Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Detection and electrical characterization of defects at the SiO2/4H-SiC interface
Krieger, M.; Beljakow, S.; Zippelius, B.; Afanas´ev, V.V.; Bauer, A.J.; Nanen, Y.; Kimoto, T.; Pensl, G.
Conference Paper
2010Silicon carbide and related materials 2009
: Bauer, A.J.; Friedrichs, P.; Krieger, M.; Pensl, G.; Rupp, R.; Seyller, T.
Conference Proceedings
2009Effect of impurities on solar cell parameters in intentionally contaminated multicrystalline silicon
Reis, I.E.; Riepe, S.; Koch, W.; Bauer, J.; Beljakowa, S.; Breitenstein, O.; Habenicht, H.; Kreßner-Kiel, D.; Pensl, G.; Schön, J.; Seifert, W.
Conference Paper
2009Influence of growth rate and C/Si-ratio on the formation of point and extended defects in 4H-SiC homoepitaxial layers investigated by DLTS
Zippelius, B.; Krieger, M.; Weber, H.B.; Pensl, G.; Kallinger, B.; Friedrich, J.; Thomas, B.
Conference Paper
2008Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P
Beljakowa, S.; Pensl, G.; Rommel, M.
Conference Paper
2007Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P
Beljakowa, S.; Pensl, G.; Rommel, M.
Poster
2003Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method
Semmelroth, K.; Schmid, F.; Karg, D.; Pensl, G.; Maier, M.; Greulich-Weber, S.; Spaeth, J.M.
Conference Paper
2002Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
Laube, M.; Schmid, F.; Pensl, G.; Wagner, G.; Linnarsson, M.; Maier, M.
Journal Article
2002Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Conference Paper
2002Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Journal Article
1997Doping of SiC by implantation of Boron and Aluminum
Troffer, T.; Schadt, M.; Frank, T.; Itoh, H.; Pensl, G.; Heindl, J.; Strunk, H.P.; Maier, M.
Journal Article
1996Electrical properties of silicon carbide polytypes
Pensl, G.; Afanasev, V.V.; Bassler, M.; Schadt, M.; Troffer, T.; Heindl, J.; Strunk, H.P.; Maier, M.; Choyke, W.J.
Conference Paper
1994The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres.
Newman, R.C.; Davidson, B.R.; Addinall, R.; Murray, R.; Emmert, J.W.; Wagner, J.; Götz, W.; Roos, G.; Pensl, G.
Journal Article
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Journal Article