Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2000A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.
Journal Article
199725 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Thiede, A.; Bosch, R.; Hofmann, P.; Hülsmann, A.; Moglestue, C.; Köhler, K.
Conference Paper
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1995Failure mechanisms in AlGaAs/GaAs HEMTs
Christianson, K.A.; Moglestue, C.; Anderson, W.T.
Journal Article
1995A Monte Carlo Particle Study of Transport and Relaxation in Quantum Well Lasers
Moglestue, C.
Book Article
1994Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.; Köhler, K.
Journal Article
1994Self-consistent Monte Carlo calculation of electron accumulation and charge transport in n-type GaAs field emitters
Moglestue, C.; Gray, H.F.
Journal Article
1994Thermally induced failure in GaAs transistors exposed to alpha particle irradiation
Moglestue, C.; Buot, F.; Anderson, W.T.
Conference Paper
1993Monte Carlo simulation of semiconductor devices
Moglestue, C.
Book
1993Time-resolved photocurrent response of metal-semiconductor-metal photodetectors to double-pulse excitation.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.
Journal Article
1992Electro-optic and photoconductive sampling of ultrafast photodiodes with femtosecond laser pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Book Article
1992Laser beam testing - fast switches for generation of picosecond electrical pulses.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Journal Article
1992Picosecond electron and hole transport in metal-semiconductor-metal photodetectors.
Kuhl, J.; Klingenstein, M.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Journal Article
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Conference Paper
1992Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs.
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Hülsmann, A.; Schneider, J.; Köhler, K.; Moglestue, C.; Ploog, K.; Rosenzweig, J.
Journal Article
1991Characterization of picosecond GaAs metal-semiconductor-metal photodetectors.
Axmann, A.; Schneider, J.; Hülsmann, A.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Moglestue, C.; Rosenzweig, J.
Conference Paper
1991An experimental verfication of the Monte Carlo particle model.
Moglestue, C.
Conference Paper
1991The hot-carrier light emission for GaAs MESFETs
Koch, F.; Herzog, M.; Moglestue, C.; Schneider, J.; Rosenzweig, J.
Conference Paper
1991Limitations of the impulse response of GaAs metal-semiconductor metal photodetectors.
Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Conference Paper
1991Monte Carlo particle simulation of radiation-induced heating in GaAs field-effect transistors.
Buot, F.A.; Anderson, T.; Moglestue, C.
Journal Article
1991Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors.
Moglestue, C.; Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Journal Article
1991Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axmann, A.; Schneider, J.; Hülsmann, A.; Leier, H.; Forchel, A.
Journal Article
1991Transit time limited response of GaAs metal-semiconductor-metal photodiodes.
Klingenstein, M.; Kuhl, J.; Axmann, A.; Moglestue, C.; Rosenzweig, J.
Journal Article
1990Direct observation of the electron and hole contributions in the impulse response of a metal-semiconductor-metal Schottky diode.
Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Leier, H.; Forchel, A.; Rosenzweig, J.
Conference Paper
1990Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.
Moglestue, C.; Zappe, H.P.
Journal Article
1990Monte Carlo particle calculation and direct observation of the electron and hole contribution to the response of a GaAs-metal semiconductor-metal-Schottky diode to a short light pulse
Moglestue, C.; Axmann, A.; Schneider, J.; Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Leier, H.; Forchel, A.; Rosenzweig, J.
Conference Paper
1990Monte Carlo particle study of transport along the hetero interface in a field-effect transistor.
Moglestue, C.
Journal Article
1990Self-consistent Monte Carlo particle modelling of small semiconductor elements.
Moglestue, C.
Journal Article
1989Electromagnetic radiation from hot carriers in FET-devices.
Herzog, M.; Schels, M.; Koch, F.; Moglestue, C.; Rosenzweig, J.
Journal Article