Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)
Lenz, A.; Eisele, H.; Genz, F.; Franke, D.; Kunzel, H.; Pohl, U.W.; Dähne, M.
Conference Paper
2007Telecom components for terahertz applications
Sartorius, B.; Bottcher, J.; Bornholdt, C.; Kunzel, H.; Röhle, H.; Schlak, M.
Conference Paper
2003Improved coherent terahertz emission by modification of the dielectric environment
Zedler, M.; Janke, C.; Bolivar, P.H.; Kurz, H.; Kunzel, H.
Journal Article
2002Ferromagnetism in a quantum hall system due to exchange enhancement in a GaInAs quantum well
Nachtwei, G.; Manolescu, A.; Nestle, N.; Kunzel, H.
Journal Article
2001InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 mu m wavelength range
Maleev, N.A.; Krestnikov, I.L.; Kovsh, A.R.; Sakharov, A.V.; Ustinov, V.M.; Mikhrin, S.S.; Passenberg, W.; Pawlowski, E.; Moller, C.; Tsatsulnikov, A.F.; Kunzel, H.; Ledentsov, N.N.; Alferov, Z.I.; Bimberg, D.
Journal Article
2001Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE
Kunzel, H.; Gibis, R.; Kaiser, R.; Malchow, S.; Schelhase, S.
Conference Paper
2000InAlGaAs bulk micromachined tunable Fabry-Perot filter for dense WDM systems
Pfeiffer, J.; Peerlings, J.; Riemenschneider, R.; Genovese, R.; Aziz, M.; Goutain, E.; Kunzel, H.; Gortz, W.; Böhm, G.; Amann, M.C.; Meissner, P.; Hartnagel, H.L.
Journal Article
2000MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T.
Conference Paper
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Conference Paper, Journal Article
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Conference Paper, Journal Article
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Conference Paper, Journal Article
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Conference Paper, Journal Article
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Journal Article
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Journal Article
1997MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices
Paraskevopoulos, A.; Kunzel, H.; Bottcher, J.; Urmann, G.; Hensel, H.J.; Bozbek, A.
Conference Paper
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1997Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints
Kunzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1996Hydrogen radical processing-in-situ semiconductor surface cleaning for epitaxial regrowth
Kunzel, H.; Hase, A.; Griebenow, U.
Conference Paper
1995In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.
Conference Paper, Journal Article
1995Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.
Conference Paper, Journal Article
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Conference Paper, Journal Article
1994Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W.
Journal Article
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Conference Paper
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Journal Article
1994In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth
Hase, A.; Gibis, A.R.; Kunzel, H.; Griebenow, U.
Journal Article
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Conference Paper
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Journal Article
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Conference Paper, Journal Article
1993MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C.
Conference Paper, Journal Article
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Conference Paper, Journal Article
1993Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs
Stareev, G.; Kunzel, H.
Journal Article
1992High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Kunzel, H.; Grote, N.; Albrecht, P.; Bottcher, J.; Bornholdt, C.
Conference Paper
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Journal Article
1992Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.
Conference Paper, Journal Article
1991Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G.
Conference Paper, Journal Article
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Conference Paper
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Conference Paper, Journal Article
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Journal Article
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Conference Paper, Journal Article
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Conference Paper
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Conference Paper
1989Quality and applications of In(Ga)AlAs-layers
Schramm, C.; Kunzel, H.; Bornholdt, C.; Su, L.M.; Wehmann, H.H.
Conference Paper
1985Molecular beam epitaxy of III-V compounds
Kunzel, H.
Conference Paper