Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation
Clausner, André; Schlipf, Simon; Kurz, G.; Otto, M.; Paul, J.; Giering, Kay-Uwe; Warmuth, Jens; Lange, André; Jancke, Roland; Aal, A.; Rosenkranz, Rüdiger; Gall, Martin; Zschech, Ehrenfried
Conference Paper
2018Development of a high resolution magnetic field position sensor system based on a through silicon via first integration concept
Zoschke, Kai; Oppermann, H.; Paul, J.; Knoll, H.; Braun, F.-J.; Saumer, M.; Theis, M.; Frank, P.; Lenkl, A.; Klose, F.
Conference Paper
2018Prediction of SRAM reliability under mechanical stress induced by harsh environments
Warmuth, Jens; Giering, Kay-Uwe; Lange, André; Clausner, André; Schlipf, Simon; Kurz, Gottfried; Otto, Michael; Paul, Jens; Jancke, Roland; Aal, Andreas; Gall, Martin; Zschech, Ehrenfried
Conference Paper
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Conference Paper
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2016Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays
Mueller, S.; Slesazeck, S.; Henker, S.; Flachowsky, S.; Polakowski, P.; Paul, J.; Smith, E.; Müller, J.; Mikolajick, T.
Journal Article, Conference Paper
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2015Hochauflösende Magnetfeld-Positionssensoren
Paul, J.; Knoll, H.; Lenkl, A.; Tide, R.; Theis, M.; Saumer, M.; Vetter, C.; Piorra, A.; Meyners, D.; Lofink, F.; Fichtner, S.; Wagner, B.; Zoschke, K.
Conference Paper
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Conference Paper
2014Impact of scaling on the performance of HfO2-based ferroelectric field effect transistors
Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müller, S.; Slesazeck, S.; Schroeder, U.; Boschke, R.; Bentum, R. van; Mikolajick, T.
Journal Article
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
201315 days electron beam exposure for manufacturing of large area silicon based NIL master
Thrun, X.; Choi, K.-H.; Freitag, M.; Gutsch, M.; Hohle, C.; Paul, J.; Rudolph, M.; Steidel, K.
Journal Article
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Evaluation of an advanced dual hard mask stack for high resolution pattern transfer
Paul, Jan; Rudolph, M.; Riedel, S.; Thrun, X.; Wege, S.; Hohle, C.
Conference Paper
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T.
Journal Article
2013High resolution patterning for sub 30 nm technology nodes using a ceramic based dual hard mask
Paul, J.; Rudolph, M.; Riedel, S.; Thrun, X.; Beyer, V.; Wege, S.; Hohle, C.
Conference Paper
2013High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures
Weinreich, Wenke; Rudolph, Matthias; Koch, Johannes; Paul, Jan; Seidel, Konrad; Riedel, Stefan; Sundqvist, Jonas
Conference Paper
2013Improvement of the resistance of titanium aluminides to environmental embrittlement
Masset, P.J.; Bleicher, F.; Bortolotto, L.; Geiger, G.; Kolitsch, A.; Langlade, C.; Paul, J.; Pelic, B.; Pyczak, F.; Rafaja, D.; Schumacher, P.; Schütze, M.; Wolf, G.; Yankov, R.A.
Conference Paper
2013Scaling and optimization of high-density integrated Si-capacitors
Weinreich, W.; Seidel, K.; Rudolph, M.; Koch, J.; Paul, J.; Riedel, S.; Sundqvist, J.; Steidel, K.; Gutsch, M.; Beyer, V.; Hohle, C.
Conference Paper
2012Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Muller, Stefan; Muller, Johannes; Paul, Jan; Sundquist, Jonas
Conference Paper
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon
Paul, Jan; Riedel, Stefan; Rudolph, Matthias; Wege, Stephan; Czernohorsky, Malte; Sundqvist, Jonas; Hohle, Christoph; Beyer, Volkhard
Journal Article, Conference Paper
2011Influence of metal gate and capping film stress on TANOS cell performance
Czernohorsky, M.; Melde, T.; Beyer, V.; Beug, M.F.; Paul, J.; Hoffmann, R.; Knöfler, R.; Tilke, A.T.
Journal Article, Conference Paper
2011TaN and Al2O3 sidewall gate-etch damage influence on program, erase, and retention of sub-50-nm TANOS nand flash memory cells
Beug, M.F.; Melde, T.; Paul, J.; Knoefler, R.
Journal Article
2010Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
Beug, M. Florian; Melde, Thomas; Czernohorsky, Malte; Hoffmann, Raik; Paul, Jan; Knöfler, Roman; Tilke, Armin T.
Journal Article
2010Characterization of anomalous erase effects in 48 nm TANOS memory cells
Loehr, D.-A.; Hoffmann, R.; Naumann, A.; Paul, J.; Seidel, K.; Czernohorsky, M.; Beyer, V.
Conference Paper
2010An empirical model describing the MLC retention of charge trap flash memories
Melde, T.; Hoffmann, R.; Yurchuk, E.; Paul, J.; Mikolajick, T.
Conference Paper
2010Impact of the storage layer charging on random telegraph noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells
Seidel, K.; Hoffman, R.; Naumann, A.; Paul, J.; Löhr, D.-A.; Czernohorsky, M.; Beyer, V.
Conference Paper
2010Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas
Conference Paper, Journal Article
2010Patterning of deep silicon trenches using a novel hardmask concept with ultra-thin E-Beam resist
Paul, J.; Riedel, S.; Wege, S.; Beyer, V.; Kücher, P.
Abstract
2009Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard
Conference Paper
2009Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability
Seidel, K.; Müller, T.; Brandt, T.; Hoffmann, R.; Löhr, D.-A.; Melde, T.; Czernohorsky, M.; Paul, J.; Beyer, V.
Conference Paper
2009Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T.
Conference Paper
2009Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas
Journal Article
2009TaN metal gate damage during high-k (Al2O3) high-temperature etch
Paul, Jan; Beyer, Volkhard; Michalowski, Pawel Piotr; Beug, M. Florian; Bach, Lars; Ackermann, Marco; Wege, S.; Tilke, Armin T.; Chan, N.; Mikolajick, Thomas; Bewersdorff-Sarlette, Ulrike; Knöfler, Roman; Czernohorsky, Malte; Ludwig, C.
Conference Paper, Journal Article
2003Verfahren zum Herstellen textiler Vorformlinge aus textilen Halbzeugen
Ulrich, E.; Paul, J.
Patent