Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S.
Conference Paper
2018High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Calvo, J.; Zimmermann, K.; Müller, J.
Journal Article
2018Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET
Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.
Journal Article
2013Accurate and efficient physical simulation of program disturb in scaled NAND flash memories
Kuligk, A.; Nguyen, C.D.; Löhr, D.-A.; Beyer, V.; Meinerzhagen, B.
Conference Paper
2010Auf dem Weg zur Supply Chain-Organisation
Kazmierski, O.; Löhr, D.; Schickentanz, M.; Sehner, M.
Book Article
2010Characterization of anomalous erase effects in 48 nm TANOS memory cells
Loehr, D.-A.; Hoffmann, R.; Naumann, A.; Paul, J.; Seidel, K.; Czernohorsky, M.; Beyer, V.
Conference Paper
2010Impact of the storage layer charging on random telegraph noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells
Seidel, K.; Hoffman, R.; Naumann, A.; Paul, J.; Löhr, D.-A.; Czernohorsky, M.; Beyer, V.
Conference Paper
2009Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
Seidel, Konrad; Hoffmann, Raik; Löhr, Daniel-Andre; Melde, Thomas; Czernohorsky, Malte; Paul, Jan; Beug, M. Florian; Beyer, Volkhard
Conference Paper
2009Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability
Seidel, K.; Müller, T.; Brandt, T.; Hoffmann, R.; Löhr, D.-A.; Melde, T.; Czernohorsky, M.; Paul, J.; Beyer, V.
Conference Paper
2009Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
Beug, M. Florian; Melde, Thomas; Paul, Jan; Bewersdorff-Sarlette, Ulrike; Czernohorsky, Malte; Beyer, Volkhard; Hoffmann, Raik; Seidel, Konrad; Löhr, Daniel-Andre; Bach, Lars; Knöfler, R.; Tilke, Armin T.
Conference Paper