Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016High-power operation of coherently coupled tapered laser diodes in an external cavity
Schimmel, G.; Doyen, I.; Janicot, S.; Hanna, M.; Georges, P.; Lucas-Leclin, G.; Decker, J.; Crump, P.; Erbert, G.; Kaunga-Nyirenda, S.; Moss, D.; Bull, S.; Larkins, E.C.; Witte, U.; Traub, M.
Conference Paper
2013The BRIDLE project: High brilliance diode lasers for industrial applications
Brand, T.; Bull, S.; Larkins, E.C.; Traub, M.; Hengesbach, S.; Uusimaa, P.; Vilokkinen, V.; Crump, P.; Erbert, G.; Lucas-Leclin, G.; Georges, P.; Rataj, T.; Deichsel, E.
Conference Paper
2005By-emitter degradation analysis of high-power laser bars
Bull, S.; Tomm, J.W.; Oudart, M.; Nagle, J.; Scholz, C.; Boucke, K.; Harrison, I.; Larkins, E.C.
Journal Article
2000Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Arias, J.; Esquivias, I.; Larkins, E.C.; Burkner, S.; Weisser, S.; Rosenzweig, J.
Journal Article
1999Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1997Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J.
Conference Paper
1997Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1996Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Journal Article
1996Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Journal Article
1996Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures
Sah, R.E.; Ralston, J.D.; Daleiden, J.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Benz, W.
Journal Article
1996High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.
Conference Paper
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Journal Article
1996Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Schönfelder, A.; Ralston, J.D.; Czotscher, K.; Weisser, S.; Rosenzweig, J.; Larkins, E.C.
Journal Article
1996Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I.
Journal Article
1996Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
199537 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
1995CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Weisser, S.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Book Article
1995Field dependence of carrier capture in GaAs/AlAs/AlGaAs double-barrier quantum well structures.
Schneider, H.; Larkins, E.C.
Journal Article
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Journal Article
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Journal Article
1995Picosecond spectroscopy of optically modulated high-speed laser diodes.
Sutter, D.H.; Schneider, H.; Weisser, S.; Ralston, J.D.; Larkins, E.C.
Journal Article
1995Process parameter dependence of Imurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multible quantum wells
Bürkner, S.; Maier, M.; Larkins, E.C.; Rothemund, W.; O'Reilly, E.P.; Ralston, J.D.
Journal Article
1995Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J.
Conference Paper
1995Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures
Sah, R.E.; Ralston, J.D.; Eichin, G.; Dischler, B.; Rothemund, W.; Wagner, J.; Larkins, E.C.; Baumann, H.
Journal Article
1995Tapered InGaAs/GaAs MWQ lasers with carbon modulation-doping and reduced filamentation
Ralston, J.D.; Laughton, F.R.; Chazan, P.; Larkins, E.C.; Maier, M.; Abd Rahman, M.K.; White, I.H.
Journal Article
1995Tunneling assisted thermionic emission in double-barrier quantum well structures
Ehret, S.; Schneider, H.; Larkins, E.C.; Ralston, J.D.
Journal Article
1995Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1994Capture of carriers excited by interband and intersubband absorption in GaAs/AlAs/AlGaAs double-barrier quantum wells
Schneider, H.; Ehret, S.; Vinattieri, A.; Shah, J.; Larkins, E.C.
Journal Article
1994Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Flemig, G.; Rothemund, W.; Ralston, J.D.
Conference Paper
1994DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.
Conference Paper
1994Device and process technologies for monolithic, high-speed, low-chirp semiconductor laser transmitters.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Bronner, W.; Hornung, J.; Köhler, K.
Conference Paper
1994Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents
Weisser, S.; Ralston, J.D.; Eisele, K.; Sah, R.E.; Hornung, J.; Larkins, E.C.; Tasker, P.J.; Benz, W.; Rosenzweig, J.; Bronner, W.; Fleissner, J.; Bender, K.
Conference Paper
1994Elimination of long-term calibration drift in molecular beam epitaxy by cooling the source flange
Larkins, E.C.; Thaden, H.; Betsche, H.; Eichin, G.; Ralston, J.D.
Journal Article
1994Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors.
Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D.
Journal Article
1994Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography
Baeumler, M.; Larkins, E.C.; Bachem, K.H.; Bernklau, D.; Riechert, H.; Ralston, J.D.; Jantz, W.
Conference Paper
1994Ion-channeling studies of InyGa1-yAs/GaAs strained-layer single and multiple quantum-well structures
Flemig, G.W.; Brenn, R.; Larkins, E.C.; Bürkner, S.; Bender, G.; Baeumler, M.; Ralston, J.D.
Journal Article
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Conference Paper
1994Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers
Ralston, J.D.; Weisser, S.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Rosenzweig, J.; Fleissner, J.; Bender, K.
Journal Article
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Conference Paper
1994MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R.
Conference Paper
1994Nonresonant electron capture in GaAs/AlAs/AlGaAs double-barrier quantum well infrared detectors.
Schneider, H.; Vinattieri, A.; Shah, J.; Ehret, S.; Larkins, E.C.; Rossmanith, M.
Journal Article
1994Partial interdiffusion of InGaAs/GaAs MQW modulators for photonic integration
Humbach, O.; Soyka, R.; Stöhr, A.; Bürkner, S.; Ralston, J.D.; Larkins, E.C.; Jäger, D.
Conference Paper
1994Photovoltaic quantum well intersubband infrared detectors by internal electric fields
Schneider, H.; Ehret, S.; Larkins, E.C.; Ralston, J.D.; Schwarz, K.; Koidl, P.
Conference Paper
1994Strain relaxation in In0.2Ga0.8As/GaAs MQW structures
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Conference Paper
199330 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1993Control of differential gain, nonlinear gain, and damping factor for high-speed application of GaAs-based MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Journal Article
1993Defect and strain redistribution in InxGa1-xAs/GaAs multiple quantum wells studied by resonant Raman scattering.
Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.; Wagner, J.
Journal Article
1993Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices.
Ralston, J.D.; Larkins, E.C.; Rothemund, W.; Esquivias, I.; Weisser, S.; Rosenzweig, J.; Fleissner, J.
Journal Article
1993InGaAs/GaAs multiple-quantum-well modulators and switches
Stöhr, A.; Humbach, O.; Zumkley, S.; Wingen, G.; David, G.; Jäger, D.; Bollig, B.; Larkins, E.C.; Ralston, J.D.
Journal Article
1993MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W.
Journal Article
1993Mechanisms for the modulation bandwidth enhancement in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Ralston, J.D.; Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Fleissner, J.
Conference Paper
1993Monolayer-resolved x-ray-excited Auger-electron diffraction from single-plane emission in GaAs
Seelmann-Eggebert, M.; Fasel, U.; Larkins, E.C.; Osterwalder, J.
Journal Article
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Journal Article
1993Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers.
Ralston, J.D.; Weisser, S.; Schönfelder, A.; Esquivias, I.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.
Conference Paper
1993Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Journal Article
1993Space-charge effects in photovoltaic double barrier quantum well infrared detectors.
Schneider, H.; Larkins, E.C.; Ralston, J.D.; Schwarz, K.; Fuchs, F.; Koidl, P.
Journal Article
1993Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Journal Article
1993Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J.
Journal Article
1993Strained-layer multiple-quantum-well InGaAs/GaAs waveguide modulators operating around 1 mym.
Humbach, O.; Stöhr, A.; Auer, U.; Larkins, E.C.; Ralston, J.D.; Jäger, D.
Journal Article
199216 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.
Esquivias, I.; Weisser, S.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; As, D.J.; Gallagher, D.F.G.; Ralston, J.D.; Rosenzweig, J.; Zappe, H.P.
Conference Paper
1992Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J.
Conference Paper
1992Diffusive electrical conduction in high-speed p-i-n photodetectors.
Schneider, H.; Larkins, E.C.; Fleissner, J.; Bender, G.; Koidl, P.; Ralston, J.D.
Journal Article
1992Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Journal Article
1992High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1992High-speed InGaAs/GaAs multiple quantum well electrooptical modulator.
Wingen, G.; Zumkley, S.; David, G.; Larkins, E.C.; Ralston, J.D.; Jäger, D.
Conference Paper
1992Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J.
Conference Paper
1992Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.
Ralston, J.D.; Weisser, S.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1992Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
Weisser, S.; Esquivias, I.; Gallagher, D.F.G.; Tasker, P.J.; Fleissner, J.; Larkins, E.C.; Ralston, J.D.; Rosenzweig, J.
Conference Paper
1992Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Conference Paper