Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
Reusch, M.; Holc, K.; Pletschen, W.; Kirste, L.; Zukauskaité, A.; Yoshikawa, T.; Iankov, D.; Ambacher, O.; Lebedev, V.
Journal Article
2015Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance
Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.
Journal Article
2015Aluminium nitride membranes with embedded buried IDT electrodes for novel flexural plate wave devices
Reusch, M.; Katus, P.; Holc, K.; Pletschen, W.; Kirste, L.; Zürbig, V.; Iankov, D.; Reindl, L.; Ambacher, O.; Lebedev, V.
Conference Paper
2015Aluminiumnitrid membranen mit vergrabenen IDT für neuartige membranbiegeschwinger
Reusch, M.; Katus, P.; Schilling, C.; Holc, K.; Pletschen, W.; Kirste, L.; Ambacher, O.; Reindl, L.; Lebedev, V.
Conference Paper
2015Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
Pletschen, W.; Linkohr, S.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O.
Conference Paper
2015Tunable multisegment Si(x)N(y)/AlN piezo lenses for wavefront correction
Zürbig, V.; Pätz, D.; Fries, J.; Bichra, M.; Pletschen, W.; Holc, K.; Reusch, M.; Nebel, C.E.; Sinzinger, S.; Ambacher, O.; Lebedev, V.
Conference Paper
2014Elastic properties of ultrathin diamond/AlN membranes
Zürbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.; Ambacher, O.; Lebedev, V.
Journal Article
2014GaN-based micro-LED arrays on flexible substrates for optical cochlear implants
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U.T.
Journal Article
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2014Processing of nanoscale gaps for boron-doped nanocrystalline diamond based MEMS
Iankov, D.; Zürbig, V.; Pletschen, W.; Giese, C.; Iannucci, R.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2013CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors
Linkohr, S.; Pletschen, W.; Schwarz, S.U.; Anzt, J.; Cimalla, V.; Ambacher, O.
Journal Article
2013Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
Heidrich, N.; Knöbber, F.; Polyakov, V.M.; Cimalla, V.; Pletschen, W.; Sah, R.E.; Kirste, L.; Leopold, S.; Hampl, S.; Ambacher, O.; Lebedev, V.
Journal Article
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Journal Article
2013Enhanced mechanical performance of AlN/nanodiamond micro-resonators
Heidrich, N.; Iankov, D.; Hees, J.; Pletschen, W.; Sah, R.E.; Kirste, L.; Zuerbig, V.; Nebel, C.; Ambacher, O.; Lebedev, V.
Journal Article
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2013Laser direct writing of GaN-based light-emitting diodes - the suitable laser source for mesa definition
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Nano-diamond vacuum MEMS for RF applications
Heidrich, N.; Hees, J.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Conference Paper
2013Picosecond pulse generation in monolithic GaN-based multi-section laser diodes
Holc, K.; Weig, T.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwarz, U.T.
Conference Paper
2013Piezo-actuated tunable diamond/AlN micro lenses
Zürbig, V.; Pätz, D.; Pletschen, W.; Hees, J.; Sah, R.E.; Kirste, L.; Heidrich, N.; Cimalla, V.; Nebel, C.; Ambacher, O.; Lebedev, V.
Conference Paper
2013Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
Hees, J.; Heidrich, N.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Williams, O.A.; Lebedev, V.; Nebel, C.E.; Ambacher, O.
Journal Article
2013Piezoelectrically actuated diamond cantilevers for high-frequency applications
Heidrich, N.; Zürbig, V.; Iankov, D.; Pletschen, W.; Sah, R.E.; Raynor, B.; Kirste, L.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article
2013Transparent diamond electrodes for tunable micro-optical devices
Zürbig, V.; Pletschen, W.; Hees, J.; Sah, R.E.; Kirste, L.; Heidrich, N.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article
2012(Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T.
Conference Paper
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012Electrostatically coupled vibration modes in unimorph complementary mircocantilevers
Lebedev, V.; Heidrich, N.; Knöbber, F.; Sah, R.E.; Pletschen, W.; Raynor, B.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.
Journal Article
2012Evaluation of AlN material properties through vibration analysis of thin membranes
Lebedev, V.; Knöbber, F.; Heidrich, N.; Sah, R.E.; Pletschen, W.; Cimalla, V.; Ambacher, O.
Journal Article
2012Evaluation on AIN material properties through vibration analysis of thin membranes
Lebedev, V.; Knöbber, F.; Heidrich, N.; Sah, R.E.; Pletschen, W.; Cimalla, V.; Ambacher, O.
Journal Article, Conference Paper
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures
Linkohr, S.; Pletschen, W.; Polyakov, V.M.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Kirste, L.; Müller, S.; Ambacher, O.; Cimalla, V.
Journal Article, Conference Paper
2012Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Journal Article
2012Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Conference Paper
2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs
Linkohr, S.; Pletschen, W.; Kirste, L.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Polyakov, V.M.; Müller, S.; Ambacher, O.; Cimalla, V.
Journal Article, Conference Paper
2011AlN based microgenerators for powering implantable sensor devices
Bludau, O.; Röhlig, C.-C.; Knöbber, F.; Kirste, L.; Sah, R.E.; Driad, R.; Pletschen, W.; Lebedev, V.; Cimalla, V.
Journal Article, Conference Paper
2011AlN-basierte mikroelektromechanische Strukturen für Implantate
Heidrich, N.; Knöbber, F.; Hampl, S.; Pletschen, W.; Sah, R.E.; Cimalla, V.; Lebedev, V.; Ambacher, O.
Conference Paper
2011Biocompatible AlN-based piezo energy harvesters for implants
Heidrich, N.; Knöbber, F.; Sah, R.E.; Pletschen, W.; Hampl, S.; Cimalla, V.; Lebedev, V.
Conference Paper
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Journal Article, Conference Paper
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Conference Paper
2011Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Journal Article
2011Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, W.; Kiefer, R.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2011Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air
Wang, C.Y.; Becker, R.W.; Passow, T.; Pletschen, W.; Köhler, K.; Cimalla, V.; Ambacher, O.
Journal Article
2011Quaternary barriers for improved performance of GaN-based HEMTs
Lim, T.; Aidam, R.; Waltereit, P.; Pletschen, W.; Quay, R.; Kirste, L.; Ambacher, O.
Journal Article
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Journal Article
2010Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O.
Conference Paper
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
Baeumler, M.; Gütle, F.; Polyakov, V.M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.J.; Wel, P.J. van der; Klappe, J.; Rödle, T.
Journal Article
2010Near-UV LEDs for integrated InO-based ozone sensors
Wang, C.Y.; Cimalla, V.; Kunzer, M.; Passow, T.; Pletschen, W.; Kappeler, O.; Wagner, J.; Ambacher, O.
Journal Article, Conference Paper
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2010Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F.
Journal Article
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Conference Paper
2009Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Maier, M.; Köhler, K.; Kunzer, M.; Pletschen, W.; Wagner, J.
Journal Article
2009Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Journal Article, Conference Paper
2008(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.
Conference Paper
2008Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M.; Pletschen, W.; Waltereit, P.; Bronner, W.; Quay, R.; Müller, S.; Mikulla, M.; Ambacher, O.; Wel, P.J. van der; Murad, S.; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.; Fagerlind, M.; Sveinbjörnsson, E.Ö.
Conference Paper
2007Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article
2007Recessed gate processing for GaN/AlGaN-HEMTs
Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2007Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2005A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Benkhelifa, F.; Raynor, B.; Pletschen, W.; Kuri, M.; Massler, H.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Journal Article
2005Elektrisch leitfaehiger Bondpad
Schlotter, P.; Schmidt, R.; Pletschen, W.
Patent
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Journal Article
2004III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J.
Journal Article
2003High-resolution QWIP FPAs for the 8-12 µm and 3-5 µm regimes
Schneider, H.; Fleißner, J.; Rehm, R.; Walther, M.; Pletschen, W.; Koidl, P.; Weimann, G.; Ziegler, J.; Breiter, R.; Cabanski, W.
Conference Paper
2003InAs/(GaIn)Sb short period superlattices for IR detection
Fuchs, F.; Schmitz, J.; Pletschen, W.; Koidl, P.; Weimann, G.
Conference Paper
2003Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Conference Paper
2003Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors
Yang, Q.K.; Pfahler, C.; Schmitz, J.; Pletschen, W.; Fuchs, F.
Conference Paper
2002(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.
Conference Paper
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Conference Paper
2002Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Journal Article
2002Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
Stephan, T.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Obloh, H.; Müller, S.; Köhler, K.; Wagner, J.
Journal Article
2002Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
Yang, Q.K.; Fuchs, F.; Schmitz, J.; Pletschen, W.
Journal Article
2002Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2001Etch-depth dependence of laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Conference Paper
2001High-brightness laser diodes using angular filtering by total reflection
Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Conference Paper
2001Optoelectronic properties of Photodiodes for the mid- and far-infrared based on the InAs/GaSB/AlSb materials family
Fuchs, F.; Bürkle, L.; Hamid, R.; Herres, N.; Pletschen, W.; Sah, R.E.; Kiefer, R.; Schmitz, J.
Conference Paper
2001Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
2001Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2001Wannier-Stark localization in InAs/(GaIn)Sb superlattice diodes
Bürkle, L.; Fuchs, Frank; Ahlswede, E.; Pletschen, Wilfried; Schmitz, J.
Journal Article
2001Wide-bandgap electronic devices. Proceedings
: Shul, R.J.; Ren, F.; Pletschen, W.; Murakami, M.
Conference Proceedings
2000Control of the residual doping of InAs/(GaIn)Sb infrared superlattices
Bürkle, L.; Fuchs, F.; Schmitz, J.; Pletschen, W.
Journal Article
2000Electrical Characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 µm range
Bürkle, L.; Fuchs, F.; Kiefer, R.; Pletschen, W.; Sah, R.E.; Schmitz, J.
Conference Paper
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Conference Paper
2000Long wavelength infrared GaAs/AlGaAs quantum well infrared photodetectors for 630x512 focal plane array camera systems with 20 mK NETD
Walther, M.; Fleißner, J.; Schneider, H.; Schönbein, C.; Pletschen, W.; Diwo, E.; Schwarz, K.; Braunstein, J.; Koidl, P.; Ziegler, J.; Cabanski, W.
Conference Paper
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000QWIP FPAs for high-performance thermal imaging
Schneider, H.; Walther, M.; Schönbein, C.; Rehm, R.; Fleißner, J.; Pletschen, W.; Braunstein, J.; Koidl, P.; Weimann, G.; Ziegler, J.; Cabanski, W.
Journal Article
199925-W CW high-brightness tapered semiconductor laser-array
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Journal Article
1999InAs/Ga(1-x)In(x)Sb infrared superlattice diodes. Correlation between surface morphology and electrical performance
Fuchs, F.; Bürkle, L.; Pletschen, W.; Schmitz, J.; Walther, M.; Güllich, H.; Herres, N.; Müller, S.
Conference Paper
199820 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G.
Conference Paper
1998Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.
Journal Article
1998GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties
Pletschen, W.; Bachem, K.H.; Chertouk, M.; Bürkner, S.; Braunstein, J.
Conference Paper
1998High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures
Mikulla, M.; Chazan, P.; Schmitt, A.; Morgott, S.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Journal Article
1998III-V semiconductor quantum well and superlattice detectors
Walther, M.; Fuchs, F.; Schneider, H.; Fleissner, J.; Schmitz, J.; Pletschen, W.; Braunstein, J.; Ziegler, J.; Cabanski, W.; Koidl, P.; Weinmann, G.
Conference Paper
1998Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain) epitaxial layer structures
Mikulla, M.; Schmitt, A.; Chazan, P.; Wetzel, A.; Walther, M.; Kiefer, R.; Pletschen, W.; Braunstein, J.; Weimann, G.
Conference Paper
1998Magneto-optics of InAs/Ga1-xInxSb infrared superlattice diodes
Fuchs, F.; Ahlswede, E.; Weimar, U.; Pletschen, W.; Schmitz, J.; Hartung, M.; Jager, B.; Szmulowicz, F.
Journal Article
1998Optical and electrical properties of InAs/Ga(1-x)In(x)Sb photodiodes for infrared detection
Fuchs, F.; Pletschen, W.; Weimar, U.; Schmitz, J.; Walther, M.; Wagner, J.; Koidl, P.
Conference Paper
1997Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes
Czotscher, K.; Weisser, S.; Länge, R.; Benz, W.; Burkhard, H.; Hillmer, H.; Steinhagen, F.; Kiefer, R.; Lösch, R.; Pletschen, W.; Walcher, H.; Walther, M.; Rosenzweig, J.
Conference Paper
1997High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
Fuchs, F.; Weimer, U.; Pletschen, W.; Schmitz, J.; Ahlswede, E.; Walther, M.; Wagner, J.; Koidl, P.
Journal Article
1997InAs/(GaIn)Sb superlattices for infrared detection
Wagner, J.; Fuchs, F.; Schmitz, J.; Pletschen, W.; Weimar, U.; Herres, N.; Walther, M.; Koidl, P.
Conference Paper
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Journal Article
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Conference Paper
1995Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1994AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1994AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties
Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J.
Conference Paper
1994High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.
Pletschen, W.; Bachem, K.H.; Rothemund, W.; Winkler, K.; Fekete, D.
Conference Paper
1994K-band dielectric resonator oscillator using a GaInP/GaAs HBT
Güttich, U.; Leier, H.; Marten, A.; Riepe, K.; Pletschen, W.; Bachem, K.H.
Conference Paper
1993AlGaInP/GaInAs/GaAs MODFET devices - candidates for optoelectronic integrated circuits
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Journal Article
1993High speed selfaligned GaInP/GaAs HBBTs.
Leier, H.; Marten, A.; Pletschen, W.; Tasker, P.J.; Bachem, K.H.
Journal Article
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992High speed non-selfaligned GaInP/GaAs-TEBT.
Zwicknagl, P.; Schaper, U.; Schleicher, L.; Siweris, H.; Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar transistors
Bachem, K.H.; Pletschen, W.; Winkler, K.; Lauterbach, T.; Maier, M.
Conference Paper
1992A novel GaAs bipolar transistor structure with GaInP-hole injection blocking barrier.
Pletschen, W.; Bachem, K.H.; Lauterbach, T.
Conference Paper
1992OMVPE-grown AlxGa1-x0.5In0.5P/InGaAs MODFET structures - growth procedure and hall properties.
Bachem, K.H.; Fekete, D.; Pletschen, W.; Rothemund, W.; Winkler, K.
Journal Article
1991Emitter-base electron transport in GaInP/GaAs heterojunction bipolar transistors and tunnel emitter bipolar transistors.
Bachem, K.H.; Pletschen, W.; Lauterbach, T.; Shur, M.
Conference Paper
1991Plasma etching damage in GaAs studied by resonant Raman scattering.
Pletschen, W.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
1990Influence of dry etch conditions on the properties of Schottky contacts to n-GaAs
Pletschen, W.; Bachem, K.H.; Hornung, J.; Kaufel, G.; Köhler, K.
Conference Paper
1990Influence of plasma and ion beams on the electrical properties on n-GaAs Schottky diodes.
Pletschen, W.; Bachem, K.H.
Journal Article
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Journal Article
1989Properties of WSix-Schottky diodes on n-type GaAs sputtered under UHV background conditions
Pletschen, W.; Kaufel, G.; Maier, M.; Olander, E.; Wiegert, J.; Bachem, K.H.; Rupprecht, H.S.
Conference Paper