Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Conference Paper
2016Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
Thome, F.; Maroldt, S.; Ambacher, O.
Journal Article
2015A 200 GHz driver amplifier in metamorphic HEMT technology
Amado-Rey, A.B.; Campos-Roca, Y.; Maroldt, S.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Conference Paper
2015Examples of High-speed Harmonic Load Pull Investigations of High-Efficiency GaN Power Transistors
Marchetti, M.; Maier, T.; Carrubba, V.; Maroldt, S.; Mußer, M.; Quay, R.
Conference Paper
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Journal Article
2015Impact of metallization layer structure on the performance of G-band branch-line couplers
Amado-Rey, A.B.; Campos-Roca, Y.; Weber, R.; Maroldt, S.; Tessmann, A.; Massler, H.; Wagner, S.; Leuther, A.; Ambacher, O.
Journal Article
2015Investigations of higher order doherty amplifiers for high power-efficiency AlGaN/GaN amplifier design
Krause, S.
: Zwick, T. (Supervisor); Quay, R. (Supervisor); Maroldt, S. (Supervisor)
Master Thesis
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2015Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
Thome, F.; Maroldt, S.; Ambacher, O.
Conference Paper
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
2014A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
Thome, F.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2014Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Journal Article
2014Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
Journal Article
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O.
Conference Paper
2013(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Journal Article
2013Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2013Class-BJ power amplifier modes: The IMD behavior of reactive terminations
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2013A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier
Heijden, M.P. van der; Acar, M.; Maroldt, S.
Conference Paper
2013QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.
Conference Paper
2013QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz
Maroldt, S.; Aja, B.; Van Raay, F.; Krause, S.; Brueckner, P.; Quay, R.
Conference Paper
2013Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation
Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M.
Conference Paper
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Conference Paper
2012Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
Conference Paper
2012Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Maroldt, Stephan
: Ambacher, Oliver
Dissertation
2012A high gain SiGe-GaN switching power amplifier in the GHz-range
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R.
Conference Paper
2012An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Conference Paper
2012An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Conference Paper
2012Physics-based modeling of GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
Journal Article
2011900 MHz pulse-width-modulated class-S power amplifier with improved linearity
Maier, S.; Wiegner, D.; Zierdt, M.; Kuebart, W.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
Conference Paper
2011Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O.
Conference Paper
2011Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.
Conference Paper
2011Design and modelling challenges for advanced class-S digital transmitters
Quay, R.; Maroldt, S.
Conference Paper
2011Design and realisation of a 50 W GaN class-E power amplifier
Sochor, P.-L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R.
Conference Paper
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Journal Article, Conference Paper
2011Dual-gate GaN MMICs for MM-wave operation
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
Journal Article
2011GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
Journal Article
2011A high-power dual-gate GaN switching-amplifier in the GHz-range
Heck, S.; Brackle, A.; Berroth, M.; Maroldt, S.; Quay, R.
Conference Paper
2011Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage
Maier, S.; Wiegner, D.; Zierdt, M.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
Conference Paper
2010Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.
Journal Article
2010Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Maroldt, S.
Dissertation
2010GaN devices for communication applications: Evolution of amplifier architectures
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S.
Journal Article
2010High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Journal Article, Conference Paper
2010Influence of dry etch conditions on the performance of recessed gate GaN/AlGaN HEMTs
Pletschen, Wilfried; Kiefer, R.; Maroldt, S.; Müller, Stefan; Quay, Rüdiger; Mikulla, Michael; Ambacher, O.
Conference Paper
2010Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
Conference Paper
2009Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions
Kolaklieva, L.; Kakanakov, R.; Stefanov, P.; Cimalla, V.; Maroldt, S.; Ambacher, O.; Tonisch, K.; Niebelschütz, F.
Conference Paper, Journal Article
2009Gallium nitride MMICs for mm-wave power operation
Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.
Journal Article
2009Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F.
Journal Article
2009High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O.
Conference Paper
2009High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2009L-to-Ka-band AlGaN/GaN HEMT power amplifiers with high efficiency
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Musser, M.; Maroldt, S.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2009A simulation study of enhancement-mode AlGaN/GaN HEMTs with recessed gates
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Conference Paper
2008The role of Ti/Al ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs
Kolaklieva, L.; Kakanakov, R.; Cimalla, V.; Maroldt, S.; Niebelschütz, F.; Tonisch, K.; Ambacher, O.
Conference Paper