Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009Deposition of niobium nitride thin films from Tert-Butylamido-Tris-(Diethylamido)-Niobium by a modified industrial MOCVD reactor
Thiede, T.B.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Barreca, D.; Gasparotto, A.; Fischer, R.A.
Journal Article
2008Evaluation of MOCVD grown niobium nitride films as gate electrode for advanced CMOS technology
Thiede, T.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Fischer, R.A.
Conference Paper
2007MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2] and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}]
Baunemann, A.; Lemberger, M.; Bauer, A.J.; Parala, H.; Fischer, R.A.
Journal Article
2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2005Chemistry of mixed ligand all nitrogen coordinated Ta, Hf, and W precursors for metal nitride MOCVD
Baunemann, A.; Rische, D.; Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Fischer, R.A.
Poster
2005MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper
2005MOCVD of cunductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper