Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2021Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver
Journal Article
2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Journal Article
2020Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2020The two-dimensional electron gas of the In₂O₃ surface: Enhanced thermopower, electrical transport properties, and its reduction by adsorbates or compensating acceptor doping
Papadogianni, Alexandra; Rombach, Julius; Berthold, Theresa; Polyakov, Vladimir M.; Krischok, Stefan; Himmerlich, Marcel; Bierwagen, Oliver
Preprint
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Journal Article
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Conference Paper
2012The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
Al Mustafa, N.; Granzner, R.; Polyakov, Vladimir M.; Racko, J.; Mikolasek, M.; Breza, J.; Schwierz, F.
Journal Article