference Paper
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Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Journal Article
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Pahl, P.; Diebold, S.; Schwantuschke, D.; Wagner, S.; Lozar, R.; Quay, R.; Kallfass, I.; Zwick, T.
Conference Paper
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Pahl, P.; Diebold, S.; Schwantuschke, D.; Wagner, S.; Lozar, R.; Quay, R.; Kallfass, I.; Zwick, T.
Conference Paper
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Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Journal Article
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Conference Paper
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Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
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Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
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Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
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Schwantuschke, D.; Seelmann-Eggebert, M.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Conference Paper
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Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Journal Article
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Journal Article, Conference Paper
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Ghione, G.; Chen, K.J.; Egawa, T.; Meneghesso, G.; Palacios, T.; Quay, R.
Journal Article
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Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
2013High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
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Conference Paper
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Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
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Musser, M.; Raay, F. van; Brueckner, P.; Bronner, W.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Maier, T.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Friesicke, C.; Quay, R.; Rohrdantz, B.; Jacob, A.F.
Conference Paper
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Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Journal Article
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Dennler, P.; Quay, R.; Ambacher, O.
Conference Paper
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Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.
Conference Paper
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Maroldt, S.; Aja, B.; Van Raay, F.; Krause, S.; Brueckner, P.; Quay, R.
Conference Paper
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Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Quay, R.; Waltereit, P.
Conference Paper
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Ghione, G.; Bonani, F.; Quay, R.; Kasper, E.
Book Article
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Figur, S.A.; Ziegler, V.; Raay, F. van; Quay, R.; Vietzorreck, L.
Conference Paper
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Figur, S.A.; Raay, F. van; Quay, R.; Vietzorreck, L.; Ziegler, V.
Journal Article
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Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M.
Conference Paper
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Quay, R.; Waltereit, P.; Kühn, J.; Brueckner, P.; Heijningen, M. van; Jukkala, P.; Hirche, K.; Ambacher, O.
Conference Paper
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Schmid, U.; Sledzik, H.; Schuh, P.; Schroth, J.; Oppermann, M.; Brueckner, P.; Raay, F. van; Quay, R.; Seelmann-Eggebert, M.
Journal Article
20128-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
201294 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology
Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.
Conference Paper
2012Advances on GaN mm-wave power amplifiers to 100 GHz
Quay, R.; Brueckner, P.; Heijningen, M. van; Mikulla, M.; Ambacher, O.
Conference Paper
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Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Journal Article, Conference Paper
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Carrubba, V.; Akmal, M.; Quay, R.; Lees, J.; Benedikt, J.; Cripps, S.C.; Tasker, P.J.
Journal Article
2012Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Conference Paper
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Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
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Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Conference Paper
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Conference Paper
2012An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band
Friesicke, C.; Kühn, J.; Brueckner, P.; Quay, R.; Jacob, A.F.
Conference Paper
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Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O.
Conference Paper
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Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Journal Article
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Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O.
Conference Paper
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Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
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Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.
Conference Paper
2012High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours
Waltereit, P.; Kuhn, J.; Quay, R.; Raay, F. van; Dammann, M.; Casar, M.; Muller, S.; Mikulla, M.; Ambacher, O.; Latti, J.; Rostewitz, M.; Hirche, K.; Daubler, J.
Conference Paper
2012A high gain SiGe-GaN switching power amplifier in the GHz-range
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R.
Conference Paper
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Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Journal Article
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Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Conference Paper
2012An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Conference Paper
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Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Conference Paper
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Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Conference Paper
2012Microwave and millimeter wave integrated circuits MTT-6: The RF core chips of the 21st century
Quay, R.; Kissinger, D.
Journal Article
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Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2012Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
2012Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2012Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2012A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Conference Paper
2012A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Conference Paper
2012W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
Heijningen, M. van; Rodenburg, M.; Vliet, F.E. van; Massler, H.; Tessmann, A.; Brueckner, P.; Müller, S.; Schwantuschke, D.; Quay, R.; Narhi, T.
Conference Paper
2011A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R.
Conference Paper
2011900 MHz pulse-width-modulated class-S power amplifier with improved linearity
Maier, S.; Wiegner, D.; Zierdt, M.; Kuebart, W.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
Conference Paper
2011AlGaN/GaN power amplifiers for ISM frequency applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Conference Paper
2011Analysis of GaN HEMTs for broadband high-power amplifier design
Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O.
Conference Paper
2011Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O.
Conference Paper
2011Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.
Conference Paper
2011Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2011Design and modelling challenges for advanced class-S digital transmitters
Quay, R.; Maroldt, S.
Conference Paper
2011Design and realisation of a 50 W GaN class-E power amplifier
Sochor, P.- L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R.
Conference Paper
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Journal Article, Conference Paper
2011Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
Journal Article
2011Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
Journal Article
2011A high-power dual-gate GaN switching-amplifier in the GHz-range
Heck, S.; Brackle, A.; Berroth, M.; Maroldt, S.; Quay, R.
Conference Paper
2011A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Brueckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O.
Conference Paper
2011A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Bruckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O.
Conference Paper
2011InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O.
Conference Paper
2011Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, W.; Kiefer, R.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
Conference Paper
2011Multiband doherty RF power amplifier
Jüschke, P.; Wiegner, D.; Luz, G.; Machinal, R.; Pascht, A.; Quay, R.
Conference Paper
2011Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, O.
Journal Article
2011Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Conference Paper
2011Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O.
Conference Paper
2011Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
Maier, S.; Wiegner, D.; Zierdt, M.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
Conference Paper
2011A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O.
Conference Paper
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Journal Article
2010AlGaN/GaN HEMTs for high voltage applications
Benkhelifa, F.; Krausse, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2010AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications
Do, M.-N.; Seelmann-Eggebert, M.; Quay, R.; Langrez, D.; Cazaux, J.-L.
Conference Paper
2010AlGaN/GaN-based power amplifiers for mobile radio applications: A review from the system supplier's perspective
Wiegner, D.; Luz, G.; Jüschke, P.; Machinal, R.; Merk, T.; Seyfried, U.; Templ, W.; Pascht, A.; Quay, R.; Raay, F. van
Journal Article
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2010Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2010Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.
Journal Article
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Journal Article
2010Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.
Journal Article
2010Gallium nitride RF-devices. An overview on the development activities in Europe
Quay, R.; Mikulla, M.
Conference Paper
2010GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R.
Conference Paper
2010GaN devices for communication applications: Evolution of amplifier architectures
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S.
Journal Article
2010GaN power FETs for next generation mobile communication systems
Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2010GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
Journal Article
2010Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs
Kühn, J.; Waltereit, P.; Raay, F. van; Aidam, R.; Quay, R.; Ambacher, O.; Thumm, M.
Conference Paper
2010High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
Conference Paper
2010High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Journal Article, Conference Paper
2010Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O.
Conference Paper
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
Conference Paper
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Journal Article
2010Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K.
Conference Paper
2010Repeatable submicron AlGaN/GaN devices and MMICs
Quay, R.; Waltereit, P.
Conference Paper
2010Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R.
Journal Article
2009102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
Sun, H.F.; Alt, A.R.; Benedickter, H.; Bolognesi, C.R.; Feltin, E.; Carlin, J.-F.; Gonschorek, M.; Grandjean, N.; Maier, T.; Quay, R.
Journal Article
2009AlGaN/GaN HEMTs and MMICs for mm-wave power operation in space
Quay, R.; Heijningen, M. van
Conference Paper
2009Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Conference Paper
2009Design of X-band GaN MMICs using field plates
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Conference Paper
2009Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper, Journal Article
2009Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P.
Conference Paper
2009Gallium nitride MMICs for mm-wave power operation
Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.
Journal Article
2009GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K.
Journal Article
2009Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F.
Journal Article
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Journal Article
2009Halbleiterstruktur
Lim, T.; Aidam, R.; Kirste, L.; Quay, R.
Patent
2009High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O.
Conference Paper
2009High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2009Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.
Journal Article
2009L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2009Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Journal Article, Conference Paper
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Conference Paper
2009Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications
Suijker, E.M.; Rodenburg, M.; Hoogland, J.A.; Heijningen, M. van; Seelmann-Eggebert, M.; Quay, R.; Brueckner, P.; Vliet, F.E. van
Conference Paper
2009A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2009X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Journal Article
2008Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M.
Conference Paper
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008Gallium nitride electronics
Quay, R.
Book
2008GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Conference Paper
2008High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G.
Journal Article
2008High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K.
Conference Paper
2008Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Conference Paper
2008Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R.
Conference Paper
2008A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al.
Conference Paper
2007GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2007Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.
Conference Paper
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2007Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2007A systematic state-space approach to large-signal transistor modeling
Seelmann-Eggebert, M.; Merkle, T.; Raay, F. van; Quay, R.; Schlechtweg, M.
Journal Article
200620W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R.
Conference Paper
2006Advanced high power amplifier chain for X-band T/R-modules based on GaN MMICs
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Mikulla, M.; Weimann, G.
Conference Paper
2006Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.
Conference Paper
2006Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2006Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R.
Conference Paper
2006GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G.
Journal Article
2006InP DHBT based IC technology for over 80 Gbit/s data communications
Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper, Journal Article
2006InP DHBT-based monolithically integrated CDR/DEMUX IC operating at 80 Gbit/s
Makon, R.E.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.
Journal Article
2006Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W.
Conference Paper
2006Load pull characterization of GaN/AlGaN HEMTs
Schuberth, C.; Arthaber, H.; Mayer, M.; Magerl, G.; Quay, R.; Raay, F. van
Conference Paper
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Conference Paper, Journal Article
2006Two-stage GaN based multiband power amplifier for software defined radio applications
Naß, T.; Wiegner, D.; Seyfried, U.; Templ, W.; Weber, S.; Wörner, S.; Klose, P.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Kappeler, O.; Kiefer, R.
Conference Paper
2006X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs
Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Journal Article, Conference Paper
200580 Gbit/s monolithically integrated clock and data recovery circuit with 1:2 DEMUX using InP-based DHBTs
Makon, R.E.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
Schneider, K.; Driad, R.; Makon, R.E.; Massler, H.; Ludwig, M.; Quay, R.; Schlechtweg, M.; Weimann, G.
Journal Article
2005A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Journal Article
2005Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz
Makon, R.E.; Driad, R.; Schneider, K.; Massler, H.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.
Journal Article
2005GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band
Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G.
Conference Paper
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Journal Article
2005High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Walcher, H.; Kappeler, O.; Seelmann-Eggebert, M.; Muller, S.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G.
Conference Paper
2005InP DHBT-based IC technology for high-speed data communications
Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper
2005InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth
Schneider, K.; Driad, R.; Makon, R.E.; Tessmann, A.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.
Conference Paper
2005A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2005Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs
Makon, R.E.; Lang, M.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G.
Journal Article
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Conference Paper
2005Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2004Analysis and simulation of heterostructure devices
Palankovski, V.; Quay, R.
Book
2004Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz
Makon, R.E.; Schneider, K.; Driad, R.; Lang, M.; Aidam, R.; Quay, R.; Weimann, G.
Conference Paper
2004Linearisation issues in microwave amplifiers
O'Droma, M.S.; Portilla, J.; Bertran, E.; Donati, S.; Brazil, T.J.; Rupp, M.; Quay, R.
Conference Paper
2004Reliability of 70 nm metamorphic HEMTs
Dammann, M.; Leuther, A.; Quay, R.; Meng, M.; Konstanzer, H.; Jantz, W.; Mikulla, M.
Journal Article
2004Robust GaN HEMT low-noise amplifier MMICs for X-band applications
Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Quay, R.; Ramberger, S.; Massler, H.; Schlechtweg, M.
Journal Article
2003AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
Quay, R.; Weimann, G.
Journal Article
2003AlGaN/GaN HEMTs on SiC: Towards power operation at V-band
Quay, R.; Tessmann, A.; Kiefer, R.; Weber, R.; Raay, F. van; Kuri, M.; Riessle, M.; Massler, H.; Müller, S.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G.
Journal Article
2003Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.
Conference Paper
2003Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology
Seemann, K.; Ramberger, S.; Tessmann, A.; Quay, R.; Schneider, J.; Riessle, M.; Walcher, H.; Kuri, M.; Kiefer, R.; Schlechtweg, M.
Conference Paper
2003High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s
Quay, R.; Schlechtweg, M.; Leuther, A.; Lang, M.; Nowotny, U.; Kappeler, O.; Benz, W.; Ludwig, M.; Leich, M.; Driad, R.; Bronner, W.; Weimann, G.
Conference Paper
2003Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications
Raay, F. van; Quay, R.; Kiefer, R.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications
Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G.
Conference Paper
2002A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Massler, H.; Quay, R.; Ramberger, S.; Schlechtweg, M.
Conference Paper
2002AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Conference Paper
2002Analysis and simulation of high electron mobility transistors
Quay, R.
Dissertation
2002Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R.
Conference Paper
2002Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2001Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Journal Article
2001Nonlinear electronic transport and device performance of HEMTs
Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S.
Journal Article
2001Optimization of High-Speed SiGe HBTs
Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S.
Conference Paper
2001A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.
Conference Paper
2000Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.
Conference Paper
2000A global self-heating model for device simulation
Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000III/V device optimization by physics-based S-parameter simulation
Quay, R.; Palankovski, V.; Reuter, R.; Schlechtweg, M.; Kellner, W.; Selberherr, S.
Conference Paper
2000Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.
Conference Paper
2000Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.
Conference Paper
2000A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.
Journal Article
1999S-parameter simulation of HBTs on Gallium-Arsenide
Palankovski, V.; Quay, R.; Selberherr, S.; Schultheis, R.
Conference Paper
1999Thermal simulations of III/V HEMTs
Quay, R.; Reuter, R.; Grasser, T.; Selberherr, S.
Conference Paper
1997Automatic laser based material identification and marking, a new approach
Quay, R.; Sattmann, R.; Noll, R.
Conference Paper