Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1997Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H.
Journal Article
1997Ionized donor bound excitons in GaN
Santic, B.; Merz, C.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K.
Journal Article
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper
1997Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H.
Conference Paper
1996MOCVD-Züchtung und Charakterisierung von Nitridischen Verbindungshalbleitern
Niebuhr, R.
Dissertation
1996Resonant multi-LO-phonon Raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Niebuhr, R.; Merz, C.; Bachem, K.H.; Amano, H.; Akasaki, I.
Conference Paper
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Journal Article
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Conference Paper