Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019AlGaN avalanche Schottky diodes with high Al-content
Watschke, Lars; Passow, Thorsten; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Leone, Stefano; Rehm, Robert; Ambacher, Oliver
Journal Article, Conference Paper
2018Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver
Journal Article
2018Laser repair of defects in GaN LEDs
Delmdahl, Ralph; Passow, Thorsten; Kunzer, Michael; Binder, Michael
Journal Article
2018Ultraviolet laser ablation as technique for defect repair of GaN‑based light‑emitting diodes
Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim
Journal Article
2014Densification of thin aluminum oxide films by thermal treatments
Cimalla, V.; Baeumler, M.; Kirste, L.; Prescher, M.; Christian, B.; Passow, T.; Benkhelifa, F.; Bernhardt, F.; Eichapfel, G.; Himmerlich, M.; Krischok, S.; Pezoldt, J.
Journal Article
2014Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Journal Article
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2014Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung
Aidam, Rolf; Däubler, Jürgen; Passow, Thorsten
Patent
2013Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Journal Article
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy
Eisenhardt, A.; Eichapfel, G.; Himmerlich, M.; Knübel, A.; Passow, T.; Wang, C.Y.; Benkhelifa, F.; Aidam, R.; Krischok, S.
Journal Article
2011Aluminum-germanium wafer bonding of (AlGaIn)N thin film light-emitting diodes
Gossler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Koehler, K.; Schwarz, U.T.; Wagner, J.
Abstract
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Journal Article, Conference Paper
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Conference Paper
2011High quality AlGaN epilayers grown on sapphire using SiNx interlayers
Forghani, K.; Klein, M.; Lipski, F.; Schwaiger, S.; Hertkorn, J.; Leute, R.A.R.; Scholz, F.; Feneberg, M.; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Gutt, R.; Passow, T.
Conference Paper, Journal Article
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2011Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air
Wang, C.Y.; Becker, R.W.; Passow, T.; Pletschen, W.; Köhler, K.; Cimalla, V.; Ambacher, O.
Journal Article
2010Near-UV LEDs for integrated InO-based ozone sensors
Wang, C.Y.; Cimalla, V.; Kunzer, M.; Passow, T.; Pletschen, W.; Kappeler, O.; Wagner, J.; Ambacher, O.
Journal Article, Conference Paper
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2010Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Conference Paper
2008(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.
Conference Paper
2007Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article
2007Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties
Passow, T.; Li, S.; Feinäugle, P.; Vallaitis, T.; Leuthold, J.; Litvinov, D.; Gerthsen, D.; Hetterich, M.
Journal Article