Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Correlation study of different CDM testers and CC-TLP
Weber, Johannes; Kaschani, Karim T.; Gieser, Horst; Wolf, Heinrich; Maurer, Linus; Famulok, Nicolai; Moser, Reinhard; Rajagopal, Krishna; Sellmayer, Michael; Sharma, Anmol; Tamm, Heiko
Conference Paper
2017Simulation and experimental investigation of slew rate related ESD failures of CDM and CC-TLP
Weber, Johannes; Kaschani, Karim T.; Gieser, Horst; Wolf, Heinrich; Maurer, Linus; Famulok, Nicolai; Moser, Reinhard; Rajagopal, Krishna; Sellmayer, Michael; Sharma, Anmol; Tamm, Heiko
Conference Paper
2014GaN-based micro-LED arrays on flexible substrates for optical cochlear implants
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U.T.
Journal Article
2014Lichtemittierende Diode und Verfahren zur Herstellung einer lichtemittierenden Diode
Kunzer, Michael; Moser, Rüdiger
Patent
2014Verfahren und Vorrichtung zur Herstellung eines Halbleiterbauelements
Moser, Rüdiger; Kunzer, Michael; Goßler, Christian; Schwarz, Ulrich
Patent
2013Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Laser direct writing of GaN-based light-emitting diodes - the suitable laser source for mesa definition
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Laser-µ-Bearbeitung von GaN-basierten Leuchtdioden mit ultrakurzen Laserpulsen
Moser, R.
Dissertation
2013Laser-µ-Bearbeitung von GaN-basierten Leuchtdioden mit ultrakurzen Laserpulsen
Moser, R.
: Ambacher, O. (Ed.)
Dissertation
2013Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012High-power 2.0 µm semiconductor disk laser-influence of lateral lasing
Töpper, T.; Rattunde, Marcel; Kaspar, S.; Moser, R.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Journal Article
2012Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Journal Article
2012Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Conference Paper
2012Line beam laser lift-off approach for sapphire removal
Delmdahl, R.; Paetzel, R.; Brune, J.; Senczuk, R.; Gossler, C.; Moser, R.; Kunzer, M.; Schwarz, U.
Conference Paper
2012Line beam processing for laser lift-off of GaN from sapphire
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U.T.
Journal Article
2011Aluminum-germanium wafer bonding of (AlGaIn)N thin film light-emitting diodes
Gossler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Koehler, K.; Schwarz, U.T.; Wagner, J.
Abstract
2011Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2011Hybrides Planungswerkzeug zur adaptiven Auslegung von Lean-Methoden
Spath, D.; Korge, A.; Krause, T.; Lanza, G.; Jondral, A.; Moser, R.
Journal Article
2011Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching
Moser, R.; Ojha, N.; Kunzer, M.; Schwarz, U.T.
Journal Article
2010GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2009Charakterisierung von langwelligen GaSb-basierenden Halbleiter-Scheibenlasern
Moser, R.
Thesis
2009GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2009A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.
Conference Paper
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Journal Article
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper