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| 2020 | FeFET: A versatile CMOS compatible device with game-changing potential
Beyer, S.; Dünkel, S.; Trentzsch, M.; Müller, J.; Hellmich, A.; Utess, D.; Paul, J.; Kleimaier, D.; Pellerin, J.; Müller, S.; Ocker, J.; Benoist, A.; Zhou, H.; Mennenga, M.; Schuster, M.; Tassan, F.; Noack, M.; Pourkeramati, A.; Müller, F.; Lederer, M.; Ali, T.; Hoffmann, R.; Kämpfe, T.; Seidel, K.; Mulaosmanovic, H.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S. | Conference Paper |
| 2020 | Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
Mulaosmanovic, H.; Müller, F.; Lederer, M.; Ali, T.; Hoffmann, R.; Seidel, K.; Zhou, H.; Ocker, J.; Mueller, S.; Dunkel, S.; Kleimaier, D.; Muller, J.; Trentzsch, M.; Beyer, S.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S. | Journal Article |
| 2018 | A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S. | Conference Paper |
| 2017 | Novel ferroelectric FET based synapse for neuromorphic systems
Mulaosmanovic, H.; Ocker, J.; Müller, S.; Noack, M.; Müller, J.; Polakowski, P.; Mikolajick, T.; Slesazeck, S. | Conference Paper |
| 2017 | Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan | Journal Article |
| 2016 | A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B. | Conference Paper |
| 2016 | High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Müller, J.; Polakowski, P.; Müller, S.; Mulaosmanovic, H.; Ocker, J.; Mikolajick, T.; Slesazeck, S.; Flachowsky, S.; Trentzsch, T. | Conference Paper |
| 2016 | Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T. | Conference Paper |
| 2015 | Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T. | Conference Paper |
| 2015 | Investigation of the reliability degradation of scaled SONOS memory transistors
Ocker, J.; Slesazeck, S.; Hoffmann, R.; Beyer, V.; Skouris, A.; Srowik, R.; Buschbeck, S.; Günther, S.; Mikolajick, T. | Conference Paper |
| 2015 | On the voltage scaling potential of SONOS non-volatile memory transistors
Ocker, J.; Slesazeck, S.; Mikolajick, T.; Buschbeck, S.; Günther, S.; Yurchuk, E.; Hoffmann, R.; Beyer, V. | Conference Paper |
| 2014 | Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors
Ocker, J.; Kupke, S.; Slesazeck, S.; Mikolajick, T.; Erben, E.; Drescher, M.; Naumann, A.; Lazarevic, F.; Leitsmann, R. | Conference Paper |