Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications
Tajalli, A.; Meneghini, M.; Besendörfer, S.; Kabouche, R.; Abid, I.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Journal Article
2020On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
Rzin, M.; Meneghini, M.; Rampazzo, F.; Zhan, V.G.; Marcon, D.; Grünenpütt, J.; Jung, H.; Lambert, B.; Riepe, K.; Blanck, H.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Poppitz, D.; Meneghesso, G.; Zanoni, E.
Journal Article
2020Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling
Zanoni, E.; Meneghini, M.; Meneghesso, G.; Rampazzo, F.; Marcon, D.; Zhan, V.G.; Chiocchetta, F.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Poppitz, D.
Conference Paper
2020Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
Diehle, P.; Hübner, S.; Santi, C. de; Mukherjee, K.; Zanoni, E.; Meneghini, M.; Geens, K.; You, S.; Decoutere, S.; Altmann, F.
Conference Paper
2020Vertical breakdown of GaN on Si due to V-pits
Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.
Journal Article
2020Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C.D.; Benazzi, D.; Besendörfer, S.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Journal Article
2018The 2018 GaN power electronics roadmap
Amano, H.; Baines, Y.; Beam, E.; Borga, M.; Bouchet, T.; Chalker, P.R.; Charles, M.; Chen, K.J.; Chowdhury, N.; Chu, R.; Santi, C. de; Souza, M.M. de; Decoutere, S.; Cioccio, L. di; Eckardt, B.; Egawa, T.; Fay, P.; Freedsman, J.J.; Guido, L.; Häberlen, O.; Haynes, G.; Heckel, T.; Hemakumara, D.; Houston, P.; Hu, J.; Hua, M.; Huang, Q.; Huang, A.; Jiang, S.; Kawai, H.; Kinzer, D.; Kuball, M.; Kumar, A.; Lee, K.B.; Li, X.; Marcon, D.; März, M.; McCarthy, R.; Meneghesso, G.; Meneghini, M.; Morvan, E.; Nakajima, A.; Narayanan, E.M.S.; Oliver, S.; Palacios, T.; Piedra, D.; Plissonnier, M.; Reddy, R.; Sun, M.; Thayne, I.; Torres, A.; Trivellin, N.; Unni, V.; Uren, M.J.; Hove, M. van; Wallis, D.J.; Wang, J.; Xie, J.; Yagi, S.; Yang, S.; Youtsey, C.; Yu, R.; Zanoni, E.; Zeltner, S.; Zhang, Y.
Journal Article
2014Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Conference Paper
2014Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
Santi, C. de; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U.T.; Meneghesso, G.; Zanoni, E.
Journal Article
2013Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
Journal Article
2013Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Journal Article