Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Conference Paper
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Evaluation of an advanced dual hard mask stack for high resolution pattern transfer
Paul, Jan; Rudolph, M.; Riedel, S.; Thrun, X.; Wege, S.; Hohle, C.
Conference Paper
2013High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures
Weinreich, Wenke; Rudolph, Matthias; Koch, Johannes; Paul, Jan; Seidel, Konrad; Riedel, Stefan; Sundqvist, Jonas
Conference Paper
2012Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Muller, Stefan; Muller, Johannes; Paul, Jan; Sundquist, Jonas
Conference Paper
2012Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon
Paul, Jan; Riedel, Stefan; Rudolph, Matthias; Wege, Stephan; Czernohorsky, Malte; Sundqvist, Jonas; Hohle, Christoph; Beyer, Volkhard
Journal Article, Conference Paper
2010Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
Beug, M. Florian; Melde, Thomas; Czernohorsky, Malte; Hoffmann, Raik; Paul, Jan; Knöfler, Roman; Tilke, Armin T.
Journal Article
2010Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas
Conference Paper, Journal Article
2009Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard
Conference Paper
2009Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T.
Conference Paper
2009Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas
Journal Article
2009TaN metal gate damage during high-k (Al2O3) high-temperature etch
Paul, Jan; Beyer, Volkhard; Michalowski, Pawel Piotr; Beug, M. Florian; Bach, Lars; Ackermann, Marco; Wege, S.; Tilke, Armin T.; Chan, N.; Mikolajick, Thomas; Bewersdorff-Sarlette, Ulrike; Knöfler, Roman; Czernohorsky, Malte; Ludwig, C.
Conference Paper, Journal Article