| | |
|---|
| 2009 | High-power frequency stabilized tapered diode amplifiers at 1064 nm
Ostendorf, R.; Schilling, C.; Kaufel, G.; Moritz, R.; Wagner, J.; Kochem, G.; Friedmann, P.; Gilly, J.; Kelemen, M.T. | Conference Paper |
| 2009 | Tunable GaAs-based high power tapered amplifiers in an external cavity setup
Schilling, C.; Ostendorf, R.; Kaufel, G.; Moritz, R.; Wagner, J.; Ambacher, O. | Conference Paper |
| 2008 | 10 W high-efficiency high-brightness tapered diode lasers at 976 nm
Ostendorf, R.; Kaufel, G.; Moritz, R.; Mikulla, M.; Ambacher, O.; Kelemen, M.; Gilly, J. | Conference Paper |
| 2008 | High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J. | Conference Paper |
| 2007 | High-power high-brightness lasers
Kelemen, M.T.; Weber, J.; Kaufel, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Journal Article |
| 2007 | Spektral abstimmbares Lasermodul
Fuchs, F.; Moritz, R.; Wild, C.; Wörner, E. | Patent |
| 2006 | 8 W high-efficiency high-brightness tapered diode lasers at 976 nm
Kelemen, M.T.; Weber, J.; Kaufel, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2006 | Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2006 | High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J. | Journal Article |
| 2006 | High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C. | Conference Paper |
| 2005 | Continuous-wave operation of GaInAs/AlGaAsSb quantum cascade lasers
Yang, Q.K.; Bronner, W.; Manz, C.; Moritz, R.; Mann, C.; Kaufel, G.; Köhler, K.; Wagner, J. | Journal Article |
| 2005 | High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2005 | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2005 | Tapered diode lasers at 976nm with 8 W nearly diffraction limited output power
Kelemen, M.T.; Weber, J.; Kaufel, G.; Bihlmann, G.; Moritz, R.; Mikulla, M.; Weimann, G. | Journal Article |
| 2001 | High Power 980 nm Laser Diodes by MBE
Mikulla, M.; Kelemen, M.T.; Walther, M.; Kiefer, R.; Moritz, R.; Weimann, G. | Conference Paper |
| 2000 | High-efficiency high-power InAlGaAs laser diodes at 980 nm
Mikulla, M.; Schmitt, A.; Bihlmann, G.; Weber, B.; Moritz, R.; Müller, S.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1999 | High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Moritz, R.; Müller, S.; Sah, R.E.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1997 | Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
Chazan, P.; Morgott, S.; Mikulla, M.; Kiefer, R.; Bihlmann, G.; Moritz, R.; Daleiden, J.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1991 | Verfahren zur Oberflaechenbehandlung eines Quarzglassubstrates und dessen Anwendung
Brandt, G.; Koidl, P.; Moritz, R. | Patent |
| 1990 | Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements
Moritz, R.; Rothemund, W.; Brandt, G.; Ennen, H. | Journal Article |
| 1985 | Compound formation in the mercury-cadmium-tellurium-oxygen system
Moritz, R.; Brandt, G. | Journal Article |