Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.
Journal Article
2019Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L.
Conference Paper
2019Wavelength-selective 4H-SiC UV-sensor array
Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T.
Journal Article
2018Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.
Journal Article
2018Large-area layer counting of 2D materials via visible reflection spectroscopy
Hutzler, Andreas; Matthus, C.D.; Dolle, C.; Rommel, M.; Jank, M.P.M.; Spiecker, E.; Frey, L.
Poster
2017Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C
Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L.
Journal Article
2017Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Matthus, C.D.; Erlbacher, T.; Schöfer, B.; Bauer, A.J.; Frey, L.
Conference Paper
2017Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T.
Conference Paper