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| 2013 | 30 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2013 | Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2013 | Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2012 | Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2012 | Electro-optically cavity dumped 2 µm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2012 | GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K. | Conference Paper |
| 2012 | High-power 2.0 m semiconductor disk laser-Influence of lateral lasing
Töpper, T.; Rattunde, M.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2012 | Semiconductor disk laser at 2.05 µm wavelength with <100 kHz linewidth at 1 W output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2012 | Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2012 | Thermal effects in 2.x µm vertical-external-cavity-surface-emitting lasers
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M. | Journal Article |
| 2011 | 2 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J. | Journal Article |
| 2011 | 2µm semiconductor disk laser technology
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2011 | Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2011 | Narrow linewidth 2 µm GaSb-based semiconductor disk laser
Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J. | Abstract, Conference Paper |
| 2011 | Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J. | Journal Article |
| 2010 | GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2010 | GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2010 | Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K. | Conference Paper |
| 2010 | Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K. | Conference Paper, Journal Article |
| 2010 | Toward 3 micron wavelength semiconductor disk lasers
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K. | Journal Article |
| 2009 | GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2009 | Influence of the intracavity heatspreader on the VECSEL temperature
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M. | Conference Paper |
| 2009 | Investigation of thermal management in optically pumped, antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M. | Conference Paper, Journal Article |
| 2009 | A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K. | Conference Paper |
| 2009 | Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J. | Journal Article |
| 2009 | Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2009 | Quantum cascade detectors
Giorgetta, F.R.; Baumann, E.; Graf, M.; Yang, Q.K.; Manz, C.; Köhler, K.; Beere, H.E.; Ritchie, D.A.; Linfield, E.; Davies, A.G.; Fedoryshyn, Y.; Jäckel, H.; Fischer, M.; Faist, J.; Hofstetter, D. | Journal Article |
| 2009 | Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K. | Journal Article, Conference Paper |
| 2009 | Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J. | Conference Paper |
| 2009 | Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D. | Conference Paper |
| 2008 | 5W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D. | Conference Paper |
| 2008 | Dispersive gain and loss in midinfrared quantum cascade laser
Revin, D.G.; Soulby, M.R.; Cockburn, J.W.; Yang, Q.K.; Manz, C.; Wagner, J. | Journal Article |
| 2008 | GaInAs/ AlAsSb quantum cascade lasers: A new approach towards 3-to-5 µm semiconductor lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2008 | GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2008 | High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J. | Conference Paper |
| 2008 | High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D. | Conference Paper |
| 2008 | High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2008 | High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D. | Journal Article |
| 2008 | An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2008 | Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D. | Conference Paper |
| 2008 | Measurement and simulation of thermal properties of optically pumped antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M. | Conference Paper |
| 2008 | Midinfrared quantum cascade detector with a spectrally broad response
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K. | Journal Article |
| 2008 | Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2008 | Optically pumped GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2008 | Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
Köhler, K.; Manz, C. | Patent |
| 2008 | Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J. | Journal Article |
| 2008 | Waveguide optical losses in InGaAs/AlAsSb quantum cascade laser
Revin, D.G.; Cockburn, J.W.; Menzel, S.; Yang, Q.K.; Manz, C.; Wagner, J. | Journal Article |
| 2007 | µ-probe photoluminescence study of mid-IR quantum cascade lasers based on antimonide ternary and quaternary barriers
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J. | Journal Article |
| 2007 | Barrier- and in-well pumped GaSb-based 2.3 µm VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Köhler, K. | Journal Article |
| 2007 | Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2007 | Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.K.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J. | Conference Paper |
| 2007 | Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K. | Conference Paper, Journal Article |
| 2007 | Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers
Vitiello, M.S.; Scarmacio, G.; Spagnolo, V.; Lops, A.; Yang, Q.K.; Manz, C.; Wagner, J. | Journal Article |
| 2007 | High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J. | Conference Paper |
| 2007 | High peak-power (10.5 W) GaInAs/AlGaAsSb quantum-cascade lasers emitting at lamda ~ 3.6-3.8 µm
Yang, Q.K.; Manz, C.; Bronner, W.; Lehmann, N.; Fuchs, F.; Köhler, K.; Wagner, J. | Journal Article |
| 2007 | High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D. | Conference Paper |
| 2007 | InGaAs/AlAsSb quantum cascade detectors operating in the near infrared
Giorgetta, F.R.; Baumann, E.; Hofstetter, D.; Manz, C.; Yang, Q.K.; Köhler, K.; Graf, M. | Journal Article |
| 2007 | Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime
Schulz, N.; Rattunde, M.; Manz, C.; Kohler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D. | Conference Paper |
| 2007 | Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Brauch, U. | Journal Article |
| 2007 | Short-wavelength quantum cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J. | Journal Article |
| 2007 | Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2007 | Unipolarer Quantenkaskaden-Laser hoher Effizienz
Yang, Q.; Manz, C. | Patent |
| 2006 | Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J. | Journal Article |
| 2006 | Bound-to-contiuum GaInAs-AlAsSb quantum cascade lasers with reduced electric injection power density
Yang, Q.K.; Manz, C.; Bronner, W.; Schäuble, K.; Mann, C.; Schwarz, K.; Köhler, K.; Wagner, J. | Journal Article |
| 2006 | Distributed-feedback GaInAs/AIAsSb quantum-cascade lasers operating at 300 K
Yang, Q.K.; Bronner, W.; Manz, C.; Raynor, B.; Menner, H.; Mann, C.; Köhler, K.; Wagner, J. | Journal Article |
| 2006 | GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A. | Conference Paper |
| 2006 | High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A. | Journal Article |
| 2006 | High power GaSb-based optically pumped VECSEL at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J. | Conference Paper |
| 2006 | Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A. | Journal Article |
| 2006 | Room-temperature short-wavelength (Lambda about 3.7-3.9 µm) GaInAs/AlAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J. | Journal Article |
| 2006 | Tunable, single-frequency, diode-pumped 2.3µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2005 | (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
Wagner, J.; Geerlings, E.; Kaufel, G.; Kelemen, M.T.; Manz, C.; Pfahler, C.; Rattunde, M.; Schmitz, J. | Conference Paper |
| 2005 | Continuous-wave operation of GaInAs/AlGaAsSb quantum cascade lasers
Yang, Q.K.; Bronner, W.; Manz, C.; Moritz, R.; Mann, C.; Kaufel, G.; Köhler, K.; Wagner, J. | Journal Article |
| 2005 | Entwicklung einer interaktiven Storytelling AR/VR-Spiel- und Lernumgebung
Manz, C.
: Schneider, O. (Prüfer) | Thesis |
| 2005 | GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Kirste, L.; Köhler, K.; Wagner, J. | Journal Article |
| 2005 | GaInAs/AlGaAsSb quantum-cascade lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Kirste, L.; Köhler, K.; Wagner, J. | Journal Article |
| 2005 | High duty-cycle (>= 50%) operation of GalnAs/Al(Ga)AsSb quantum cascade lasers
Bronner, W.; Yang, Q.; Manz, C.; Kaufel, G.; Mann, C.; Kohler, K.; Wagner, J. | Conference Paper |
| 2005 | High duty-cycle (>= 50%) operation of GaInAs/Al(Ga)AsSb quantum cascade lasers
Bronner, W.; Yang, Q.K.; Manz, C.; Kaufel, G.; Mann, C.; Köhler, K.; Wagner, J. | Conference Paper |
| 2005 | High-brightness GaSb-based tapered diode-lasers emitting at 1.9 µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2005 | High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2005 | High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D. | Journal Article |
| 2004 | High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9µm
Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2004 | Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure
Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J. | Journal Article |
| 1999 | Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
Daleiden, J.; Kiefer, R.; Klußmann, S.; Kunzer, M.; Manz, C.; Walther, M.; Braunstein, J.; Weimann, G. | Journal Article |
| 1999 | In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Manz, C.; Kunzer, M.; Obloh, H.; Ramakrishnan, A.; Kaufmann, U. | Journal Article |
| 1999 | Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B. | Journal Article |
| 1998 | 20 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy
Kiefer, R.; Lösch, R.; Walcher, H.; Walther, M.; Weisser, S.; Czotscher, K.; Benz, W.; Rosenzweig, J.; Herres, N.; Maier, M.; Manz, C.; Pletschen, W.; Braunstein, J.; Weimann, G. | Conference Paper |