Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Cells in contact to carbon dots: A label-free, impedance-based and multidimensional approach
Pütz, Pierre; Lemberger, Michael; Wegener, Joachim
Abstract
2015Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time
Paskaleva, A.; Weinreich, W.; Bauer, A.J.; Lemberger, M.; Frey, L.
Journal Article
2013Characterization of ZnO structures by optical and X-ray methods
Petrik, P.; Pollakowski, B.; Zakel, S.; Gumprecht, T.; Beckhoff, B.; Lemberger, M.; Labadi, Z.; Baji, Z.; Jank, M.; Nutsch, A.
Journal Article, Conference Paper
2013Comparative measurements on atomic layer deposited Al2O3 thin films using ex situ table top and mapping ellipsometry, as well as X-ray and VUV reflectometry
Petrik, P.; Gumprecht, T.; Nutsch, A.; Roeder, G.; Lemberger, M.; Juhasz, G.; Polgar, O.; Major, C.; Kozma, P.; Janosov, M.; Fodor, B.; Agocs, E.; Fried, M.
Journal Article, Conference Paper
2013Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
Weinreich, W.; Shariq, A.; Seidel, K.; Sundqvist, J.; Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article, Conference Paper
2013Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction
Rommel, Mathias; Jambreck, Joachim D.; Lemberger, Martin; Bauer, Anton J.; Frey, Lothar; Murakami, Katsuhisa; Richter, Christoph; Weinzierl, Philipp
Journal Article
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Journal Article
2012Approaches for the reduction of the influence of parasitic capacitances on local IV characteristics for conductive AFM
Rommel, Mathias; Jambreck, Joachim D.; Murakami, Katsuhisa; Lemberger, Martin; Richter, Christoph; Weinzierl, Philip; Bauer, Anton J.; Frey, Lothar
Presentation
2012Plasma-assisted atomic layer deposition of alumina at room temperature
Lemberger, Martin; Fromm, Timo; Rommel, Mathias; Bauer, Anton J.; Frey, Lothar
Poster
2011Atomic layer deposited Al2O3 as characterized reference samples for nanolayer metrology
Nutsch, A.; Lemberger, M.; Petrik, P.
Conference Paper
2011Conduction mechanisms and environmental sensitivity of solution-processed silicon nanoparticle layers for thin-film transistors
Weis, S.; Körmer, R.; Jank, M.P.M.; Lemberger, M.; Otto, M.; Ryssel, H.; Peukert, W.; Frey, L.
Journal Article
2011Dünnfilmtransistor
Jank, Michael; Teuber, Erik; Lemberger, M.; Huang, J.
Patent
2011Effects of oxygen and forming gas annealing on ZnO TFTs
Huang, J.; Radhakrishna, U.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Conference Paper
2011Ferroelectricity in yttrium-doped hafnium oxide
Müller, J.; Schröder, U.; Böscke, T.S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.
Journal Article
2011Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures
Paskaleva, A.; Lemberger, M.; Bauer, A.J.; Frey, L.
Journal Article
2011Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks
Paskaleva, A.; Lemberger, M.; Atanassova, E.; Bauer, A.J.
Journal Article, Conference Paper
2010Chemische Gasphasenabscheidung von Metallsilicatschichten aus Einquellen-Ausgangsstoffen für Anwendungen in der Mikroelektronik
Lemberger, M.
Dissertation
2010Effects of oxygen and forming gas annealing on ZnO-TFTs
Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Polster, S.; Ryssel, H.; Frey, L.
Poster
2010Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers
Rommel, M.; Yanev, V.; Paskaleva, A.; Erlbacher, T.; Lemberger, M.; Bauer, A.J.; Frey, L.
Conference Paper
2010Impact of forming gas annealing on ZnO-TFTs
Huang, J.; Krishna, U.R.; Lemberger, M.; Jank, M.P.M.; Ryssel, H.; Frey, L.
Conference Paper
2009Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.
Conference Paper, Journal Article
2009Deposition of niobium nitride thin films from Tert-Butylamido-Tris-(Diethylamido)-Niobium by a modified industrial MOCVD reactor
Thiede, T.B.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Barreca, D.; Gasparotto, A.; Fischer, R.A.
Journal Article
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
Müller, J.; Böscke, T.S.; Schröder, U.; Reinicke, M.; Oberbeck, L.; Zhou, D.; Weinreich, W.; Kücher, P.; Lemberger, M.; Frey, L.
Conference Paper, Journal Article
2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2009Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks
Pakaleva, A.; Lemberger, M.; Bauer, A.J.; Weinreich, W.; Heitmann, J.; Erben, E.; Schröder, U.; Oberbeck, L.
Journal Article
2009Search for future high-k dielectrics, boundary conditions and examples
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Conference Paper
2008Evaluation of MOCVD grown niobium nitride films as gate electrode for advanced CMOS technology
Thiede, T.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Fischer, R.A.
Conference Paper
2008HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories
Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008High-k: Latest developments and perspectives
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Book Article
2008Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy
Paskaleva, A.; Yanev, V.; Rommel, M.; Lemberger, M.; Bauer, A.J.
Journal Article
2008Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.
Journal Article
2007Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
Lemberger, M.; Baunemann, A.; Bauer, A.J.
Journal Article
2007MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Frey, L.; Ryssel, H.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.
Journal Article
2007MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2] and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}]
Baunemann, A.; Lemberger, M.; Bauer, A.J.; Parala, H.; Fischer, R.A.
Journal Article
2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article
2007Stress induced leakage current mechanism in thin Hf-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster
2007Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique
Yanev, V.; Paskaleva, A.; Weinreich, W.; Lemberger, M.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2006Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers
Paskaleva, A.; Atanassova, E.; Lemberger, M.; Bauer, A.J.
Conference Paper
2006Stress induced leakage currents and charge trapping in thin Zr- and Hf-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Conference Paper
2005An asymmetry of conduction mechanisms and charge trapping in thin high-k Hf(x)Ti(y)Si(z)O films
Paskaleva, A.; Bauer, A.J.; Lemberger, M.
Journal Article
2005Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers
Rommel, M.; Groß, M.; Ettinger, A.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2005Chemistry of mixed ligand all nitrogen coordinated Ta, Hf, and W precursors for metal nitride MOCVD
Baunemann, A.; Rische, D.; Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Fischer, R.A.
Poster
2005Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf(x)Ti(y)Si(z)O films
Paskaleva, A.; Bauer, A.; Lemberger, M.
Journal Article
2005Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2005High-k hafnium silicate films on silicon and germanium wafers by MOCVD using a single-source precursor
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Paskaleva, A.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2005MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper
2005MOCVD of cunductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper
2005Thin Hf(x)Ti(y)Si(z)O films with varying Hf to Ti contents as candidates for high-k dielectrics
Bauer, A.J.; Paskaleva, A.; Lemberger, M.; Frey, L.; Ryssel, H.
Conference Paper
2004Different current conduction mechanisms through thin high-k Hf(x)Ti(y)Si(z)O films due to the varying Hf to Ti ratio
Paskaleva, A.; Bauer, A.J.; Lemberger, M.; Zurcher, S.
Journal Article
2004Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2004Electrical properties and conduction mechanisms in Hf(x)Ti(y)Si(z)O films obtained from novel MOCVD precursors
Paskaleva, A.; Lemberger, M.; Zürcher, S.; Bauer, A.J.
Conference Paper
2003Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2003Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursors
Zürcher, S.; Morstein, M.; Lemberger, M.; Bauer, A.J.
Conference Paper
2003Zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2002New single-source precursors for the MOCVD of high-kappa dielectric zirconium silicates to replace SiO2 in semiconducting devices
Zürcher, S.; Morstein, M.; Spencer, N.D.; Lemberger, M.; Bauer, A.
Journal Article
2001Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides
Jank, M.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2001New precursors for MOCVD of high-k metal silicates as alternative to SiO2 in semiconducting devices
Zürcher, S.; Morstein, M.; Bauer, A.J.; Lemberger, M.
Poster
2000Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides
Jank, M.P.M.; Lemberger, M.; Frey, L.; Ryssel, H.
Conference Paper