Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2003Modulation of the electronic properties of GaN films by surface acoustic waves
Camacho, J.; Santos, P.V.; Alsina, F.; Ramsteiner, M.; Ploog, K.H.; Cantarero, A.; Obloh, H.; Wagner, J.
Journal Article
2002Anharmonicity of the E2(high) and A(1)(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
2002Strain in buried quantum wires: Analytical calculations and x-ray diffraction study
Kaganer, V.; Jenichen, B.; Paris, G.; Ploog, K.H.; Konovalov, O.; Mikulik, P.; Arai, S.
Journal Article
2001Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
2000Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors
: Ploog, K.H.; Tränkle, G.; Weimann, G.
Conference Proceedings
2000Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment
Dekorsy, T.; Bartels, A.; Kurz, H.; Ghosh, A.; Jönsson, L.; Wilkens, J.; Köhler, K.; Hey, R.; Ploog, K.
Journal Article
2000Coupled Bloch-phonon oscillations in semiconductor superlattices
Dekorsy, T.; Bartels, A.; Kurz, H.; Köhler, K.; Hey, R.; Ploog, K.
Journal Article
1997Spin flip of excitons in GaAs quantum wells
Snoke, D.W.; Rühle, W.W.; Köhler, K.; Ploog, K.
Journal Article
1996Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si
Däweritz, L.; Schützendübe, P.; Stahrenberg, K.; Maier, M.; Ploog, K.
Conference Paper
1996Tailoring of Si doping layers in GaAs during molecular beam epitaxy
Däweritz, L.; Kostial, H.; Ramsteiner, M.; Klann, R.; Schützendübe, P.; Stahrenberg, K.; Behrend, J.; Hey, R.; Maier, M.; Ploog, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Baumberg, J.J.; Heberle, A.P.; Köhler, K.; Ploog, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.; Ploog, K.
Conference Paper
1995Coexistence of the Franz-Keldysh and Wannier-Stark effect in semiconductor superlattices
Linder, N.; Schmidt, K.H.; Geisselbrecht, W.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.
Journal Article
1995Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Maier, M.; Mazuelas, A.; Lane, P.A.; Martin, T.; Whitehouse, C.R.; Ploog, K.
Journal Article
1995Excitonic effects in miniband and Wannier-Stark absorption spectra
Linder, N.; Schmidt, K.H.; Geisselbrecht, W.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.; Fukiwara, K.
Conference Paper
1995Four-wave-mixing theory beyond the semiconductor Bloch equations
Axt, V.M.; Stahl, A.; Mayer, E.J.; Haring Bolivar, P.; Nüsse, S.; Ploog, K.; Köhler, K.
Journal Article
1995High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy
Mazuelas, A.; Maier, M.; Wagner, J.; Fischer, A.; Trampert, A.; Ploog, K.
Journal Article
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Journal Article
1994Coexistence of Wannier-Stark transitions and miniband Franz-Keldysh oscillations in strongly coupled GaAs-AlAs superlattices
Schmidt, K.H.; Linder, N.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.
Journal Article
1994Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type delta-doped GaAs-Be/AlxGa1-xAs double-heterostructures.
Wagner, J.; Richards, D.; Schneider, H.; Fischer, A.; Ploog, K.
Journal Article
1994Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.
Wagner, J.; Ramsteiner, M.; Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Braun, W.; Ploog, K.
Journal Article
1994Infrared and Raman studies of carbon impurities in highly doped MBE AlAs-C.
Davidson, B.R.; Newman, R.C.; Pritchard, R.E.; Robbie, D.A.; Sangster, M.J.L.; Wagner, J.; Fischer, A.; Ploog, K.
Journal Article
1994A local vibrational mode investigation of p-type Si-doped GaAs
Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Wagner, J.; Robbie, D.A.; Silier, I.; Sangster, M.J.L.; Bauser, E.; Braun, W.; Ploog, K.
Journal Article
1994Magneto-photoluminescence excitation spectroscopy in a centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure.
Wagner, J.; Calleja, J.M.; Mestres, N.; Richards, D.; Fischer, A.; Ploog, K.
Journal Article
1994Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K.
Journal Article
1994Resonant quenching of exciton photoluminescence in coupled GaAs/AlAs quantum wells - effect of exciton binding energy.
Schneider, H.; Wagner, J.; Ploog, K.
Journal Article
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Line shape of electroreflectance spectra in semiconductor superlattices
Behn, U.; Grahn, H.T.; Ploog, K.; Schneider, H.
Journal Article
1993Nucleation, relaxation and redistribution of Si layers in GaAs.
Brandt, O.; Crook, G.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Maier, M.; Wagner, J.
Journal Article
1993Observation of extremely long electron-spin-relaxation times in p-type delta-doped GaAs/Al(x)Ga(1-x)As double heterostructures
Schneider, H.; Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Photocurrent and Raman spectroscopy of Stark ladder superlattices with single monolayer AlAs barriers.
Schneider, H.; Ploog, K.; Fischer, A.; Fujiwara, K.; Wagner, J.
Journal Article
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs
Richards, D.; Schneider, H.; Hendorfer, G.; Maier, M.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992The confining potential for carriers in planar doped GaAs and the effect of photoexcitation.
Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Conference Paper
1992Effect of photoexcitation on the surface band bending in delta-doped GaAs:Si/Al0.33Ga0.67As double heterostructures.
Richards, D.; Wagner, J.; Fischer, A.; Ploog, K.
Journal Article
1992Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in delta-doped GaAs-Si.
Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.
Journal Article
1992Electric field-induced delocalization effects in GaAs/AlAs single- and double-period superlattices
Schneider, H.; Fujiwara, K.; Kawashima, K.; Ploog, K.
Conference Paper
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Journal Article
1992Franz-Keldysh oscillations and Wannier-Stark localization in GaAs/AlAs superlattices with single-monolayer AlAs barriers
Fischer, A.; Ploog, K.; Schneider, H.
Journal Article
1992Franz-Keldysh oscillations and Wannier-Stark localization in GaAs/AlAs superlattices.
Schneider, H.; Fischer, A.; Ploog, K.
Conference Paper
1992Interaction of Wannier-Stark ladders in GaAs-AlAs superlattices observed by electroreflectance.
Behn, U.; Grahn, H.T.; Schneider, H.; Ploog, K.
Conference Paper
1992Multiply resonant Raman scattering in Stark ladder superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1992Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures.
Kamp, G.; Obloh, H.; Schneider, J.; Weimann, G.; Ploog, K.
Journal Article
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Conference Paper
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Journal Article
1992Time-resolved four-wave mixing in GaAs/AlAs quantum well structures.
Koch, M.; Feldmann, J.; Plessen, G. von; Meier, T.; Schulze, A.; Thomas, P.; Göbel, E.O.; Köhler, K.; Ploog, K.; Schmitt-Rink, S.
Journal Article
1992Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs.
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Hülsmann, A.; Schneider, J.; Köhler, K.; Moglestue, C.; Ploog, K.; Rosenzweig, J.
Journal Article
1991Effect of spatial localization of dopant atoms of the spacing of electron subbands in delta-doped GaAs-Si.
Richards, D.; Fasol, G.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1991Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
Ruiz, A.; Ploog, K.; Wagner, J.
Journal Article
1991Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1991Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs.
Brandt, O.; Crook, G.E.; Ploog, K.; Maier, M.; Wagner, J.
Journal Article
1991Room-temperature enhancement of electro-optical modulation by resonance-induced exciton mixing in a GaAs/AlAs superlattice.
Ploog, K.; Schneider, H.
Journal Article
1991Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1990Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Conference Paper
1990Electro-optical multistability in GaAs/AlAs superlattices at room temperature.
Grahn, H.T.; Klitzing, K. von; Fujiwara, K.; Ploog, K.; Schneider, H.
Journal Article
1990Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Reimann, K.; Ploog, K.; Köhler, K.
Journal Article
1990Electronic structure of single delta-doped GaAs layers studied by photoluminescence and raman spectroscopy.
Ploog, K.; Wagner, J.
Conference Paper
1990Miniband transport in GaAs-AlAs superlattices.
Grahn, H.T.; Klitzing, K. von; Ploog, K.; Schneider, H.
Conference Paper
1990Nonthermal occupation of higher subbands in semiconductor superlattices via sequential resonant tunneling
Grahn, H.T.; Rühle, W.W.; Klitzing, K. von; Ploog, K.; Schneider, H.
Journal Article
1990Optical detection of resonant tunneling in GaAs/AlAs superlattices.
Grahn, H.T.; Klitzing, K. von; Ploog, K.; Schneider, H.
Conference Paper
1990Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs
Ploog, K.; Fischer, A.; Wagner, J.
Journal Article
1990Resonance-induced delocalization of electrons in GaAs-AlAs supperlattices
Grahn, H.T.; Klitzing, K. von; Ploog, K.; Schneider, H.
Journal Article
1990Triply resonant raman scattering by LO phonons in a Wannier-Stark ladder
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1989Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Successive Wannier-Stark localization and excitonic enhancement of intersubband absorption in a short-period GaAs/AlAs superlattice
Fujiwara, K.; Schneider, H.; Cingolani, R.; Ploog, K.
Journal Article
1988Electrical detection of nuclear magnetic resonance in GaAs-Al(x)Ga(1-x)As heterostructures
Schneider, J.; Dobers, M.; Weimann, G.; Ploog, K.; Klitzing, K. von
Journal Article
1988Overhauser-shift of the ESR in the two-dimensional electron gas of GaAs-AlGaAs-heterostructures
Schneider, J.; Dobers, M.; Weimann, G.; Ploog, K.; Klitzing, K. von
Conference Paper
1988Phonon-drag effect in GaAs-Al(x)Ga(1-x)As heterostructures at very low temperatures
Ruf, C.; Obloh, H.; Junge, B.; Gmelin, E.; Ploog, K.
Journal Article
1987Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
Stolz, W.; Ploog, K.; Wagner, J.
Journal Article
1986Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Stolz, W.; Knecht, J.; Ploog, K.; Wagner, J.
Journal Article
1986Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
Miguel, J.L. de; Ohmori, Y.; Stolz, W.; Tapfer, L.; Ploog, K.; Wagner, J.
Conference Paper
1985Free-exciton luminescence in GaSb quantum wells confined by short-period AISb-GaSb superlattices
Ploog, K.; Ohmori, Y.; Okamoto, H.; Stolz, W.; Wagner, J.
Journal Article
1985Luminescence excitation spectroscopy on Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As quantum-well heterostructures
Stolz, W.; Ploog, K.; Wagner, J.
Journal Article