Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
Journal Article
2006InP DHBT based IC technology for over 80 Gbit/s data communications
Driad, R.; Makon, R.E.; Schneider, K.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper, Journal Article
2005InP DHBT-based IC technology for high-speed data communications
Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper
2004Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology
Schlechtweg, M.; Leuther, A.; Tessmann, A.; Schwörer, C.; Massler, H.; Reinert, W.; Lang, M.; Nowotny, U.; Kappeler, O.; Walther, M.; Lösch, R.
Conference Paper
2004A novel method to linearise phase response of single-ended to differential converters for high bit rates
Michel, N.; Weber, N.; Humpfer, H.; Nowotny, U.; Lang, M.
Conference Paper
2003High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s
Quay, R.; Schlechtweg, M.; Leuther, A.; Lang, M.; Nowotny, U.; Kappeler, O.; Benz, W.; Ludwig, M.; Leich, M.; Driad, R.; Bronner, W.; Weimann, G.
Conference Paper
2003Integrated circuits based on 300 GHz f(T) metamorphic HEMT technology for millimeter-wave and mixed-signal applications
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Schwörer, C.; Lang, M.; Nowotny, U.; Kappeler, O.
Conference Paper
200266 GHz 2:1 static frequency divider using 100 nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Nowotny, U.; Kappeler, O.; Schlechtweg, M.
Journal Article
2001Analyse und Optimierung eines Flip-Flop in SCFL-Technik mit pseudomorphen HEMTs
Meyer, M.
: Jansen, D. (Prüfer); Nowotny, U. (Prüfer)
Thesis
199840 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T.
Journal Article
1998Mixed signal integrated circuits based on GaAs HEMTs
Thiede, A.; Wang, Z.-G.; Schlechtweg, M.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Hurm, V.; Rieger-Motzer, M.; Ludwig, M.; Sedler, M.; Köhler, K.; Bronner, W.; Hornung, J.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Journal Article
199745 Gbit/s AlGaAs/GaAs HEMT multiplexer IC
Lao, Z.; Nowotny, U.; Thiede, A.; Hurm, V.; Kaufel, G.; Rieger-Motzer, M.; Bronner, W.; Seibel, J.; Hülsmann, A.
Journal Article
1997GaAs HEMT ICs for 40 Gbit/s data transmission systems
Lang, M.; Nowotny, U.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1997High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
Lao, Z.; Thiede, A.; Nowotny, U.; Schlechtweg, M.; Hurm, V.; Bronner, W.; Hornung, J.; Rieger-Motzer, M.; Kaufel, G.; Köhler, K.; Hülsmann, A.
Conference Paper
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Conference Paper
1997Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Bushehri, E.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Hornung, J.; Kaufel, G.; Raynor, B.; Schneider, J.
Journal Article
199517 GHz-bandwidth 17dB-gain 0.3 micrometer-HEMT low power limiting amplifier
Wang, Z.-G.; Berroth, M.; Hurm, V.; Lang, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1995Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1995Monolithic integrated optoelectronic circuits for optical links
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
19947.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3 micro-meter gate length well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
1994An 800 MSps Track and hold using a 0.3 µm AlGaAs-HEMT-technology
Rohmer, G.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.; Sauerer, J.
Conference Paper
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199328-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U.
Journal Article
1993A 3.6 Gigasample/s 5 bit analog to digital converter using 0.3 mu m AlGaAs-HEMT technology
Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.
Conference Paper
19937.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 mym gate length quantum well HEMTs
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1993Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.
Wang, Z.-G.; Berroth, M.; Nowotny, U.; Ludwig, M.; Hofmann, P.; Hülsmann, A.; Köhler, K.; Raynor, B.; Schneider, J.
Journal Article
199210-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Hurm, V.; Lang, M.; Ludwig, G.; Hülsmann, A.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wang, Z.-G.; Wennekers, P.
Conference Paper
199210-Gb/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs technology.
Hülsmann, A.; Schneider, J.; Kaufel, G.; Köhler, K.; Nowotny, U.; Raynor, B.; Wennekers, P.
Journal Article
199215 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.
Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Wang, Z.-G.
Journal Article
199216 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J.
Journal Article
199218 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.
Nowotny, U.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Wang, Z.-G.
Journal Article
199110 Gbit/s bit-synchronizer with automatic retiming clock alignement using Quantum Well AlGaAs/GaAs/AlGaAs technology
Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.; Wennekers, P.
Conference Paper
199110 Gbit/s low-power bit synchroniser with automatic retiming phase alignment.
Wennekers, P.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Köhler, K.
Journal Article
199111,6 Gbps 1 to 4 demultiplexer using double pulse doped Quantum Well GaAs/AlGaAs transistors.
Lang, M.; Nowotny, U.; Berroth, M.
Journal Article
1991A 2.5 ns 8x8-b parallel multiplier using 0.5 mym GaAs/GaAlAs heterostructure field effect transistors
Hurm, V.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
199120 Gbit/s 2 to 1 multiplexer using 0.3 mym gate length double pulse doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Lang, M.; Hurm, V.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
1990Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K.
Conference Paper