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| 2018 | A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S. | Conference Paper |
| 2013 | Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Yurchuk, E.; Müller, J.; Knebel, S.; Sundqvist, J.; Graham, A.P.; Melde, T.; Schröder, U.; Mikolajick, T. | Conference Paper, Journal Article |
| 2011 | Influence of metal gate and capping film stress on TANOS cell performance
Czernohorsky, M.; Melde, T.; Beyer, V.; Beug, M.F.; Paul, J.; Hoffmann, R.; Knöfler, R.; Tilke, A.T. | Journal Article, Conference Paper |
| 2011 | TaN and Al2O3 sidewall gate-etch damage influence on program, erase, and retention of sub-50-nm TANOS nand flash memory cells
Beug, M.F.; Melde, T.; Paul, J.; Knoefler, R. | Journal Article |
| 2010 | Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
Beug, M. Florian; Melde, Thomas; Czernohorsky, Malte; Hoffmann, Raik; Paul, Jan; Knöfler, Roman; Tilke, Armin T. | Journal Article |
| 2010 | Detailed physical simulation of program disturb mechanisms in sub-50 nm NAND flash memory strings
Nguyen, C.D.; Kuligk, A.; Vexler, M.I.; Klawitter, M.; Beyer, V.; Melde, T.; Czernohorsky, M.; Meinerzhagen, B. | Conference Paper |
| 2010 | An empirical model describing the MLC retention of charge trap flash memories
Melde, T.; Hoffmann, R.; Yurchuk, E.; Paul, J.; Mikolajick, T. | Conference Paper |
| 2010 | Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
Paul, Jan; Beyer, Volkhard; Czernohorsky, Malte; Beug, M. Florian; Biedermann, Kati; Mildner, Marcus; Michalowski, Pawel Piotr; Schütze, Enrico; Melde, Thomas; Wege, S.; Knöfler, Roman; Mikolajick, Thomas | Conference Paper, Journal Article |
| 2010 | Verfahren zur Erhoehung der Speicherhaltezeit von haftstellenbasierten nichtfluechtigen Halbleiterspeicherzellen
Melde, T.; Hoffmann, R. | Patent |
| 2009 | Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard | Conference Paper |
| 2009 | Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability
Seidel, K.; Müller, T.; Brandt, T.; Hoffmann, R.; Löhr, D.-A.; Melde, T.; Czernohorsky, M.; Paul, J.; Beyer, V. | Conference Paper |
| 2009 | Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T. | Conference Paper |
| 2009 | Select device disturb phenomenon in TANOS NAND flash memories
Melde, Thomas; Beug, M. Florian; Bach, Lars; Tilke, Armin T.; Knöfler, Roman; Bewersdorff-Sarlette, Ulrike; Beyer, Volkhard; Czernohorsky, Malte; Paul, Jan; Mikolajick, Thomas | Journal Article |