Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Shape-controlled platinum nanocrystals on boron-doped diamond
Gao, F.; Yang, N.; Obloh, H.; Nebel, C.E.
Journal Article
2013Size-controllable and homogeneous platinum nanoparticles on diamond using wet chemically assisted electrodeposition
Gao, F.; Yang, N.; Smirnov, W.; Obloh, H.; Nebel, C.E.
Journal Article
2013Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes
Kato, H.; Wolfer, M.; Schreyvogel, C.; Kunzer, M.; Müller-Sebert, W.; Obloh, H.; Yamasaki, S.; Nebel, C.E.
Journal Article
2012Diamond nanophotonics
Beha, K.; Fedder, H.; Wolfer, M.; Becker, M.C.; Siyushev, P.; Jamali, M.; Batalov, A.; Hinz, C.; Hees, J.; Kirste, L.; Obloh, H.; Gheeraert, E.; Naydenov, B.; Jakobi, I.; Dolde, F.; Pezzagna, S.; Twittchen, D.; Markham, M.; Dregely, D.; Giessen, H.; Meijer, J.; Jelezko, F.; Nebel, C.E.; Bratschitsch, R.; Leitenstorfer, A.; Wrachtrup, J.
Journal Article
2012Fractional surface termination of diamond by electrochemical oxidation
Hoffmann, R.; Obloh, H.; Tokuda, N.; Yang, N.; Nebel, C.E.
Journal Article
2011The creation of a biomimetic interface between boron-doped diamond and immobilized proteins
Hoffmann, R.; Kriele, A.; Obloh, H.; Tokuda, N.; Smirnov, W.; Yang, N.; Nebel, C.E.
Journal Article
2011Diamond ultra-microelectrode arrays for achieving maximum Faradaic current with minimum capacitive charging
Yang, N.; Smirnov, W.; Hees, J.J.; Hoffmann, R.; Kriele, A.; Obloh, H.; Müller-Sebert, W.; Nebel, C.E.
Journal Article
2011Integrated all-diamond ultramicroelectrode arrays: Optimization of faradaic and capacitive currents
Smirnov, W.; Yang, N.; Hoffmann, R.; Hees, J.; Obloh, H.; Müller-Sebert, W.; Nebel, C.E.
Journal Article
2011Matrix-addressable infrared filters for the protection of highly sensitive detectors
Obloh, H.; Müller-Sebert, W.; Brink, D.; Fehrenbach, W.; Wörner, E.; Wild, C.; Nebel, C.E.
Conference Paper
2011Nanocrystalline diamond nanoelectrode arrays and ensembles
Hees, J.J.; Hoffmann, R.; Kriele, A.; Smirnov, W.; Obloh, H.; Glorer, K.; Raynor, B.; Driad, R.; Yang, N.; Williams, O.A.; Nebel, C.E.
Journal Article
2010Controlled incorporation of mid-to-high Z transition metals in CVD diamond
Biener, M.M.; Biener, J.; Kucheyev, S.O.; Wang, Y.M.; El-Dasher, B.S.; Teslich, N.E.; Hamza, A.V.; Obloh, H.; Müller-Sebert, W.; Wolfer, M.; Fuchs, F.; Grimm, M.; Kriele, A.; Wild, C.
Conference Paper, Journal Article
2010Doping of single crystalline diamond with nickel
Wolfer, M.; Obloh, H.; Williams, O.A.; Leancu, C.-C.; Kirste, L.; Gheeraert, E.; Nebel, C.E.
Journal Article
2010Electrochemical hydrogen termination of boron-doped diamond
Hoffmann, R.; Kriele, A.; Obloh, H.; Hees, J.J.; Wolfer, M.; Smirnov, W.; Yang, N.; Nebel, C.E.
Journal Article
2009Nickel doping of nitrogen enriched CVD-diamond for the production of single photon emitters
Wolfer, M.; Kriele, A.; Williams, O.A.; Obloh, H.; Leancu, C.-C.; Nebel, C.E.
Conference Paper, Journal Article
2007Diamond components with integrated abrasion sensor for tribological applications
Pernice, W.; Obloh, H.; Müller-Sebert, W.; Wild, C.; Koidl, P.; Urban, G.
Conference Paper, Journal Article
2006DIATEX - Fadenkontaktierende Bauteile aus CVD-Diamant: Neue Wege zur Lösung der Verschleißprobleme in der Textilindustrie
Rosiepen, C.; Schmenk, B.; Obloh, H.; Müller-Sebert, W.; Gries, T.
Conference Paper
2006Schaltbares Infrarotfilter
Wild, C.; Woerner, E.; Obloh, H.
Patent
2003Modulation of the electronic properties of GaN films by surface acoustic waves
Camacho, J.; Santos, P.V.; Alsina, F.; Ramsteiner, M.; Ploog, K.H.; Cantarero, A.; Obloh, H.; Wagner, J.
Journal Article
2002(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.
Conference Paper
2002Anharmonicity of the E2(high) and A(1)(LO) phonons in GaN studied by temperature-dependent Raman spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
2002Characterization of nitrides by electron-paramagnetic- resonance (EPR) and optically detected magnetic resonance (ODMR)
Glaser, E.R.; Carlos, W.E.; Braga, G.C.B.; Freitas, J.A.; Moore, W.J.; Shanabrook, B.V.; Wickenden, A.E.; Koleske, D.D.; Henry, R.L.; Bayerl, M.W.; Brandt, M.S.; Obloh, H.; Kozodoy, P.; Denbaars, S.P.; Mishra, U.K.; Nakamura, S.; Haus, E.; Speck, J.S.; Nostrand, J.E. van; Sanchez, M.A.; Calleja, E.; Ptak, A.J.; Myers, T.H.; Molnar, R.J.
Journal Article
2002Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
Stephan, T.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Obloh, H.; Müller, S.; Köhler, K.; Wagner, J.
Journal Article
2002Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
Glaser, E.R.; Carlos, W.E.; Braga, G.C.B.; Freitas, J.A.; Moore, W.J.; Shanabrook, B.V.; Henry, R.L.; Wickenden, A.E.; Koleske, D.D.; Obloh, H.; Kozodoy, P.; Denbaars, S.P.; Mishra, U.K.
Journal Article
2002Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Journal Article
2001Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; Köhler, K.
Journal Article
2001Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
Giehler, M.; Ramsteiner, M.; Waltereit, P.; Brandt, O.; Ploog, K.H.; Obloh, H.
Journal Article
2001Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2001Uniformity and scalability of AlGaN/GaN HEMTS using stepper lithography
Lossy, R.; Hilsenbeck, J.; Wurfl, J.; Obloh, H.
Journal Article
2000Aging behavior of AlGaA/GaN HFETs with advanced ohmic and Schottky contacts
Hilsenbeck, J.; Nebauer, E.; Wurfl, J.; Trankle, G.; Obloh, H.
Journal Article
2000GaN static induction transistor fabrication
Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.
Conference Paper
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Conference Paper
2000Hole conductivity and compensation in epitaxial GaN:Mg layers
Kaufmann, U.; Schlotter, P.; Obloh, H.; Köhler, K.; Maier, M.
Journal Article
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Journal Article
2000Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Würfl, J.; Hilsenbeck, J.; Nebauer, E.; Tränkle, G.; Obloh, H.; Österle, W.
Conference Paper
2000Resonant Raman scattering from buried Al(x)Ga(1-x)N (x < = 0.17) layers in (Al,Ga,In)N heterostructures
Yoshikawa, M.; Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.
Journal Article
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Conference Paper
2000Technology and performance of AlGaN/GaN HEMTs fabricated on 2-inch epitaxy for microwave power applications
Lossy, R.; Hilsenbeck, J.; Würfl, J.; Köhler, K.; Obloh, H.
Conference Paper
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Journal Article
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1999Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs (LUCOLEDs)
Schlotter, P.; Baur, J.; Hielscher, C.; Kunzer, M.; Obloh, H.; Schmidt, R.; Schneider, J.
Journal Article
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1999In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Manz, C.; Kunzer, M.; Obloh, H.; Ramakrishnan, A.; Kaufmann, U.
Journal Article
1999Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides
Heppel, S.; Wirth, R.; Off, J.; Scholz, F.; Hangleiter, A.; Obloh, H.; Wagner, J.; Kirchner, C.; Kamp, M.
Journal Article
1999Optically detected magnetic-resonance of shallow donor shallow acceptor and deep (2.8-3.2 ev) recombination from Mg-doped GaN
Glaser, E.R.; Kennedy, T.A.; Freitas, J.A.; Shanabrook, B.V.; Wickenden, A.E.; Koleske, D.D.; Henry, R.L.; Obloh, H.
Journal Article
1999Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B.
Journal Article
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1999X-ray analysis of the texture of heteroepitaxial gallium nitride films
Herres, N.; Obloh, H.; Bachem, K.H.; Helmig, K.
Journal Article
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1998Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures
Kunzer, M.; Kaufmann, U.; Maier, M.; Obloh, H.
Conference Paper
1998Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P.
Journal Article
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article
1997InAs/AlSb/GaSb heterostructures
Wagner, J.; Schmitz, J.; Fuchs, F.; Obloh, H.; Herres, N.; Koidl, P.
Book Article
1997Ionized donor bound excitons in GaN
Santic, B.; Merz, C.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper
1995Compositional and structural analysis of AlSb (As) tunneling barriers in InAs/AlSb (As) / GaSb resonant interband-tunneling structures
Wagner, J.; Schmitz, J.; Obloh, H.; Koidl, P.
Journal Article
1994Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D.
Conference Paper
1994Investigation of magneto-tunneling processes in InAs/AlSb/GaSb based resonant interband tunneling structures
Obloh, H.; Schmitz, J.; Ralston, J.D.
Conference Paper
1994Photoluminescence of InAs/AlSb single quantum wells.
Fuchs, F.; Schmitz, J.; Obloh, H.; Ralston, J.D.; Koidl, P.
Journal Article
1994Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Koidl, P.; Ralston, J.D.
Journal Article
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Journal Article
1992Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures.
Kamp, G.; Obloh, H.; Schneider, J.; Weimann, G.; Ploog, K.
Journal Article
1989Effect of nuclear polarization on the conduction-electron spin resonance in InP
Clerjaud, B.; Gendron, F.; Obloh, H.; Schneider, J.; Wilkening, W.
Journal Article
1988Phonon-drag effect in GaAs-Al(x)Ga(1-x)As heterostructures at very low temperatures
Ruf, C.; Obloh, H.; Junge, B.; Gmelin, E.; Ploog, K.
Journal Article

 

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