Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Conference Paper
2019Simulationsgestützte Effizienzoptimierung von industriellen Kaltwassersystemen mit thermischen Speichern
Puls, Philipp
: Pichler, Peter; Müller, Karsten
Dissertation
2018Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter
Conference Paper
20173D simulation of silicon-based single-electron transistors
Klüpfel, Fabian J.; Pichler, Peter
Conference Paper
2017Platinum diffusion for advanced silicon power devices
Badr, Elie
: Pichler, Peter; Wellmann, Peter
Dissertation
2017Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling
Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard
Journal Article
2016Empirical cluster modeling revisited
Pichler, Peter
Conference Paper
2016Gettering and defect engineering in semiconductor technology XVI
: Pichler, Peter (Hrsg.)
Conference Proceedings
2016Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2016Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter
Conference Paper
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktroyia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Journal Article
2015Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus
Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter
Journal Article
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Journal Article
2015Role of defects in the dopant diffusion in Si
Pichler, Peter
Book Article
2015Simulation and modeling of silicon carbide devices
Uhnevionak, Viktroyia
: Pichler, Peter; Weigel, Robert
Dissertation
2015Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements
Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald
Conference Paper
2014Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.
Journal Article, Conference Paper
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Journal Article
2014Deep energy levels of platinum-hydrogen complexes in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Conference Paper
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Conference Paper
2014Modeling platinum diffusion in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Journal Article
2014Modeling the annealing of dislocation loops in implanted c-Si solar cells
Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter
Journal Article
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Journal Article, Conference Paper
2014Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter
Journal Article
2014Simulation of the boron build-up formation during melting laser thermal annealing
Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.
Journal Article, Conference Paper
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2014Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules
Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter
Conference Paper
2013Anomalous impurity segregation and local bonding fluctuation in l-Si
Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.
Journal Article
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Conference Paper
2013A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter
Journal Article
2013Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.
Conference Paper
2013Extended model for platinum diffusion in silicon
Badr, E.; Pichler, P.; Schmidt, G.
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2013Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.
Journal Article, Conference Paper
2013Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.
Conference Paper
2013On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Conference Paper
2013On the strain induced by arsenic into silicon
Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de
Conference Paper
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Conference Paper
2013On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening
Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.
Conference Paper
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Conference Paper
2012Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.
Conference Paper, Journal Article
2012Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.
Conference Paper
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Journal Article, Conference Paper
2012Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred
Patent
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Presentation
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Journal Article, Conference Paper
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Journal Article, Conference Paper
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Journal Article, Conference Paper
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Conference Paper
2010Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.
Journal Article, Conference Paper
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Journal Article, Conference Paper
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2010Review of stress effects on dopant solubility in silicon and silicon-germanium layers
Bennett, N.S.; Ahn, C.; Cowern, N.E.B.; Pichler, P.
Conference Paper
2010Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.
Journal Article, Conference Paper
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2008Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.
Conference Paper, Journal Article
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.
Journal Article
2008Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.
Journal Article
2008Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing
Martinez-Limia, A.; Pichler, P.; Lerch, W.; Paul, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.
Journal Article
2008Front-end junction and contact formation in future silicon/germanium based devices. Preface
Cristianoa, F.; Lauwers, A.; Pichler, P.; Feudel, T.; Windil, W.
Conference Paper, Journal Article
2008Modeling and simulation atomistic process simulation and memory modeling
Sonoda, K.; Pichler, P.
Journal Article, Conference Paper
2008Modeling and simulation of advanced annealing processes
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Book Article
2008Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Conference Paper
2008On a computationally efficient approach to boron-interstitial clustering
Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Journal Article, Conference Paper
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Conference Paper
2008Segregation of antimony to Si/SiO2 interfaces
Steen, C.; Pichler, P.; Ryssel, H.
Journal Article
2008Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes
Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.
Conference Paper, Journal Article
2007Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.
Conference Paper
2007Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon
Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.
Journal Article
2007Characterization of the pile-up of As at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.
Conference Paper
2007Characterization of the Segregation of Arsenic at the Interface SiO2/Si
Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.
Conference Paper
2007Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches
Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.
Conference Paper
2007Experimental and theoretical results of dopant activation by a combination of spike and flash annealing
Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.
Conference Paper
2007On a computationally efficient approach to Boron-interstitial clustering
Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Conference Paper
2007Upcoming challenges for process modeling
Pichler, P.
Conference Paper
2006Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Journal Article
2006Flash Annealing Technology for USJ: Modeling and Metrology
Gelpey, J.; McCoy, S.; Camm, D.; Lerch, W.; Paul, S.; Pichler, P.; Borland, J.O.; Timans, P.
Conference Paper
2006Pattern Effects with the Mask Off
Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.
Conference Paper
2006Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.
Conference Paper
2006Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.
Book Article
2005Ab initio identification of the nitrogen diffusion mechanism in silicon
Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.
Journal Article
2005Advanced activation of ultra-shallow junctions using flash-assisted RTP
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.
Conference Paper, Journal Article
2004Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments
Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.
Conference Paper
2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Conference Paper
2004Effect of oxygen on the diffusion of nitrogen implanted in silicon
Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.
Journal Article
2004Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.
Conference Paper
2004Intrinsic point defects, impurities, and their diffusion in silicon
Pichler, P.
Book
2004On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Conference Paper
2004A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Journal Article
2004Preface to the special issue on the EMRS 2004 Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering"
Mannino, G.; Feudel, T.; Pichler, P.; Servidori, M.
Conference Paper
2004Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.
Conference Paper
2004Silicon Front-End Junction Formation - Physics and Technology
: Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W.
Conference Proceedings
2003Diffusion and electrical activation of indium in silicon
Scalese, S.; Italia, M.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Barozzi, M.; Solmi, S.; Pichler, P.
Journal Article
2003Indium in silicon: A study on diffusion and electrical activation
Scalese, S.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Solmi, S.; Pichler, P.
Conference Paper
2003Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds
Pichler, P.
Conference Paper
2003Transient-diffusion effects
Stiebel, D.; Pichler, P.
Journal Article
2002Current status of models for transient phenomena in dopant diffusion and activation
Pichler, P.; Stiebel, D.
Journal Article
2002Current understanding and modeling of boron-interstitial clusters
Pichler, P.
Conference Paper
2002Determination of aluminum diffusion parameters in silicon
Krause, O.; Pichler, P.; Ryssel, H.
Journal Article
2002Properties of vacancies in silicon determined from laser-annealing experiments
Pichler, P.
Conference Paper
2001A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Cowern, N.E.B.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper
2000Modelling of intrinsic aluminum diffusion for future power devices
Krause, O.; Pichler, P.; Ryssel, H.
Conference Paper
2000Vacancy-Nitrogen Complexes in Float-Zone Silicon
Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
1999Extraction of vacancy parameters from outdiffusion of zinc from silicon
Pichler, P.
Conference Paper
1999Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1999On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1998Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon
Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.
Journal Article
1998Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Book Article
1998On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.
Conference Paper
1998Recombination of point defects via extended defects and its influence
Stiebel, D.; Pichler, P.
Conference Paper
1998A reinterpretation of platinum-diffusion experiments
Pichler, P.
Conference Paper
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Journal Article
1997Distortion of SIMS profiles due to ion beam mixing
Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.
Conference Paper
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1997Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Journal Article
1997Vacancy-assisted oxygen precipitation phenomena in Si
Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.
Journal Article
1996Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.
Book Article
19956th International Conference on Simulation of Semiconductor Devices and Processes. SISDEP '95. Proceedings
: Ryssel, H.; Pichler, P.
Conference Proceedings
1995Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Conference Paper
1995Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs
Bauer, H.; Pichler, P.; Ryssel, H.
Journal Article
1995Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.
Journal Article
1995Platinum diffusion at low temperatures
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
1994Calculation of the transport matrix for the coupled diffusion of dopants and vacancies
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1994Dynamic behavior of arsenic clusters in silicon
Bauer, H.; Pichler, P.; Ryssel, H.
Conference Paper
1994Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Conference Paper
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1994Practical aspects of ion beam analysis of semiconductor structures
Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.
Journal Article
1994Simulation of buried layer experiments containing all four dopant species
Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.
Conference Paper
1993Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Conference Paper
1993Diffusion and activation of arsenic implanted at high temperature in silicon
Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.
Journal Article
1993Dopant migration caused by point defect gradients
Pichler, P.; List, S.
Conference Paper
1992Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects
Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.
Journal Article
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1992Thermally activated dopant diffusion in crystalline silicon at 200 degree C.
Pichler, P.; Orlowski, M.
Journal Article
1991Radiation-enhanced diffusion during high-temperature ion implantation
Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.
Journal Article
1990Optimization of parameters for process simulation
Dürr, R.; Pichler, P.
Journal Article
1990Simulation of silicon semiconductor processing
Pichler, P.; Ryssel, H.
Journal Article
1990Trends in practical process simulation.
Pichler, P.; Ryssel, H.
Journal Article
1989The influence of point defect concentration on the diffusion of gold in silicon
Zimmermann, H.; Pichler, P.
Conference Paper
1989One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Conference Paper
1989Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Conference Paper
1988Influence of initial conditions on point defect diffusion. Impact on models
Dürr, R.; Pichler, P.
Conference Paper