Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2020Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2019Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2019Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver
Conference Paper
2019A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2019Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh
Journal Article
2019A pseudo-complementary GaN-based gate driver with Reduced Static Losses
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2018C-V characterization technique for four-terminal GaN-on-Si HEMTs based on 3-port S-parameter measurements
Salcines, Cristino; Mönch, Stefan; Spudic, Boris; Kallfass, Ingmar
Conference Paper
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2018Monolithic GaN power circuits for highly-efficient, fast-switching converter applications with higher functionality
Waltereit, Patrick; Reiner, Richard; Weiss, Beatrix; Mönch, Stefan; Müller, Stefan; Czap, Heiko; Wespel, Matthias; Dammann, Michael; Kirste, Lutz; Quay, Rüdiger
Conference Paper
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Conference Paper