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| 2013 | New low-frequency dispersion model for AlGaN/GaN HEMTs using integral transform and state description
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O. | Journal Article |
| 2012 | 8-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | 94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology
Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T. | Conference Paper |
| 2012 | Advances on GaN mm-wave power amplifiers to 100 GHz
Quay, R.; Brueckner, P.; Heijningen, M. van; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | AlGaN/GaN power amplifiers for ISM applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O. | Journal Article, Conference Paper |
| 2012 | The continuous inverse class-F mode with resistive second-harmonic impedance
Carrubba, V.; Akmal, M.; Quay, R.; Lees, J.; Benedikt, J.; Cripps, S.C.; Tasker, P.J. | Journal Article |
| 2012 | Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C. | Conference Paper |
| 2012 | Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band
Friesicke, C.; Kühn, J.; Brueckner, P.; Quay, R.; Jacob, A.F. | Conference Paper |
| 2012 | Fractal structures for low-resistance large area AlGaN/GaN power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | GaN-based millimeter-wave monolithic integrated circuits
Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J. | Conference Paper |
| 2012 | A high gain SiGe-GaN switching power amplifier in the GHz-range
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R. | Conference Paper |
| 2012 | A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brückner, P.; Seelmann-Eggebert, M.; Tessmann, A.; Mikulla, M.; Kallfass, I.; Quay, R. | Journal Article |
| 2012 | Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A. | Conference Paper |
| 2012 | Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2012 | Microwave and millimeter wave integrated circuits MTT-6: The RF core chips of the 21st century
Quay, R.; Kissinger, D. | Journal Article |
| 2012 | Novel III-N devices: Progess on GaN-based DC-DC converters for space
Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S. | Journal Article |
| 2012 | Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F.; Polyakov, V.M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O. | Journal Article |
| 2012 | Reverse bias stress test of GaN HEMTs for high-voltage switching applications
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2012 | Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2012 | A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Conference Paper |
| 2012 | A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I. | Conference Paper |
| 2012 | W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
Heijningen, M. van; Rodenburg, M.; Vliet, F.E. van; Massler, H.; Tessmann, A.; Brueckner, P.; Müller, S.; Schwantuschke, D.; Quay, R.; Narhi, T. | Conference Paper |
| 2011 | A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R. | Conference Paper |
| 2011 | 900 MHz pulse-width-modulated class-S power amplifier with improved linearity
Maier, S.; Wiegner, D.; Zierdt, M.; Kuebart, W.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R. | Conference Paper |
| 2011 | AlGaN/GaN power amplifiers for ISM frequency applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | Analysis of GaN HEMTs for broadband high-power amplifier design
Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O. | Conference Paper |
| 2011 | Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R. | Conference Paper |
| 2011 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Design and modelling challenges for advanced class-S digital transmitters
Quay, R.; Maroldt, S. | Conference Paper |
| 2011 | Design and realisation of a 50 W GaN class-E power amplifier
Sochor, P.- L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R. | Conference Paper |
| 2011 | Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2011 | Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Journal Article |
| 2011 | A high-power dual-gate GaN switching-amplifier in the GHz-range
Heck, S.; Brackle, A.; Berroth, M.; Maroldt, S.; Quay, R. | Conference Paper |
| 2011 | A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Brueckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Bruckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, W.; Kiefer, R.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | Multiband doherty RF power amplifier
Jüschke, P.; Wiegner, D.; Luz, G.; Machinal, R.; Pascht, A.; Quay, R. | Conference Paper |
| 2011 | Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, A.O. | Journal Article |
| 2011 | Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M. | Conference Paper |
| 2011 | Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O. | Conference Paper |
| 2011 | Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
Maier, S.; Wiegner, D.; Zierdt, M.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R. | Conference Paper |
| 2011 | A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology
Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O. | Conference Paper |
| 2010 | AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2010 | AlGaN/GaN HEMTs for high voltage applications
Benkhelifa, F.; Krausse, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications
Do, M.-N.; Seelmann-Eggebert, M.; Quay, R.; Langrez, D.; Cazaux, J.-L. | Conference Paper |
| 2010 | AlGaN/GaN-based power amplifiers for mobile radio applications: A review from the system supplier's perspective
Wiegner, D.; Luz, G.; Jüschke, P.; Machinal, R.; Merk, T.; Seyfried, U.; Templ, W.; Pascht, A.; Quay, R.; Raay, F. van | Journal Article |
| 2010 | Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Quay, R.; Müller, S.; Ambacher, O. | Journal Article |
| 2010 | Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M.; Dammann, M.; Polyakov, V.M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O. | Journal Article |
| 2010 | Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R. | Journal Article, Conference Paper |
| 2010 | Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Journal Article |
| 2010 | Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O. | Journal Article |
| 2010 | Gallium nitride RF-devices. An overview on the development activities in Europe
Quay, R.; Mikulla, M. | Conference Paper |
| 2010 | GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R. | Conference Paper |
| 2010 | GaN devices for communication applications: Evolution of amplifier architectures
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S. | Journal Article |
| 2010 | GaN power FETs for next generation mobile communication systems
Musser, M.; Walcher, H.; Maier, T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O. | Journal Article |
| 2010 | Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs
Kühn, J.; Waltereit, P.; Raay, F. van; Aidam, R.; Quay, R.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2010 | High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Journal Article, Conference Paper |
| 2010 | Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R. | Journal Article |
| 2010 | Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O. | Conference Paper |
| 2010 | Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T. | Journal Article |
| 2010 | Reliability status of GaN transistors and MMICs in Europe
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; Wel, P.J. van der; Rödle, T.; Bourgeois, F.; Riepe, K. | Conference Paper |
| 2010 | Repeatable submicron AlGaN/GaN devices and MMICs
Quay, R.; Waltereit, P. | Conference Paper |
| 2010 | Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R. | Journal Article |
| 2009 | 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
Sun, H.F.; Alt, A.R.; Benedickter, H.; Bolognesi, C.R.; Feltin, E.; Carlin, J.-F.; Gonschorek, M.; Grandjean, N.; Maier, T.; Quay, R. | Journal Article |
| 2009 | AlGaN/GaN HEMTs and MMICs for mm-wave power operation in space
Quay, R.; Heijningen, M. van | Conference Paper |
| 2009 | Design of highly-efficient GaN x-band-power-amplifier MMICs
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2009 | Design of X-band GaN MMICs using field plates
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2009 | Development of AlGaN/GaN HEMTS with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Musser, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Conference Paper, Journal Article |
| 2009 | Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P. | Conference Paper |
| 2009 | Gallium nitride MMICs for mm-wave power operation
Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A. | Journal Article |
| 2009 | GaN HEMT and MMIC development at Fraunhofer IAF: Performance and reliability
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Müller, S.; Musser, M.; Kühn, J.; Raay, F. van; Seelmann-Eggebert, M.; Mikulla, M.; Ambacher, O.; Rijs, F. van; Rödle, T.; Riepe, K. | Journal Article |
| 2009 | Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F. | Journal Article |
| 2009 | Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R. | Journal Article |
| 2009 | Halbleiterstruktur
Lim, T.; Aidam, R.; Kirste, L.; Quay, R. | Patent |
| 2009 | High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O. | Conference Paper |
| 2009 | Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
Waltereit, P.; Müller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; Köhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O. | Journal Article |
| 2009 | L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2009 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Journal Article, Conference Paper |
| 2009 | Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, M.; Cäsar, M.; Waltereit, P.; Bronner, W.; Konstanzer, H.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K. | Conference Paper |
| 2009 | Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications
Suijker, E.M.; Rodenburg, M.; Hoogland, J.A.; Heijningen, M. van; Seelmann-Eggebert, M.; Quay, R.; Brueckner, P.; Vliet, F.E. van | Conference Paper |
| 2009 | A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R. | Conference Paper |
| 2009 | X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Journal Article |
| 2008 | Balanced microstrip AlGaN/GaN HEMT power amplifier MMIC for X-band applications
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thumm, M. | Conference Paper |
| 2008 | Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T. | Conference Paper |
| 2008 | Gallium nitride electronics
Quay, R. | Book |
| 2008 | GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M. | Conference Paper |
| 2008 | High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G. | Journal Article |
| 2008 | High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Rijs, F. van; Rödle, T.; Riepe, K. | Conference Paper |
| 2008 | Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö. | Conference Paper |
| 2008 | Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R. | Conference Paper |
| 2008 | A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al. | Conference Paper |
| 2007 | GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2007 | Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S. | Conference Paper |
| 2007 | Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E. | Conference Paper |
| 2007 | Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S. | Conference Paper |
| 2007 | Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2007 | A systematic state-space approach to large-signal transistor modeling
Seelmann-Eggebert, M.; Merkle, T.; Raay, F. van; Quay, R.; Schlechtweg, M. | Journal Article |
| 2006 | 20W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R. | Conference Paper |
| 2006 | Advanced high power amplifier chain for X-band T/R-modules based on GaN MMICs
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2006 | Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M. | Conference Paper |
| 2006 | Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2006 | Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R. | Conference Paper |
| 2006 | GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G. | Journal Article |
| 2006 | InP DHBT based IC technology for over 80 Gbit/s data communications
Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Conference Paper, Journal Article |
| 2006 | InP DHBT-based monolithically integrated CDR/DEMUX IC operating at 80 Gbit/s
Makon, R.E.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2006 | Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W. | Conference Paper |
| 2006 | Load pull characterization of GaN/AlGaN HEMTs
Schuberth, C.; Arthaber, H.; Mayer, M.; Magerl, G.; Quay, R.; Raay, F. van | Conference Paper |
| 2006 | Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Conference Paper, Journal Article |
| 2006 | Two-stage GaN based multiband power amplifier for software defined radio applications
Naß, T.; Wiegner, D.; Seyfried, U.; Templ, W.; Weber, S.; Wörner, S.; Klose, P.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Kappeler, O.; Kiefer, R. | Conference Paper |
| 2006 | X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs
Raay, F. van; Quay, R.; Kiefer, R.; Bronner, W.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2006 | X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Journal Article, Conference Paper |
| 2005 | 80 Gbit/s monolithically integrated clock and data recovery circuit with 1:2 DEMUX using InP-based DHBTs
Makon, R.E.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
Schneider, K.; Driad, R.; Makon, R.E.; Massler, H.; Ludwig, M.; Quay, R.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2005 | A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2005 | Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz
Makon, R.E.; Driad, R.; Schneider, K.; Massler, H.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2005 | GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band
Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G. | Conference Paper |
| 2005 | Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L. | Journal Article |
| 2005 | High Power High bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Walcher, H.; Kappeler, O.; Seelmann-Eggebert, M.; Muller, S.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G. | Conference Paper |
| 2005 | InP DHBT-based IC technology for high-speed data communications
Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2005 | InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth
Schneider, K.; Driad, R.; Makon, R.E.; Tessmann, A.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M. | Conference Paper |
| 2005 | A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2005 | Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs
Makon, R.E.; Lang, M.; Driad, R.; Schneider, K.; Ludwig, M.; Aidam, R.; Quay, R.; Schlechtweg, M.; Weimann, G. | Journal Article |
| 2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Conference Paper |
| 2005 | Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2004 | Analysis and simulation of heterostructure devices
Palankovski, V.; Quay, R. | Book |
| 2004 | Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz
Makon, R.E.; Schneider, K.; Driad, R.; Lang, M.; Aidam, R.; Quay, R.; Weimann, G. | Conference Paper |
| 2004 | Linearisation issues in microwave amplifiers
O`Droma, M.S.; Portilla, J.; Bertran, E.; Donati, S.; Brazil, T.J.; Rupp, M.; Quay, R. | Conference Paper |
| 2004 | Reliability of 70 nm metamorphic HEMTs
Dammann, M.; Leuther, A.; Quay, R.; Meng, M.; Konstanzer, H.; Jantz, W.; Mikulla, M. | Journal Article |
| 2004 | Robust GaN HEMT low-noise amplifier MMICs for X-band applications
Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Quay, R.; Ramberger, S.; Massler, H.; Schlechtweg, M. | Journal Article |
| 2003 | AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
Quay, R.; Weimann, G. | Journal Article |
| 2003 | AlGaN/GaN HEMTs on SiC: Towards power operation at V-band
Quay, R.; Tessmann, A.; Kiefer, R.; Weber, R.; Raay, F. van; Kuri, M.; Riessle, M.; Massler, H.; Müller, S.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G. | Journal Article |
| 2003 | Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J. | Conference Paper |
| 2003 | Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology
Seemann, K.; Ramberger, S.; Tessmann, A.; Quay, R.; Schneider, J.; Riessle, M.; Walcher, H.; Kuri, M.; Kiefer, R.; Schlechtweg, M. | Conference Paper |
| 2003 | High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s
Quay, R.; Schlechtweg, M.; Leuther, A.; Lang, M.; Nowotny, U.; Kappeler, O.; Benz, W.; Ludwig, M.; Leich, M.; Driad, R.; Bronner, W.; Weimann, G. | Conference Paper |
| 2003 | Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications
Raay, F. van; Quay, R.; Kiefer, R.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2003 | Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications
Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G. | Conference Paper |
| 2002 | A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Massler, H.; Quay, R.; Ramberger, S.; Schlechtweg, M. | Conference Paper |
| 2002 | AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2002 | AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | Analysis and simulation of high electron mobility transistors
Quay, R. | Dissertation |
| 2002 | Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R. | Conference Paper |
| 2002 | Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2001 | Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S. | Journal Article |
| 2001 | Nonlinear electronic transport and device performance of HEMTs
Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S. | Journal Article |
| 2001 | Optimization of High-Speed SiGe HBTs
Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S. | Conference Paper |
| 2001 | A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S. | Conference Paper |
| 2000 | Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R. | Conference Paper |
| 2000 | A global self-heating model for device simulation
Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S. | Conference Paper |
| 2000 | III/V device optimization by physics-based S-parameter simulation
Quay, R.; Palankovski, V.; Reuter, R.; Schlechtweg, M.; Kellner, W.; Selberherr, S. | Conference Paper |
| 2000 | Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S. | Conference Paper |
| 2000 | Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S. | Conference Paper |
| 2000 | Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S. | Conference Paper |
| 2000 | A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S. | Journal Article |
| 1999 | S-parameter simulation of HBTs on Gallium-Arsenide
Palankovski, V.; Quay, R.; Selberherr, S.; Schultheis, R. | Conference Paper |
| 1999 | Thermal simulations of III/V HEMTs
Quay, R.; Reuter, R.; Grasser, T.; Selberherr, S. | Conference Paper |
| 1997 | Automatic laser based material identification and marking, a new approach
Quay, R.; Sattmann, R.; Noll, R. | Conference Paper |