Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019In situ raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries
Krause, Andreas; Tkacheva, Olga; Omar, Ahmad; Langklotz, Ulrike; Giebeler, Lars; Dörfler, Susanne; Fauth, F.; Mikolajick, Thomas; Weber, Walter M.
Journal Article, Conference Paper
2018A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S.
Conference Paper
2018Gating hysteresis as an indicator for silicon nanowire FET biosensor
Ibarlucea, Bergoi; Römhildt, Lotta; Zörgiebel, Felix; Pregl, Sebastian; Vahdatzadeh, Maryam; Weber, Walter M.; Mikolajick, Thomas; Opitz, Jörg; Baraban, Larysa; Cuniberti, Gianaurelio
Journal Article
2017Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions
Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M.; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter Michael
Journal Article
2017Human α-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor
Römhildt, Lotta; Zörgiebel, Felix; Ibarlucea, Bergoi; Vahdatzadeh, Maryam; Baraban, Larysa; Cuniberti, Gianaurelio; Pregl, Sebastian; Weber, Walter M.; Mikolajick, Thomas; Opitz, Jörg
Conference Paper
2017Novel ferroelectric FET based synapse for neuromorphic systems
Mulaosmanovic, H.; Ocker, J.; Müller, S.; Noack, M.; Müller, J.; Polakowski, P.; Mikolajick, T.; Slesazeck, S.
Conference Paper
2017Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits
Trommer, Jens; Heinzig, André; Slesazeck, Stefan; Mühle, Uwe; Löffler, Markus; Walter, Dennis; Mayr, Christian Georg; Mikolajick, Thomas; Weber, Walter Michael
Conference Paper
2017Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan
Journal Article
2016A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.
Conference Paper
2016Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories
Yurchuk, Ekaterina; Müller, Johannes; Müller, Stefan; Paul, Jan; Pesic, Milan; Benthum, Ralf van; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2016Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays
Mueller, S.; Slesazeck, S.; Henker, S.; Flachowsky, S.; Polakowski, P.; Paul, J.; Smith, E.; Müller, J.; Mikolajick, T.
Journal Article, Conference Paper
2016High area capacity lithium-sulfur full-cell battery with prelitiathed silicon nanowire-carbon anodes for long cycling stability
Krause, Andreas; Dörfler, Susanne; Piwko, Markus; Wisser, Florian M.; Jaumann, Tony; Ahrens, Eike; Giebeler, Lars; Althues, Holger; Schädlich, Stefan; Grothe, Julia; Jeffery, Andrea; Grube, Matthias; Brückner, Jan; Martin, Jan; Eckert, Jürgen; Kaskel, Stefan; Mikolajick, Thomas; Weber, Walter M.
Journal Article
2016High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Müller, J.; Polakowski, P.; Müller, S.; Mulaosmanovic, H.; Ocker, J.; Mikolajick, T.; Slesazeck, S.; Flachowsky, S.; Trentzsch, T.
Conference Paper
2016Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U.; Pesic, M.; Schenk, T.; Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Richter, C.; Yurchuk, E.; Khullar, K.; Müller, J.; Polakowski, P.; Grimley, E.D.; LeBeau, J.M.; Flachowsky, S.; Jansen, S.; Kolodinski, S.; Bentum, R. van; Kersch, A.; Künneth, C.; Mikolajick, T.
Conference Paper
2016Status of ferroelectric HfO2 based 1T FeFET memories
Mikolajick, T.; Schroeder, U.; Slesazeck, S.; Müller, S.; Schenk, T.; Müller, J.
Presentation
2015Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H.; Slesazeck, S.; Ocker, J.; Pesic, M.; Müller, S.; Flachowsky, S.; Müller, J.; Polakowski, J.; Paul, J.; Jansen, S.; Kolodinski, S.; Richter, C.; Piontek, S.; Schenk, T.; Kersch, A.; Künneth, C.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2015Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
Müller, J.; Polakowski, P.; Mueller, S.; Mikolajick, T.
Journal Article
2015Ferroelectricity and antiferroelectricity of doped thin HfO2-based films
Park, M.H.; Lee, Y.H.; Kim, H.J.; Kim, Y.J.; Moon, T.; Do Kim, K.; Müller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T.; Hwang, C.S.
Journal Article
2015Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)
Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine
Conference Paper
2015Investigation of the reliability degradation of scaled SONOS memory transistors
Ocker, J.; Slesazeck, S.; Hoffmann, R.; Beyer, V.; Skouris, A.; Srowik, R.; Buschbeck, S.; Günther, S.; Mikolajick, T.
Conference Paper
2015Next-generation ferroelectric memories based on FE-HfO2
Müller, S.; Slesazeck, S.; Mikolajick, T.; Müller, Johannes; Polakowski, Patrick; Flachowsky, S.
Conference Paper
2015On the voltage scaling potential of SONOS non-volatile memory transistors
Ocker, J.; Slesazeck, S.; Mikolajick, T.; Buschbeck, S.; Günther, S.; Yurchuk, E.; Hoffmann, R.; Beyer, V.
Conference Paper
2015Stability and performance of heterogeneous anode assemblies of silicon nanowires on carbon meshes for lithium-sulfur battery applications
Krause, Andreas; Brückner, Jan; Dörfler, Susanne; Wisser, Florian M.; Althues, Holger; Grube, Matthias; Martin, Jan; Grothe, Julia; Mikolajick, Thomas; Weber, Walter Michael
Conference Paper
2015Stabilizing the ferroelectric phase in doped hafnium oxide
Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.
Journal Article
2015Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications
Knebel, Steve; Pešić, Milan; Cho, Kyuho; Chang, Jaewan; Lim, Hanjin; Kolomiiets, Nadiia; Afanasyev, Valeri; Mühle, Uwe; Schröder, Uwe; Mikolajick, Thomas
Journal Article
2015Via hole conditioning in silicon heterojunction metal wrap through solar cells
Dirnstorfer, Ingo; Schilling, Niels; Körner, Stefan; Gierth, Paul; Waltinger, Andreas; Leszczynska, Barbara; Simon, Daniel K.; Gärtner, Jan; Jordan, Paul M.; Mikolajick, Thomas; Dani, Ines; Eberstein, Markus; Rebenklau, Lars; Krause, Jens
Journal Article, Conference Paper
2014Development of silicon heterojunction metal wrap through solar cells
Dirnstorfer, Ingo; Schilling, Niels; Körner, Stefan; Gierth, Paul; Sontag, Detlef; Jordan, Paul M.; Simon, Daniel K.; Fengler, Franz P.G.; Mikolajick, Thomas; Linaschke, Dorit; Dani, Ines; Marcinkowski, Manja; Eberstein, Markus; Rebenklau, Lars; Partsch, Uwe
Conference Paper
2014Doped hafnium oxide - an enabler for ferroelectric field effect transistors
Mikolajick, T.; Müller, S.; Schenk, T.; Yurchuk, E.; Slesazeck, S.; Schröder, U.; Flachowsky, S.; Bentum, R. van; Kolodinski, S.; Polakowski, P.; Müller, J.
Conference Paper
2014Ferroelectric hafnium oxide based materials and devices
Müller, Johannes; Polakowski, Patrick; Müller, Stefan; Mikolajick, Thomas
Conference Paper
2014Ferroelectric hafnium oxide: A game changer to FRAM?
Müller, J.; Polakowski, P.; Riedel, S.; Mueller, S.; Yurchuk, E.; Mikolajick, T.
Conference Paper
2014Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
Martin, D.; Müller, J.; Schenk, T.; Arruda, T.M.; Kumar, A.; Strelcov, E.; Yurchuk, E.; Müller, S.; Pohl, D.; Schröder, U.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of different dopants on the switching properties of ferroelectric hafniumoxide
Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.
Journal Article
2014Impact of scaling on the performance of HfO2-based ferroelectric field effect transistors
Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müller, S.; Slesazeck, S.; Schroeder, U.; Boschke, R.; Bentum, R. van; Mikolajick, T.
Journal Article
2014Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors
Ocker, J.; Kupke, S.; Slesazeck, S.; Mikolajick, T.; Erben, E.; Drescher, M.; Naumann, A.; Lazarevic, F.; Leitsmann, R.
Conference Paper
2014Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, E.; Mueller, S.; Martin, D.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; Müller, J.; Paul, J.; Hoffmann, R.; Sundqvist, J.; Schlösser, T.; Boschke, R.; Bentum, R. van; Trentzsch, M.
Conference Paper
2014Schottky barrier-based silicon nanowire pH sensor with live sensitivity control
Zörgiebel, F.M.; Pregl, S.; Römhildt, L.; Opitz, J.; Weber, W.; Mikolajick, T.; Baraban, L.; Cuniberti, G.
Journal Article
2013(Invited) Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Martin, D.; Müller, J.; Yurchuk, E.; Mueller, S.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, S.; Schlösser, T.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project
Ellinger, F.; Mikolajick, T.; Fettweis, G.; Hentschel, D.; Kolodinski, S.; Warnecke, H.; Reppe, T.; Tzschoppe, C.; Dohl, J.; Carta, C.; Fritsche, D.; Tretter, G.; Wiatr, M.; Kronholz, S.D.; Mikalo, R.P.; Heinrich, H.; Paulo, R.; Wolf, R.; Hübner, J.; Waltsgott, J.; Meißner, K.; Richter, R.; Michler, O.; Bausinger, M.; Mehlich, H.; Hahmann, M.; Möller, H.; Wiemer, M.; Holland, H.-J.; Gärtner, R.; Schubert, S.; Richter, A.; Strobel, A.; Fehske, A.; Cech, S.; Aßmann, U.; Pawlak, A.; Schröter, M.; Finger, W.; Schumann, S.; Höppner, S.; Walter, D.; Eisenreich, H.; Schüffny, R.
Journal Article
2013Feasibility study for silicon heterojunction metal wrap through (SHJ-MWT) solar cells
Dirnstorfer, I.; Benner, F.; Simon, D.K.; Mikolajick, T.; Schilling, N.; Klotzbach, U.
Conference Paper
2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Müller, J.; Böscke, T.S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T.M.; Kalinin, S.V.; Schlösser, T.; Boschke, R.; Bentum, R. van; Schröder, U.; Mikolajick, T.
Conference Paper
2013From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices
Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A.; Schröder, U.; Mikolajick, T.
Journal Article
2013Hafnium oxide based CMOS compatible ferroelectric materials
Schroeder, U.; Mueller, S.; Mueller, J.; Yurchuk, E.; Martin, D.; Adelmann, C.; Schloesser, T.; Bentum, R. van; Mikolajick, T.
Journal Article
2013Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Yurchuk, E.; Müller, J.; Knebel, S.; Sundqvist, J.; Graham, A.P.; Melde, T.; Schröder, U.; Mikolajick, T.
Conference Paper, Journal Article
2013Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Weber, W.M.; Schröder, U.; Riechert, H.; Mikolajick, T.
Journal Article
2013Parallel arrays of Schottky barrier nanowire field effect transistors. Nanoscopic effects for macroscopic current output
Pregl, S.; Weber, W.M.; Nozaki, D.; Kunstmann, J.; Baraban, L.; Opitz, J.; Mikolajick, T.; Cuniberti, G.
Journal Article
2013Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology
Mueller, S.; Yurchuk, E.; Slesazeck, S.; Mikolajick, T.; Müller, J.; Herrmann, T.; Zaka, A.
Conference Paper
2013Publisher's Note: “Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide” [Appl. Phys. Lett. 103, 131911 (2013)]
Friedrich, D.; Schmidt, B.; Heinig, K.H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.
Journal Article
2013Reliability characteristics of ferroelectric Si: HfO2 thin films for memory applications
Mueller, S.; Müller, J.; Schroeder, U.; Mikolajick, T.
Journal Article
2013Sponge-like Si-SiO2 nanocomposite - Morphology studies of spinodally decomposed silicon-rich oxide
Friedrich, D.; Schmidt, B.; Heinig, K.H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.
Journal Article
2012Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
Olsen, T.; Schröder, U.; Müller, S.; Krause, A.; Martin, D.; Singh, A.; Müller, J.; Geidel, M.; Mikolajick, T.
Journal Article
2012Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Müller, J.; Yurchuk, E.; Schlösser, T.; Paul, J.; Hoffmann, R.; Müller, S.; Martin, D.; Slesazeck, S.; Polakowski, P.; Sundqvist, J.; Czernohorsky, M.; Seidel, K.; Kücher, P.; Boschke, R.; Trentzsch, M.; Gebauer, K.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Ferroelectricity in simple binary ZrO2 and HfO2
Müller, J.; Böscke, T.S.; Schröder, U.; Mueller, S.; Bräuhaus, D.; Böttger, U.; Frey, L.; Mikolajick, T.
Journal Article
2012HfO 2-based ferroelectric field-effect transistors with 260 nm channel length and long data retention
Yurchuk, E.; Müller, J.; Hoffmann, R.; Paul, J.; Martin, D.; Boschke, R.; Schlösser, T.; Müller, S.; Slesazeck, S.; Bentum, R. van; Trentzsch, M.; Schröder, U.; Mikolajick, T.
Conference Paper
2012Incipient ferroelectricity in Al-doped HfO2 thin films
Mueller, Stefan; Mueller, Johannes; Singh, Aarti; Riedel, Stefan; Sundqvist, Jonas; Schroeder, Uwe; Mikolajick, Thomas
Journal Article
2012Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L.
Conference Paper
2012Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2
Müller, J.; Böscke, T.S.; Schröder, U.; Hoffmann, R.; Mikolajick, T.; Frey, L.
Journal Article
2012Non-volatile data storage in HfO2-based ferroelectric FETs
Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.
Conference Paper
2012Ten-nanometer ferroelectric Si:HfO2 films for next-generation FRAM capacitors
Mueller, S.; Summerfelt, S.R.; Muller, J.; Schroeder, U.; Mikolajick, T.
Journal Article
2011Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
Roll, G.; Jakschik, S.; Goldbach, M.; Wachowiak, A.; Mikolajick, T.; Frey, L.
Journal Article, Conference Paper
2011Dielectric backside passivation - improvements by dipole optimization
Jakschik, S.; Erben, E.; Benner, F.; Kupke, S.; Dirnstorfer, I.; Rose, M.; Endler, I.; Mikolajick, T.
Conference Paper
2011Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Müller, J.; Böscke, T.S.; Bräuhaus, D.; Schröder, U.; Böttger, U.; Sundqvist, J.; Kcher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Ferroelectricity in yttrium-doped hafnium oxide
Müller, J.; Schröder, U.; Böscke, T.S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
Roll, G.; Jakschik, S.; Burenkov, A.; Goldbach, M.; Mikolajick, T.; Frey, L.
Journal Article, Conference Paper
2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
Martin, D.; Grube, M.; Weinreich, W.; Müller, J.; Wilde, L.; Erben, E.; Weber, W.M.; Heitmann, J.; Schröder, U.; Mikolajick, T.; Riechert, H.
Journal Article
2011Phase transitions in ferroelectric silicon doped hafnium oxide
Böscke, T.S.; Teichert, S.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.
Journal Article
2010Carbon junction implant: Effect on leakage currents and defect distribution
Roll, G.; Jakschik, S.; Goldbach, M.; Mikolajick, T.; Frey, L.
Conference Paper
2010An empirical model describing the MLC retention of charge trap flash memories
Melde, T.; Hoffmann, R.; Yurchuk, E.; Paul, J.; Mikolajick, T.
Conference Paper
2010Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas
Conference Paper, Journal Article
2010Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
Zhou, D.; Schroeder, U.; Xu, J.; Weinreich, W.; Heitmann, J.; Jegert, G.; Kerber, M.; Knebel, S.; Erben, E.; Mikolajick, T.
Journal Article
2009Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas
Journal Article
2009TaN metal gate damage during high-k (Al2O3) high-temperature etch
Paul, Jan; Beyer, Volkhard; Michalowski, Pawel Piotr; Beug, M. Florian; Bach, Lars; Ackermann, Marco; Wege, S.; Tilke, Armin T.; Chan, N.; Mikolajick, Thomas; Bewersdorff-Sarlette, Ulrike; Knöfler, Roman; Czernohorsky, Malte; Ludwig, C.
Conference Paper, Journal Article
2002Effect of barium contamination on gate oxide integrity in high-k DRAM
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Bauer, A.; Frey, L.; Ryssel, H.
Journal Article
2002Platinum contamination issues in ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Pamler, W.; Hopfner, J.; Frey, L.; Ryssel, H.
Journal Article
2001Barium, strontium and bismuth contamination in CMOS processes
Boubekeur, H.; Mikolajick, T.; Höpfner, J.; Dehm, C.; Pamler, W.; Steiner, J.; Kilian, G.; Kolbesen, B.O.; Bauer, A.; Frey, L.; Ryssel, H.
Conference Paper
2001Impact of platinum contamination on ferroelectric memories
Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H.
Journal Article
2000Aspects of barium contamination in high dielectric dynamic random-access memories
Boubekeur, H.; Hopfner, J.; Mikolajick, T.; Dehm, C.; Frey, L.; Ryssel, H.
Journal Article
1999The influence of surface oxidation on the pH-sensing properties of silicon nitride
Mikolajick, T.; Kuhnhold, R.; Schnupp, R.; Ryssel, H.
Conference Paper
1997The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors
Mikolajick, T.; Häublein, V.; Ryssel, H.
Journal Article
1997Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Mikolajick, T.
: Ryssel, H. (Prüfer)
Dissertation
1997The ph-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition
Mikolajick, T.; Kühnhold, R.; Ryssel, H.
Journal Article
1996Schaffung einer Bayerischen Arbeitsgemeinschaft Mikroelektronik (BAME) innerhalb der FhG
Mikolajick, T.
Book Article