Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2001Carbon-doped MOCVD InP is semi-insulating up to 700°C
Newman, R.C.; Davidson, B.R.; Wagner, J.; Sangster, M.J.L.; Leigh, R.S.
Journal Article
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Journal Article
1998Di-carbon complexes in AlAs and GaAs
Latham, C.D.; Jones, R.; Wagner, J.; Davidson, B.R.; Newman, R.C.; Button, C.C.; Briddon, P.R.; Öberg, S.
Journal Article
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Journal Article
1996Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations
Newman, R.C.; Ashwin, M.J.; Fahy, M.R.; Hart, L.; Holmes, S.N.; Roberts, C.; Zhang, X.; Wagner, J.
Journal Article
1996Raman spectroscopy of doping sheets and heterointerfaces in III-V semiconductor structures
Wagner, J.; Schmitz, J.; Newman, R.C.; Roberts, C.
Journal Article
1995Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Maier, M.; Mazuelas, A.; Lane, P.A.; Martin, T.; Whitehouse, C.R.; Ploog, K.
Journal Article
1995Dynamics of the H-CAs complex in GaAs determined from Raman measurements
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Journal Article
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Conference Paper
1995Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.
Journal Article
1995Silicon incorporation in GaAs. From delta-doping to monolayer insertion
Wagner, J.; Newman, R.C.; Roberts, C.
Journal Article
1994The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres.
Newman, R.C.; Davidson, B.R.; Addinall, R.; Murray, R.; Emmert, J.W.; Wagner, J.; Götz, W.; Roos, G.; Pensl, G.
Journal Article
1994Bonding of H-CAs pairs in Al(x)Ga(1-x)As alloys
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Fuchs, F.; Jones, R.; Öberg, S.
Journal Article
1994Incorporation of silicon in -311-A and -111-A GaAs grown by molecular beam epitaxy.
Wagner, J.; Ramsteiner, M.; Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Braun, W.; Ploog, K.
Journal Article
1994Infrared and Raman studies of carbon impurities in highly doped MBE AlAs-C.
Davidson, B.R.; Newman, R.C.; Pritchard, R.E.; Robbie, D.A.; Sangster, M.J.L.; Wagner, J.; Fischer, A.; Ploog, K.
Journal Article
1994A local vibrational mode investigation of p-type Si-doped GaAs
Ashwin, M.J.; Fahy, M.R.; Newman, R.C.; Wagner, J.; Robbie, D.A.; Silier, I.; Sangster, M.J.L.; Bauser, E.; Braun, W.; Ploog, K.
Journal Article
1994The transition from dilute aluminium delta-structures to an AlAs monolayer in GaAs and a comparison with Si delta-doping
Ashwin, M.J.; Fahy, M.R.; Hart, L.; Newman, R.C.; Wagner, J.
Journal Article
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.
Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.
Journal Article
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Journal Article
1991Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.
Journal Article
1991Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy.
Murray, R.; Newman, R.C.; Beall, R.B.; Harris, J.J.; Maier, M.; Wagner, J.
Journal Article
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Journal Article
1989Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy.
Schneider, J.; Mooney, P.M.; Lagowski, J.; Matsui, M.; Beard, D.R.; Newman, R.C.; Dischler, B.; Seelewind, H.
Journal Article
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Journal Article
1986Electronic raman scattering from residual acceptors in GaAs
Seelewind, H.; Newman, R.C.; Maguire, J.; Wagner, J.
Conference Paper