Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
Himmerlich, M.; Knübel, A.; Aidam, R.; Kirste, L.; Eisenhardt, A.; Krischok, S.; Pezoldt, J.; Schley, P.; Sakalauskas, E.; Goldhahn, R.; Félix, R.; Mánuel, J.M.; Morales, F.M.; Carvalho, D.; Ben, T.; García, R.; Koblmüller, G.
Journal Article
2012Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Manuel, J.M.; Morales, F.M.; Garcia, R.; Aidam, R.; Kirste, L.; Ambacher, O.
Journal Article
2011Growth and characterization of InAlN layers nearly lattice-matched to GaN
Mánuel, J.M.; Morales, F.M.; Lozano, J.G.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Journal Article, Conference Paper
2011Growth mechanism and electronic properties of epitaxial In(2)O(3) films on sapphire
Wang, C.Y.; Kirste, L.; Morales, F.M.; Mánuel, J.M.; Röhlig, C.-C.; Köhler, K.; Cimalla, V.; García, R.; Ambacher, O.
Journal Article
2011Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Mánuel, J.M.; Morales, F.M.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Journal Article
2010Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
Manuel, J.M.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Journal Article