Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Adaptive camouflage panel in the visible spectral range
Schwarz, Alexander; Bartos, Berndt; Kunzer, Michael; Zechmeister, Martin; Pawlikowski, Jakub
Conference Paper
2018Laser repair of defects in GaN LEDs
Delmdahl, Ralph; Passow, Thorsten; Kunzer, Michael; Binder, Michael
Journal Article
2018Ultraviolet laser ablation as technique for defect repair of GaN‑based light‑emitting diodes
Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim
Journal Article
2017Accelerated LED-degradation under exposure to air pollutants
Kunzer, Michael
Conference Paper
2017Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects
Zibold, Andreas; Dammann, Michael; Schmidt, Ralf; Konstanzer, Helmer; Kunzer, Michael
Journal Article
2016High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
Conference Paper
2016LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.
Conference Paper
2015Vorrichtung zur Mikrostrukturierung von Oberflächen
Kunzer, Michael
Patent
2014Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning
Ambacher, O.; Ostendorf, R.; Bleh, D.; Merten, A.; Grahmann, J.; Schmidt, R.; Kunzer, M.; Hugger, S.; Wagner, J.
Conference Paper
2014GaN-based micro-LED arrays on flexible substrates for optical cochlear implants
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U.T.
Journal Article
2014Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation
Albrecht, B.; Kopta, S.; John, O.; Rütters, Martin; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2014Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs
Wätzig, Katja; Kunzer, Michael; Kinski, Isabel
Journal Article
2014Lichtemittierende Diode und Verfahren zur Herstellung einer lichtemittierenden Diode
Kunzer, Michael; Moser, Rüdiger
Patent
2014Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Journal Article
2014Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2014Verfahren und Vorrichtung zur Herstellung eines Halbleiterbauelements
Moser, Rüdiger; Kunzer, Michael; Goßler, Christian; Schwarz, Ulrich
Patent
2013Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
Journal Article
2013GaN doped with beryllium - An effective light converter for white light emitting diodes
Teisseyre, H.; Bockowski, M.; Grzegory, I.; Kozanecki, A.; Damilano, B.; Zhydachevskii, Y.; Kunzer, M.; Holc, K.; Schwarz, U.T.
Journal Article
2013High power efficiency AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2013Laser direct writing of GaN-based light-emitting diodes - the suitable laser source for mesa definition
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U.T.; Wagner, J.
Journal Article
2013Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes
Kato, H.; Wolfer, M.; Schreyvogel, C.; Kunzer, M.; Müller-Sebert, W.; Obloh, H.; Yamasaki, S.; Nebel, C.E.
Journal Article
2012AlGaN-based 355 nm UV light-emitting diodes with high power efficiency
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012First principle studies on molecular doping of ZnO thin films by As2O3
Sorgenfrei, T.; Bachem, K.-H.; Schneider, J.; Kirste, L.; Kunzer, M.; Fiederle, M.
Journal Article
2012Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Journal Article
2012Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.
Conference Paper
2012Line beam laser lift-off approach for sapphire removal
Delmdahl, R.; Paetzel, R.; Brune, J.; Senczuk, R.; Gossler, C.; Moser, R.; Kunzer, M.; Schwarz, U.
Conference Paper
2012Line beam processing for laser lift-off of GaN from sapphire
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U.T.
Journal Article
2011Aluminum-germanium wafer bonding of (AlGaIn)N thin film light-emitting diodes
Gossler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Koehler, K.; Schwarz, U.T.; Wagner, J.
Abstract
2011Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Conference Paper
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2011Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowires
Wang, C.Y.; Kinzer, M.; Youn, S.K.; Ramgir, N.; Kunzer, M.; Köhler, K.; Zacharias, M.; Cimalla, V.
Journal Article
2011Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching
Moser, R.; Ojha, N.; Kunzer, M.; Schwarz, U.T.
Journal Article
2011Thin film LEDs gaining ground
Delmdahl, R.; Kunzer, M.; Schwarz, U.T.
Journal Article
2010Near-UV LEDs for integrated InO-based ozone sensors
Wang, C.Y.; Cimalla, V.; Kunzer, M.; Passow, T.; Pletschen, W.; Kappeler, O.; Wagner, J.; Ambacher, O.
Journal Article, Conference Paper
2010Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Conference Paper
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2010Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Conference Paper, Journal Article
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates
Maier, M.; Passow, T.; Kunzer, M.; Schirmacher, W.; Pletschen, W.; Kirste, L.; Köhler, K.; Wagner, J.
Conference Paper
2009Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Maier, M.; Köhler, K.; Kunzer, M.; Pletschen, W.; Wagner, J.
Journal Article
2008(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
Wagner, J.; Wang, C.Y.; Röhlig, C.-C.; Maier, M.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Cimalla, V.; Köhler, K.; Ambacher, O.
Conference Paper
2008Band anticrossing in diluted AlxGa1-xAs1-yNy (x <= 0.37,y <= 0.04)
Procz, S.; Fiederle, M.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article
2008Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J.
Conference Paper, Journal Article
2008Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.
Journal Article
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Conference Paper, Journal Article
2008Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2007Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J.
Journal Article
2007Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Wang, C.-Y.; Cimalla, V.; Kups, T.; Röhlig, C.-C.; Stauden, T.; Ambacher, O.; Kunzer, M.; Passow, T.; Schirmacher, W.; Pletschen, W.; Köhler, K.; Wagner, J.
Journal Article
2007Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes
Kunzer, M.; Kaufmann, U.; Köhler, K.; Leancu, C.-C.; Liu, S.; Wagner, J.
Journal Article
2007Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs
Baeumler, M.; Kunzer, M.; Schmidt, R.; Liu, S.; Pletschen, W.; Schlotter, P.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2006Mg doping profile in III-N light emitting diodes in close proximity to the active region
Köhler, K.; Perona, A.; Maier, M.; Wiegert, J.; Kunzer, M.; Wagner, J.
Journal Article
2005Control of the Mg doping profile in III-N light-emitting diodes and its effect on the elecroluminescence efficiency
Köhler, K.; Stephan, T.; Perona, A.; Wiegert, J.; Maier, M.; Kunzer, M.; Wagner, J.
Journal Article
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Journal Article
2004III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J.
Journal Article
2004Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes
Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.
Conference Paper
2003Electroluminescence efficiency of InGaN light emitting diodes: Dependence on AlGaN:Mg electron blocking layer width and Mg doping profile
Stephan, T.; Köhler, K.; Kunzer, M.; Schlotter, P.; Wagner, J.
Journal Article
2002(AlGaIn)N ultraviolet LED chips and their use in tri-phosphor luminescence conversion white LEDs
Wagner, J.; Kaufmann, U.; Köhler, K.; Kunzer, M.; Pletschen, W.; Obloh, H.; Schlotter, P.; Stephan, T.; Walcher, H.; Ellens, A.; Rossner, W.; Kobusch, M.
Conference Paper
2002Importance of nonradiative recombination process in violet UV InGaN light emmitting diodes
Stephan, T.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Obloh, H.; Müller, S.; Köhler, K.; Wagner, J.
Journal Article
2002Single chip white LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2001Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.; Köhler, K.
Journal Article
2001Ultraviolet pumped tricolor phosphor blend white emitting LEDs
Kaufmann, U.; Kunzer, M.; Köhler, K.; Obloh, H.; Pletschen, W.; Schlotter, P.; Schmidt, R.; Wagner, J.; Ellens, A.; Rossner, W.; Kobusch, M.
Journal Article
2000Group III-Nitride heterostructures: From materials research to devices
Wagner, J.; Obloh, H.; Kunzer, M.; Schlotter, P.; Pletschen, W.; Kiefer, R.; Kaufmann, U.; Köhler, K.
Conference Paper
2000Optimization of InGaN/GaN quantum wells for violet GaN/InGaN/AlGaN LEDs
Ramakrishnan, A.; Kunzer, M.; Schlotter, P.; Obloh, H.; Pletschen, W.; Köhler, K.; Wagner, J.
Conference Paper
2000Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Ramakrishnan, A.; Wagner, J.; Kunzer, M.; Obloh, H.; Köhler, K.
Journal Article
2000Resonant Raman scattering from buried Al(x)Ga(1-x)N (x < = 0.17) layers in (Al,Ga,In)N heterostructures
Yoshikawa, M.; Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.
Journal Article
2000Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Köhler, K.; Johs, B.
Conference Paper
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Journal Article
1999Chemically-assisted ion-beam etching of (AlGa)As/GaAs. Lattice damage and removal by in-situ Cl2 treatment
Daleiden, J.; Kiefer, R.; Klußmann, S.; Kunzer, M.; Manz, C.; Walther, M.; Braunstein, J.; Weimann, G.
Journal Article
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs (LUCOLEDs)
Schlotter, P.; Baur, J.; Hielscher, C.; Kunzer, M.; Obloh, H.; Schmidt, R.; Schneider, J.
Journal Article
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1999In(x)Ga(1-x)N/GaN band offsets as inferred from the deep, yellow-red emission band in In(x)Ga(1-x)N
Manz, C.; Kunzer, M.; Obloh, H.; Ramakrishnan, A.; Kaufmann, U.
Journal Article
1999Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B.
Journal Article
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1998Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures
Kunzer, M.; Kaufmann, U.; Maier, M.; Obloh, H.
Conference Paper
1998Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P.
Journal Article
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article
1997Identification of multivalent molybdenum impurities in SiC crystals
Baur, J.; Kunzer, M.; Dombrowski, K.F.; Kaufmann, U.; Schneider, J.; Baranov, P.G.; Mokhov, E.N.
Conference Paper
1997Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.
Journal Article
1997Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1997Transition metals in SiC polytypes, as studied by magnetic resonance techniques
Baur, J.; Kunzer, M.; Schneider, J.
Journal Article
1996Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1996Identification of molybdenum in 6H-SiC by magnetic resonance techniques
Dombrowski, K.F.; Kunzer, M.; Kaufmann, U.; Schneider, J.
Journal Article
1996Identification of optically and electrically active molybdenum trace imputities in 6H-SiC substrates
Kunzer, M.; Dombrowski, K.F.; Fuchs, F.; Kaufmann, U.; Schneider, J.; Baranov, P.G.; Mokhov, E.N.
Conference Paper
1996Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD
Kaufmann, U.; Kunzer, M.; Merz, C.; Akasaki, I.; Amano, H.
Conference Paper
1995Characterization of residual transition metal ions in GaN and AlN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K.
Conference Paper
1995Determination of the GaN/AlN band discontinuities via the '-/0' acceptor level of iron
Baur, J.; Kunzer, M.; Maier, K.; Kaufmann, U.; Schneider, J.
Journal Article
1995Magnetic circular dichroism and electron spin resonance of the A- acceptor state of Vanadium, V3+, in 6H-SiC
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.
Journal Article
1995Optisch detektierte Elektronenspinresonanz an Defekten in aktuellen Verbindungshalbleitern
Kunzer, M.
Dissertation
1995Photoluminescence of residual transition metal impurities in GaN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.
Journal Article
1994Bistability of the Te donor in AlSb:Te bulk crystals
Jost, W.; Kunzer, M.; Kaufmann, U.; Bender, H.
Journal Article
1994Deep donor state of vanadium in cubic silicon carbide -3C-SiC-
Dombrowski, K.F.; Kaufmann, U.; Kunzer, M.; Maier, K.; Schneider, J.; Shields, V.B.; Spencer, M.G.
Journal Article
1994Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.
Journal Article
1994Identification of the neutral V4+ impurity in cubic 3C-SiC by electron-spin resonance and optically detected magnetic resonance
Dombrowski, K.F.; Kaufmann, U.; Kunzer, M.; Maier, K.; Schneider, J.; Shields, V.B.; Spencer, M.G.
Journal Article
1994Infrared luminescence of residual iron deep level acceptors in gallium nitride -GaN- epitaxial layers.
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K.
Journal Article
1994Iron acceptors in gallium nitride -GaN-.
Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Monemar, B.; Akasaki, I.; Amano, H.
Journal Article
1994ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H.
Journal Article
1993Identification of the BiGa heteroantisite defect in GaAs:Bi
Kunzer, M.; Jost, W.; Kaufmann, U.; Hobgood, H.M.; Thomas, R.N.
Journal Article
1993Magnetic circular dichroism and site-selective optically detected magnetic resonance of the deep amphoteric vanadium impurity in 6H-SiC
Kunzer, M.; Müller, H.D.; Kaufmann, U.
Journal Article
1992AsGa antisite defects in LT GaAs as studied by magnetic resonance and magneto-optical techniques.
Jost, W.; Kaufmann, U.; Schneider, J.; Köhler, K.; Alt, H.C.; Kunzer, M.
Journal Article
1992Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M.
Journal Article
1992Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb
Omling, P.; Hofmann, D.M.; Baeumler, M.; Kaufmann, U.; Kunzer, M.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In(0.16)Ga(0.84)As/Al(0.29)Ga(0.71)As quantum wells on a GaAs substrate
Kunzer, M.; Hendorfer, G.; Kaufmann, U.; Köhler, K.
Journal Article
1992Spin-polarized excitons in pseudomorphic, strained In0.16Ga0.84As/Al0.29Ga0.71As quantum wells on GaAs
Kunzer, M.; Hendorfer, G.; Köhler, K.; Rühle, W.W.; Kaufmann, U.
Conference Paper
1991Optisch detektierte magnetische Resonanz von III-V Halbleitern und optisches Pumpen and III-V Halbleiterstrukturen
Kunzer, M.
Thesis