Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2010Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.
Journal Article
2010High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Journal Article, Conference Paper
2009High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2009A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2008Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R.
Conference Paper
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2007Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.
Conference Paper
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2006Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R.
Conference Paper
2004Analysis and simulation of heterostructure devices
Palankovski, V.; Quay, R.
Book
2001Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Journal Article
2001Nonlinear electronic transport and device performance of HEMTs
Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S.
Journal Article
2001Optimization of High-Speed SiGe HBTs
Palankovski, V.; Röhrer, G.; Wachmann, E.; Kraft, J.; Löffler, B.; Cervenka, J.; Quay, R.; Grasser, T.; Selberherr, S.
Conference Paper
2001A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.
Conference Paper
2000Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.
Conference Paper
2000A global self-heating model for device simulation
Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000III/V device optimization by physics-based S-parameter simulation
Quay, R.; Palankovski, V.; Reuter, R.; Schlechtweg, M.; Kellner, W.; Selberherr, S.
Conference Paper
2000Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.
Conference Paper
2000Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.
Conference Paper
2000A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.
Journal Article
1999S-parameter simulation of HBTs on Gallium-Arsenide
Palankovski, V.; Quay, R.; Selberherr, S.; Schultheis, R.
Conference Paper