Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Conference Paper
2018Suppression of iron memory effect in GaN epitaxial layers
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Müller, Stefan; Quay, Rüdiger; Stadelmann, Tim
Journal Article
2016Optimization of 2.5 μm VECSEL: Influence of the QW active region
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2016Variant management and reuse
Schaefer, Ina; Heuer, André; Jäger, Tobias; Kaufmann, Tobias; Manz, Christian; May, Reinhold; Reuter, Christian; Rumpe, Bernhard; Schlingloff, Holger; Schröck, Sebastian; Schulze, Christoph; Schulze, Michael; Weißleder, Stephan
Book Article
2015Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Conference Paper
20142-µm high-brilliance micro-cavity VECSEL with >2W output power
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
Conference Paper
2013 Power scaling of narrow-linewidth 2μm GaSb-based semiconductor disk laser
Kaspar, S.; Rattunde, M.; Adler, S.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Conference Paper
201330 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2013High-performance 2.X micron semiconductor disk lasers
Rattunde, M.; Kaspar, S.; Adler, S.; Holl, P.; Bächle, A.; Manz, C.; Wagner, J.
Conference Paper
2013Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2013Multi-wavelength and multi-band infrared semiconductor lasers
Ostendorf, R.; Hugger, S.; Rattunde, M.; Schilling, C.; Kaspar, S.; Aidam, R.; Baechle, A.; Manz, C.; Driad, R.; Fuchs, F.; Wagner, J.
Conference Paper
2013Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Electro-optically cavity dumped 2 µm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U.T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission
Rattunde, Marcel; Kaspar, S.; Töpper, T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Conference Paper
2012GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.
Conference Paper
2012High-power 2.0 µm semiconductor disk laser-influence of lateral lasing
Töpper, T.; Rattunde, Marcel; Kaspar, S.; Moser, R.; Manz, Christian; Köhler, Klaus; Wagner, Joachim
Journal Article
2012Semiconductor disk laser at 2.05 µm wavelength with <100 kHz linewidth at 1 W output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Topper, T.; Manz, C.; Kohler, K.; Wagner, J.
Conference Paper
2012Single-frequency kHz-linewidth 2-m GaSb-based semiconductor disk lasers with multiple-watt output power
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2012Thermal effects in 2.x µm vertical-external-cavity-surface-emitting lasers
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Journal Article
20112 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
20112µm semiconductor disk laser technology
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2011Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2011Narrow linewidth 2 µm GaSb-based semiconductor disk laser
Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Abstract
2011Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Journal Article
2010GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper, Journal Article
2010Toward 3 micron wavelength semiconductor disk lasers
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K.
Journal Article
2009GaSb-based optically pumped semiconductor disk laser using multiple gain elements
Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2009Influence of the intracavity heatspreader on the VECSEL temperature
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper
2009Investigation of thermal management in optically pumped, antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper, Journal Article
2009A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Wagner, J.; Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.
Conference Paper
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Journal Article
2009Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Rattunde, M.; Rösener, B.; Hempler, N.; Hopkins, J.-M.; Burns, D.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2009Quantum cascade detectors
Giorgetta, F.R.; Baumann, E.; Graf, M.; Yang, Q.K.; Manz, C.; Köhler, K.; Beere, H.E.; Ritchie, D.A.; Linfield, E.; Davies, A.G.; Fedoryshyn, Y.; Jäckel, H.; Fischer, M.; Faist, J.; Hofstetter, D.
Journal Article
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Journal Article, Conference Paper
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Conference Paper
2009Tuning and brightness optimization of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm
Hempler, N.; Hopkins, J.-M.; Rattunde, M.; Rösener, B.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
20085W Mid-IR optically-pumped semiconductor disk laser
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Conference Paper
2008Dispersive gain and loss in midinfrared quantum cascade laser
Revin, D.G.; Soulby, M.R.; Cockburn, J.W.; Yang, Q.K.; Manz, C.; Wagner, J.
Journal Article
2008GaInAs/ AlAsSb quantum cascade lasers: A new approach towards 3-to-5 µm semiconductor lasers
Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Wagner, J.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2008High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xµm wavelength range
Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.
Conference Paper
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D.
Conference Paper
2008Measurement and simulation of thermal properties of optically pumped antimonide VECSELs
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Conference Paper
2008Midinfrared quantum cascade detector with a spectrally broad response
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Optically pumped GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
Köhler, K.; Manz, C.
Patent